Chen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Chen has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
H. Tezuka
R & D Division, Furukawa Co., Ltd., 25-13, Kannondai 1-chome, Tsukuba-shi, Ibaraki 305-0856, Japan
1 shared publication- Koichi Kakimoto
Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
1 shared publication L. J. Liu
Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
1 shared publicationY. Usuki
R & D Division, Furukawa Co., Ltd., 25-13, Kannondai 1-chome, Tsukuba-shi, Ibaraki 305-0856, Japan
1 shared publication
Latest Publications
- 6 September 2007
- Published by Wiley in Crystal Research and Technology
- Vol. 42 (10) , 971-975
Numerical investigation of induction heating and heat transfer in a SiC growth system
A global simulation model is applied for a silicon carbide growth system heated by induction coils. A finite‐volume method (FVM) and a global model are applied to solve the equations for electromagnetic field, conductive and radiative heat transfer. The growth rate is predicted by Hertz‐Knudsen equation and one‐dimensional mass transfer equation. Further, simulations for five different coil positions are carried out to investigate the effects of coil position on temperature distribution in the furnace. The numerical results reveal that the variation of temperature in the radial direction along the substrate surface and the temperature difference between the powder and substrate are greatly affected by the coil position. The predicted growth rate along the substrate surface for five coil positions is also studied. Finally, a reasonable range of coil positions maintaining a balance between large‐diameter crystal, high growth rate, temperature limitation of material and lower electrical power consumption is obtained.
- 6 September 2007
- Published by Wiley in Crystal Research and Technology
- Vol. 42 (10) , 971-975
Numerical investigation of induction heating and heat transfer in a SiC growth system
A global simulation model is applied for a silicon carbide growth system heated by induction coils. A finite‐volume method (FVM) and a global model are applied to solve the equations for electromagnetic field, conductive and radiative heat transfer. The growth rate is predicted by Hertz‐Knudsen equation and one‐dimensional mass transfer equation. Further, simulations for five different coil positions are carried out to investigate the effects of coil position on temperature distribution in the furnace. The numerical results reveal that the variation of temperature in the radial direction along the substrate surface and the temperature difference between the powder and substrate are greatly affected by the coil position. The predicted growth rate along the substrate surface for five coil positions is also studied. Finally, a reasonable range of coil positions maintaining a balance between large‐diameter crystal, high growth rate, temperature limitation of material and lower electrical power consumption is obtained.