Cheng-Chih Hsu

Manufacturing and testing of a TMG (thermoelectric microgenerator) with CNCs (carbon nanocapsules) film fabricated utilizing a CMOS (complementary metal oxide semiconductor) technology are investigated. The microgenerator includes a CNCs layer, thermopiles, and thermometers. CNCs, a heat absorbing material, are coated on the microgenerator, so that the TD (temperature difference) of HP (hot part) and CP (cold part) in the thermopiles increases, resulting in an enhancement of the microgenerator OP (output power). Thermometers fabricated in the microgenerator are employed to detect the HP and CP temperature in thermopiles. In order to enhance thermopiles’ TD, the HP in thermopiles was manufactured as suspension structures isolating heat dissipation, and the CP in thermopiles was made on a silicon substrate to increase the heat sink. Experiments showed that the microgenerator OV (output voltage) was 3.3 mV and its output power was 125 pW at TD 3 K. Voltage and power factors of TMG were 0.71 mV/K/mm² and 9.04 pW/K²/mm², respectively.

This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis.

A novel encoder with dual displacement resolution is developed by integrating a multiple-grating-scale holographic displacement sensor and a heterodyne interferometer. With suitable arrangement of the measurement system, two effective grating pitches (0.41 μm and 10.62 μm) can be obtained and the theoretical sensitivities of them are 0.9 °/nm and 0.036 °/nm. Meanwhile, the best resolution of the proposed method can be estimated of 0.3 pm and 7.4 pm, respectively. Furthermore, displacement errors of the proposed method can be better than 0.2% for 1 mm displacement measurement. The experimental results showed that the proposed encoder provided high sensitivity, high resolution, and well against environmental disturbance.

The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

In this study we developed a low cost sensor for measuring the concentration of hydrogen peroxide (H₂O₂) in liquids utilizing a spectrometric method. The sensor was tested using various concentrations of a peroxidase enzyme immobilized on a glass substrate. H₂O₂ can be catalyzed by peroxidase and converted into water and oxygen. The reagent 4-amino-phenazone takes up oxygen together with phenol to form a colored product that has absorption peaks at 510 nm and 450 nm. The transmission intensity is strongly related to the hydrogen peroxide concentration, so can be used for quantitative analysis. The measurement range for hydrogen peroxide is from 5 × 10⁻⁵% to 1 × 10⁻³% (0.5 ppm to 10 ppm) and the results show high linearity. This device can achieve a sensitivity and resolution of 41,400 (photon count/%) and 3.49 × 10⁻⁵% (0.35 ppm), respectively. The response time of the sensor is less than 3 min and the sensor can be reused for 10 applications with similar performance.

This study fabricated a multiple poly-Si nanowires sensor through a top-down method and immobilized glucose oxidase on the multiple nanowires for determining glucose concentration. The proposed sensor is 340 nm in width and uses five physically identical and parallel nanowires. The sensor contained nanowires of various lengths (3, 5, and 10 μm). Experimental results showed that sensor sensitivity is inversely proportional to nanowire length. The sensor with 3 μm in nanowire length exhibited a theoretical resolution of 0.003 mg/dL and the highest sensitivity of 0.03 μA/(mg/dL). Furthermore, the proposed sensor retains this performance when reused for up to 10 applications.

A humidity microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process was presented. The integrated sensor chip consists of a humidity sensor and a readout circuit. The humidity sensor is composed of a sensitive film and interdigitated electrodes. The sensitive film is titanium dioxide prepared by the sol-gel method. The titanium dioxide is coated on the interdigitated electrodes. The humidity sensor requires a post-process to remove the sacrificial layer and to coat the titanium dioxide. The resistance of the sensor changes as the sensitive film absorbs or desorbs vapor. The readout circuit is employed to convert the resistance variation of the sensor into the output voltage. The experimental results show that the integrated humidity sensor has a sensitivity of 4.5 mV/RH% (relative humidity) at room temperature.

In this paper, the poly-Si nanowire sensor was fabricated by top-down technique for sodium chloride concentration measurement. The results showed that the smallest threshold voltage and the best resolution were 1.65 V and 0.41 μM, respectively. Furthermore, the sensor can be reused more than 50 times which maintained acceptable performance and showed good linearity of the calibration within wide range of the concentration. Based on these results, it can be concluded that the proposed sensor has great potential to be used for measuring complicated sample with suitable modification on the surface of nanowires.