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Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
Publication with shared reference
10.1063/1.89373
Home
Publications
Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
Publication with shared reference
10.1063/1.89373
Publications with shared reference:
Growth of GaAs-Ga1−
x
Al
x
As over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
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