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Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
Publication with shared reference
10.1063/5.0229625
Home
Publications
Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
Publication with shared reference
10.1063/5.0229625
Publications with shared reference:
Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
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