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Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application
Publication with shared reference
10.1116/1.3155401
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Publications
Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application
Publication with shared reference
10.1116/1.3155401
Publications with shared reference:
Dry etching of CoFe films using a CH4∕Ar inductively coupled plasma for magnetic random access memory application
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