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  3. Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam
  4. Publication with shared reference
  5. 10.1002/pssb.202500409
  1. Home
  2. Publications
  3. Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam
  4. Publication with shared reference
  5. 10.1002/pssb.202500409

Publications with shared reference:

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam

0 publications found

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