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Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement
Publication with shared reference
10.1063/1.335418
Home
Publications
Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement
Publication with shared reference
10.1063/1.335418
Publications with shared reference:
Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement
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