Metal insulator semiconductor structures using high- <mml:math display="inline"><mml:mi>k</mml:mi></mml:math>k materials have been prepared and investigated for the passivation of 4H-SiC surfaces. Alternate layers of AlN and

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Al2O3 were deposited on

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8nm thermally grown

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SiO2 on epitaxial SiC, forming multilayer stacked dielectrics. Atomic layer deposition (ALD) has been used for the deposition. Our results show that the AlN, deposited by ALD, has a columnar polycrystalline structure with boundaries related to the step bunching of SiC epitaxial layer. Capacitance–voltage measurements have been performed at room temperature, 100, 200, and

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300°C . Annealing of the samples was also performed at these temperatures and they were consecutively measured at room temperature. Current–voltage measurements have also been performed before and after annealing. It has been observed that the stack with a bottom layer of

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Al2O3 , forming an interface with the thin

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SiO2 , is more stable at high temperatures; however, its breakdown voltage is less than that of the other stack with AlN forming the bottom layer. The breakdown behavior of the stacks is also found to be different depending on the order of AlN and

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Al2O3 layers.

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