Rusli

Integer linear programming (ILP) has been widely applied to solve the optimal phasor measurement unit (PMU) placement (OPP) problem for its computational efficiency. Using ILP, a placement with minimum number of Phasor Measurement Units (PMUs) and maximum measurement redundancy can be obtained while ensuring system observability. Author response: please delete this above sentence. However, the existing ILP-based OPP methods does not guarantee full coverage of solutions to the optimization problem, which may sequentially results in suboptimal supervision of the system. In this paper, a hybrid ILP-based method is proposed to cover all solutions to the OPP problem without any omission. Comparing with the existing exhaustive searching methods, the proposed method is more computationally efficient, which makes finding all solutions in a large system a more feasible problem.

A simple two-step surface treatment process is proposed to boost the efficiency of silicon nanowire/PEDOT:PSS hybrid solar cells. The Si nanowires (SiNWs) are first subjected to a low temperature ozone treatment to form a surface sacrificial oxide, followed by a HF etching process to partially remove the oxide. TEM investigation demonstrates that a clean SiNW surface is achieved after the treatment, in contrast to untreated SiNWs that have Ag nanoparticles left on the surface from the metal-catalyzed etching process that is used to form the SiNWs. The cleaner SiNW surface achieved and the thin layer of residual SiO₂ on the SiNWs have been found to improve the performance of the hybrid solar cells. Overall, the surface recombination of the hybrid SiNW solar cells is greatly suppressed, resulting in a remarkably improved open circuit voltage of 0.58 V. The power conversion efficiency has also increased from about 10% to 12.4%. The two-step surface treatment method is promising in enhancing the photovoltaic performance of the hybrid silicon solar cells, and can also be applied to other silicon nanostructure based solar cells.

The finite element method is used to simulate light absorption in periodic hybrid Si nanohole (SiNH)/PEDOT:PSS arrays. The structural periodicity (P) and hole diameter (D) of the hybrid SiNH structure are varied to maximize light absorption. In terms of the solar cell performance under the AM1.5G spectrum, the highest ultimate efficiency achieved is 30.5%, when the D/P ratio is 0.8 and P is 600 nm. We have successfully fabricated the SiNH structure based on a low cost electroless chemical etching approach using a silver catalyst. The SiNH diameters formed vary from ∼200 to 300 nm, with periodicities from ∼300 to 1000 nm. The SiNH structure reveals a low average reflectance of 4% for incident light in the range 300 to 1100 nm.

An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

We report a hybrid solar cell based on well-aligned crystalline silicon nanorods (SiNRs) and an organic semiconductor, 2,2′,7,7′-Tetrakis-(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene (Spiro-OMeTAD), in a core-sheath heterojunction structure. The device is formed by spin coating Spiro-OMeTAD on SiNRs array fabricated by electroless chemical etching. A silver grid on a conductive poly (3,4-ethylene-dioxythiophene): polystyrenesulfonate layer is used as the top transparent anode. A power conversion efficiency of 10.3% has been obtained for a 1-cm2 cell with 0.35-µm long SiNRs. The high efficiency and simple solution process used suggest that such devices are promising for developing low cost and high efficiency SiNRs/organic solar cells.

P-i-n junctions were fabricated along Si nanowires (SiNWs) via the conventional top-down approach using optical lithography. Each device comprises 500 identical SiNWs connected in parallel, and each SiNW has triangular cross-section with dimensions of ~6 nm (base) by ~8 nm (height). The photodiodes exhibit very good rectifying electrical characteristics with a low reverse bias current of ~0.2 fA per SiNW. The photocurrent spectral response exhibits three peaks between 400 nm to 700 nm, which arise due to local optical field enhancement associated with diffraction by the periodic SiNW array and interference in an air/SiO₂/Si cavity.