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Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
Publication with shared reference
10.1063/1.4704926
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Publications
Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
Publication with shared reference
10.1063/1.4704926
Publications with shared reference:
Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
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