John Smedley

The transmission of the optical components of the Bernina branch of the Aramis beamline at SwissFEL has been measured with an X-ray gas monitor from DESY and compared with a PSI gas detector upstream of the optical components. The transmission efficiencies of the Mo, Si and SiC mirror coatings of the Aramis beamline and the various other in-beam components were evaluated and compared with theoretical calculations, showing an agreement of 6% or better in all cases. The experiment has also shown the efficacy of the high-harmonic rejection mirrors at the Bernina branch of the Aramis beamline at SwissFEL, and characterized the transmission efficiency of the on-line spectrometer in the Aramis beamline. The theoretical transmission of the mirror coatings match the experimental data to within 7%. The accuracy of these measurements was checked against a radiative bolometer from a Japanese collaboration and found to agree to a level of 4% or better. Further comparisons with a diamond detector from a US-based inter-institute collaboration demonstrated a good agreement for the attenuator settings of the beamline.

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K ₂ CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ~40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s ⁻¹ . The final K ₂ CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K ₃ Sb and finally to K ₂ CsSb.

Many modern synchrotron techniques are trending toward use of high flux beams and/or beams which require enhanced stability and precise understanding of beam position and intensity from the front end of the beamline all the way to the sample. For high flux beams, major challenges include heat load management in optics (including the vacuum windows) and a mechanism of real-time volumetric measurement of beam properties such as flux, position, and morphology. For beam stability in these environments, feedback from such measurements directly to control systems for optical elements or to sample positioning stages would be invaluable. To address these challenges, we are developing diamond-based instrumented vacuum windows with integrated volumetric x-ray intensity, beam profile and beam-position monitoring capabilities. A 50 µm thick single crystal diamond has been lithographically patterned to produce 60 µm pixels, creating a >1kilopixel free-standing transmission imaging detector. This device, coupled with a custom, FPGA-based readout, has been used to image both white and monochromatic x-ray beams and capture the last x-ray photons at the National Synchrotron Light Source (NSLS). This technology will form the basis for the instrumented end-station window of the x-ray footprinting beamline (XFP) at NSLS-II.

The real and imaginary parts of the complex refractive index of Si_xN_yH_z have been calculated from first principles. Optical spectra for reflectivity, absorption coefficient, energy-loss function (ELF), and refractive index were obtained. The results for Si₃N₄ are in agreement with the available theoretical and experimental results. To understand the electron energy loss mechanism in Si-rich silicon nitride, the influence of the Si/N ratio, the positions of the access Si atoms, and H in and on the surface of the ELF have been investigated. It has been found that all defects, such as dangling bonds in the bulk and surfaces, increase the intensity of the ELF in the low energy range (below 10 eV). H in the bulk and on the surface has a healing effect, which can reduce the intensity of the loss peaks by saturating the dangling bonds. Electronic structure analysis has confirmed the origin of the changes in the ELF. It has demonstrated that the changes in ELF are not only affected by the composition but also by the microstructures of the materials. The results can be used to tailor the optical properties, in this case the ELF of Si-rich Si₃N₄, which is essential for secondary electron emission applications.

We discuss our investigation of electron trapping in a diamond amplifier (DA). Our previous work demonstrated that some electrons reaching the DA’s hydrogenated surface are not emitted. The state and the removal of these electrons is important for DA applications. We found that these stopped electrons are trapped, and cannot be removed by a strong reversed-polarity electric field; to neutralize this surface charge, holes must be sent to the hydrogenated surface to recombine with the trapped electrons through the Shockley-Read-Hall surface-recombination mechanism. We measured the time taken for such recombination on the hydrogenated surface, viz. the recombination time, as less than 5 ns, limited by the resolution of our test system. With this measurement, we demonstrated that DA could be operated in an rf cavity with frequency of a few hundred megahertz. DOI: http://dx.doi.org/10.1103/PhysRevSTAB.15.013501 Published by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Published by the American Physical Society

A promising new concept of a diamond amplified photocathode for generation of high-current, high-brightness, and low thermal emittance electron beams was recently proposed and is currently under active development. To better understand the different effects involved, we have been developing models, within the VORPAL computational framework, to simulate secondary electron generation and charge transport in diamond. The implemented models include inelastic scattering of electrons and holes for generation of electron-hole pairs, elastic, phonon, and charge impurity scattering. We will discuss these models and present results from 3D VORPAL simulations on charge gain and collection efficiency as a function of primary electron energy and applied electric field. The implemented modeling capabilities already allow us to investigate specific effects and compare simulation results with experimental data.