Doping allows precise tuning of the electronic properties in 2D materials, optimizing their performance for applications such as complementary metal‐oxide‐semiconductor (CMOS) technology. However, developing reliable p‐type 2D semiconductors remains challenging due to intrinsic defects or unintentional n‐type doping. This study presents robust p‐type monolayer WSe₂ field‐effect transistors (FETs) using phase‐engineered WSe₂/WSe_yO_x building blocks created via an atomic oxidation process (AOP). The findings reveal that when bilayer WSe₂ is exposed to AOP, the top layer undergoes self‐limited oxidation to WSe_yO_x with no detectable oxidation of the bottom layer. This result is confirmed by Raman spectroscopy, X‐ray photoelectron spectroscopy, and Kelvin probe force microscopy. This process has further been used to demonstrate a well‐controlled and fully encapsulated WSe_yO_x/WSe₂/WSe_yO_x heterostructure, ensuring symmetrical protection and stability of the WSe₂ channel region. The surface charge transfer doping using WSe_yO_x provides the capability to selectively modulate the carrier concentration in a WSe₂ without altering the intrinsic properties of the channel. This non‐destructive method simplifies the fabrication of p‐type 2D FETs with monolithic, phase‐engineered heterostructures, facilitating seamless integration into next‐generation device architectures.

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