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Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
Publication with shared reference
10.1116/1.2960555
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Publications
Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
Publication with shared reference
10.1116/1.2960555
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Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
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