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Publications
Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure
Publication with shared reference
10.1063/1.364225
Home
Publications
Breakdown characteristics in InP/InGaAs avalanche photodiode with p-i-n multiplication layer structure
Publication with shared reference
10.1063/1.364225
Publications with shared reference:
Breakdown characteristics in InP/InGaAs avalanche photodiode with
p-i-n
multiplication layer structure
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