E. R. Glaser

United States Naval Research Laboratory

*This is an algorithmically generated author record based on publicly available information.

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United States Naval Research Laboratory

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Office of Naval Research

Research Subjects

Semiconductor Physics

Research Interests

E. R. Glaser has a total of 70 co-authors. Here are the top co-authors by number of shared publications:

T. A. Kennedy
Naval Research Laboratory, Washington, D.C. 20375-5347
9 shared publications
B. R. Bennett
U.S. Naval Research Laboratory, Washington, DC, USA
3 shared publications
W. E. Carlos
Naval Research Laboratory, Washington, D.C. 20375, USA
3 shared publications
B. V. Shanabrook
Naval Research Laboratory, Washington, DC 20375-5347
2 shared publications
B.V Shanabrook
Naval Research Laboratory, Washington, DC, 20375-5347 USA
2 shared publications
C. H. Chern
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024
2 shared publications

Latest Publications

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- 1 January 2006
- Published by Springer Nature in MRS Proceedings
Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC
by William C Mitchel, W. D. Mitchell, H. E. Smith, W. E. Carlos, E. R. Glaser
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- 1 January 2006
- Published by Springer Nature in MRS Proceedings
Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC
by William C Mitchel, W. D. Mitchell, H. E. Smith, W. E. Carlos, E. R. Glaser
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Cited by 10
- 31 January 2005
- Published by AIP Publishing in Applied Physics Letters
Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence
by E. R. Glaser, B. V. Shanabrook, W. E. Carlos
The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line ( Q 0 ) to the free excitonic-related emission ( I 77 ) was tracked as a function of excitation power density for a set of samples with varying residual N concentration ( ∼ 6 × 10 14 – 5.2 × 10 16 cm − 3 ) as determined by secondary ion mass spectroscopy. A linear relationship was empirically found between the Q 0 ∕ I 77 ratio and [N] for [ N ] < 1 × 10 16 cm − 3 . However, a sub-linear behavior was observed for samples with higher N levels attributed to incomplete photo-neutralization of the N shallow donors.
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- 31 January 2005
- Published by AIP Publishing in Applied Physics Letters
Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence
by E. R. Glaser, B. V. Shanabrook, W. E. Carlos
The conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line ( Q 0 ) to the free excitonic-related emission ( I 77 ) was tracked as a function of excitation power density for a set of samples with varying residual N concentration ( ∼ 6 × 10 14 – 5.2 × 10 16 cm − 3 ) as determined by secondary ion mass spectroscopy. A linear relationship was empirically found between the Q 0 ∕ I 77 ratio and [N] for [ N ] < 1 × 10 16 cm − 3 . However, a sub-linear behavior was observed for samples with higher N levels attributed to incomplete photo-neutralization of the N shallow donors.
Cited by 10
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Cited by 2
- 15 December 1999
- Published by Elsevier in Physica B: Condensed Matter
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes
by E.R Glaser, T.A Kennedy, B.R Bennett, B.V Shanabrook, L.A Hemstreet, M.W Bayerl, M.S Brandt
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- 15 December 1999
- Published by Elsevier in Physica B: Condensed Matter
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes
by E.R Glaser, T.A Kennedy, B.R Bennett, B.V Shanabrook, L.A Hemstreet, M.W Bayerl, M.S Brandt
Cited by 2
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Cited by 24
- 1 December 1999
- Published by Elsevier in Physica B: Condensed Matter
Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN
by E.R Glaser, T.A Kennedy, J.A Freitas, B.V Shanabrook, A.E Wickenden, D.D Koleske, R.L Henry, H Obloh
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- 1 December 1999
- Published by Elsevier in Physica B: Condensed Matter
Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN
by E.R Glaser, T.A Kennedy, J.A Freitas, B.V Shanabrook, A.E Wickenden, D.D Koleske, R.L Henry, H Obloh
Cited by 24
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Cited by 14
- 30 June 1999
- Published by SPIE-Intl Soc Optical Eng
Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications
by Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian Robert Bennett, J. Brad Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, et al.
Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics.
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- 30 June 1999
- Published by SPIE-Intl Soc Optical Eng
Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications
by Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian Robert Bennett, J. Brad Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, et al.
Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics.
Cited by 14
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Cited by 13
