Baojie Yan
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Baojie Yan has a total of 31 co-authors. Here are the top co-authors by number of shared publications:
Ying Zhao
Nankai University
5 shared publicationsXiaodan Zhang
Nankai University
4 shared publications- Jeff Yang
United Solar Ovonic LLC, Troy, Michigan, United States
3 shared publications - Subhendu Guha
United Solar Ovonic LLC, Troy, Michigan, United States
3 shared publications - Guozhen Yue
United Solar Ovonic LLC, Troy, Michigan, United States
2 shared publications Lisha Bai
Nankai University
2 shared publications
Latest Publications
- 15 November 2019
- Published by Springer Nature
- p. 693-756
Hydrogenated Microcrystalline Silicon Thin Films
- 15 November 2019
- Published by Springer Nature
- p. 693-756
Hydrogenated Microcrystalline Silicon Thin Films
- 29 January 2018
- Published by Springer Nature
- p. 1-64
Hydrogenated Microcrystalline Silicon Thin Films
- 23 January 2018
- Published by Springer Nature
- p. 1-54
Hydrogenated Amorphous Silicon Thin Film
- 5 July 2017
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 171, 222-227
Substrate effect on ultra-thin hydrogenated amorphous silicon solar cells
- 5 July 2017
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 171, 222-227
Substrate effect on ultra-thin hydrogenated amorphous silicon solar cells
- 4 February 2013
- Published by American Physical Society (APS) in Physical Review B
- Vol. 87 (8)
Electron transfer in hydrogenated nanocrystalline silicon observed by time-resolved terahertz spectroscopy
We report on the ultrafast carrier dynamics in hydrogenated nanocrystalline silicon (ncSi:H) using time-resolved terahertz spectroscopy. Photoexcitation at 407 nm primarily produces charge carriers in the Si phase, but they undergo a rapid electron transfer to the Si phase prior to complete thermalization into the band-tail states of Si. We studied the carrier dynamics on a range of ncSi:H samples with varying crystalline volume fractions () and mapped out the carrier dynamics with sub-ps resolution. Our measurements are consistent with a model in which electrons are first trapped at interface states at the Si–Si boundary prior to being thermally emitted into the Si phase. Wavelength and temperature dependent measurements are consistent with our model. The phenomena observed here have implications toward solar cell structures that utilize an amorphous material as an absorber layer, previously thought to have a mobility value too low to attain effective charge transport in a device. DOI: http://dx.doi.org/10.1103/PhysRevB.87.081301 ©2013 American Physical Society- 4 February 2013
- Published by American Physical Society (APS) in Physical Review B
- Vol. 87 (8)
Electron transfer in hydrogenated nanocrystalline silicon observed by time-resolved terahertz spectroscopy
We report on the ultrafast carrier dynamics in hydrogenated nanocrystalline silicon (ncSi:H) using time-resolved terahertz spectroscopy. Photoexcitation at 407 nm primarily produces charge carriers in the Si phase, but they undergo a rapid electron transfer to the Si phase prior to complete thermalization into the band-tail states of Si. We studied the carrier dynamics on a range of ncSi:H samples with varying crystalline volume fractions () and mapped out the carrier dynamics with sub-ps resolution. Our measurements are consistent with a model in which electrons are first trapped at interface states at the Si–Si boundary prior to being thermally emitted into the Si phase. Wavelength and temperature dependent measurements are consistent with our model. The phenomena observed here have implications toward solar cell structures that utilize an amorphous material as an absorber layer, previously thought to have a mobility value too low to attain effective charge transport in a device. DOI: http://dx.doi.org/10.1103/PhysRevB.87.081301 ©2013 American Physical Society- 1 May 2008
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 354 (19) , 2460-2463
Properties of light-induced degradation and the electronic properties of nanocrystalline silicon solar cells grown under functionally graded hydrogen dilutions
- 1 May 2008
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 354 (19) , 2460-2463
Properties of light-induced degradation and the electronic properties of nanocrystalline silicon solar cells grown under functionally graded hydrogen dilutions
- 10 August 2005
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1359-1364
Comparison of hydrogenated amorphous silicon germanium and nanocrystalline silicon for multijunction solar cells: pros, cons, and status
A comparison is made of hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) for use in the bottom cell of a multijunction structure. In our laboratory, an initial active-area cell efficiency of 14.6% has been achieved in both a-Si:H/a-SiGe:H/a-SiGe:H and a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. Their light-soaked stabilized efficiencies are also similar. Pros, cons, issues, and status for using these two low bandgap absorber materials in multijunction structures are presented.
- 10 August 2005
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1359-1364
Comparison of hydrogenated amorphous silicon germanium and nanocrystalline silicon for multijunction solar cells: pros, cons, and status
A comparison is made of hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) for use in the bottom cell of a multijunction structure. In our laboratory, an initial active-area cell efficiency of 14.6% has been achieved in both a-Si:H/a-SiGe:H/a-SiGe:H and a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. Their light-soaked stabilized efficiencies are also similar. Pros, cons, issues, and status for using these two low bandgap absorber materials in multijunction structures are presented.
- 1 January 2004
- Published by Springer Nature in MRS Proceedings
- Vol. 808
Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon near the Amorphous Silicon Phase Boundary
- 1 January 2004
- Published by Springer Nature in MRS Proceedings
- Vol. 808
Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon near the Amorphous Silicon Phase Boundary
- 28 July 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (4) , 782-784
Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells
The open-circuit voltage (V oc ) of hydrogenated amorphous siliconsolar cells has been studied experimentally and by computer simulation. We find that band gap and defect states affect V oc significantly. Hydrogen ( H 2 ) dilution widens the band gap and reduces density of defect states; both contribute to larger V oc and better fill factor in H 2 diluted solar cells.Valence band tail narrowing could affect V oc , but is not included in this study due to lack of available data.
- 28 July 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (4) , 782-784
Effect of hydrogen dilution on the open-circuit voltage of hydrogenated amorphous silicon solar cells
The open-circuit voltage (V oc ) of hydrogenated amorphous siliconsolar cells has been studied experimentally and by computer simulation. We find that band gap and defect states affect V oc significantly. Hydrogen ( H 2 ) dilution widens the band gap and reduces density of defect states; both contribute to larger V oc and better fill factor in H 2 diluted solar cells.Valence band tail narrowing could affect V oc , but is not included in this study due to lack of available data.