- 15 January 1999
- Published by American Physical Society (APS) in Physical Review B
Strong emission from As monolayers in AlSb
by E. R. Glaser, T. A. Kennedy, B. R. Bennett, B. V. Shanabrook
Strong photoluminescence (PL) bands between 1.41 and 1.62 eV have been observed from superlattices (SL’s) composed of fractional or single monolayers (ML) of AlAs separated by 22–49 ML of AlSb. The emission exhibits a weak dependence on the SL period but shifts significantly to higher energy with decreasing AlAs thickness. Optically detected magnetic-resonance (ODMR) experiments at 24 GHz on the 1.45-eV PL from the SL’s with ∼1 ML of AlAs reveal $S = \frac{1}{2}$ electron spin transitions with $g_{∥} = (1.916 - 1.923) \pm 0.002$ and $g_{⊥} = (1.934 - 1.944) \pm 0.002$ split by an exchange interaction (Δ) of $(3.4 - 8.0) \pm 0.2 μ eV$ with holes derived from the $J_{z} = \pm \frac{3}{2}$ valence band. Exchange-split electron resonances with $g_{∥} = 1.868 \pm 0.002$ and $g_{⊥} = 1.882 \pm 0.002$ and $Δ = 19.5 \pm 0.5 μ eV$ were detected on the 1.62-eV band from a sample with 31 ML of AlSb and 0.27 ML of AlAs. The PL and ODMR results can be understood using a type-II band lineup with the electron localized at the AlAs ML and the hole excluded to the AlSb layers. The electron g values and the strength of the exchange interaction reflect the degree of wave-function penetration into the adjacent AlSb barriers. The weakly bound excitons are localized at fluctuations along the AlSb/AlAs interfaces.
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- 15 January 1999
- Published by American Physical Society (APS) in Physical Review B
Strong emission from As monolayers in AlSb
by E. R. Glaser, T. A. Kennedy, B. R. Bennett, B. V. Shanabrook
Strong photoluminescence (PL) bands between 1.41 and 1.62 eV have been observed from superlattices (SL’s) composed of fractional or single monolayers (ML) of AlAs separated by 22–49 ML of AlSb. The emission exhibits a weak dependence on the SL period but shifts significantly to higher energy with decreasing AlAs thickness. Optically detected magnetic-resonance (ODMR) experiments at 24 GHz on the 1.45-eV PL from the SL’s with ∼1 ML of AlAs reveal $S = \frac{1}{2}$ electron spin transitions with $g_{∥} = (1.916 - 1.923) \pm 0.002$ and $g_{⊥} = (1.934 - 1.944) \pm 0.002$ split by an exchange interaction (Δ) of $(3.4 - 8.0) \pm 0.2 μ eV$ with holes derived from the $J_{z} = \pm \frac{3}{2}$ valence band. Exchange-split electron resonances with $g_{∥} = 1.868 \pm 0.002$ and $g_{⊥} = 1.882 \pm 0.002$ and $Δ = 19.5 \pm 0.5 μ eV$ were detected on the 1.62-eV band from a sample with 31 ML of AlSb and 0.27 ML of AlAs. The PL and ODMR results can be understood using a type-II band lineup with the electron localized at the AlAs ML and the hole excluded to the AlSb layers. The electron g values and the strength of the exchange interaction reflect the degree of wave-function penetration into the adjacent AlSb barriers. The weakly bound excitons are localized at fluctuations along the AlSb/AlAs interfaces.
Cited by 13
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Cited by 14
- 23 November 1998
- Published by AIP Publishing in Applied Physics Letters
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
by E. R. Glaser, T. A. Kennedy, W. E. Carlos, P. P. Ruden, S. Nakamura
Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons.
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- 23 November 1998
- Published by AIP Publishing in Applied Physics Letters
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
by E. R. Glaser, T. A. Kennedy, W. E. Carlos, P. P. Ruden, S. Nakamura
Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons.
Cited by 14
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Cited by 9
- 1 January 1998
- Published by Elsevier
Chapter 3 Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence
by T.A. Kennedy, E.R. Glaser
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- 1 January 1998
- Published by Elsevier
Chapter 3 Magnetic Resonance of Epitaxial Layers Detected by Photoluminescence
by T.A. Kennedy, E.R. Glaser
Cited by 9
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Cited by 5
- 21 May 1997
- Published by IOP Publishing in Journal of Physics D: Applied Physics
Optical NMR from single GaAs/AlGaAs quantum wells
by S W Brown, T A Kennedy, E R Glaser, D S Katzer
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- 21 May 1997
- Published by IOP Publishing in Journal of Physics D: Applied Physics
Optical NMR from single GaAs/AlGaAs quantum wells
by S W Brown, T A Kennedy, E R Glaser, D S Katzer
Cited by 5
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Cited by 1
- 1 January 1997
- Published by Springer Nature in MRS Proceedings
Location Of Residual Donors In GaN Epitaxial Layers
by E. R. Glaser, T. A. Kennedy, A. E. Wickenden, D. D. Koleske, W. G. Perry, R. F. Davis
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- 1 January 1997
- Published by Springer Nature in MRS Proceedings
Location Of Residual Donors In GaN Epitaxial Layers
by E. R. Glaser, T. A. Kennedy, A. E. Wickenden, D. D. Koleske, W. G. Perry, R. F. Davis
Cited by 1

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