Russell D. Dupuis

Al_0.6Ga_0.4N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10⁻⁹ A cm⁻². This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10⁵ (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W⁻¹ at a wavelength of 250 nm.

This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.

This work reports high-performance homojunction gallium nitride (GaN) p-i-n (PIN) avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ~1.8° shallow-bevel-mesa edge termination. High-quality p-i-n GaN epitaxial layers were grown using metalorganic chemical vapor deposition (MOCVD), and the device edge termination was achieved by multistep pseudo gray-scale lithography followed by photoresist reflow and dry etching of the bevel mesa. Fabricated GaN APDs showed an ultralow dark current density $\lt 10^{-{9}}$ A/cm2 in the low-mid reverse bias voltage region prior to avalanche breakdown and achieved a current-limited photocurrent gain of $\gt 10^{{7}}$ under deep-ultraviolet (DUV) illumination at $\lambda =280$ nm and a reverse bias −107 V. The total current density without illumination was in the order of $10^{-{5}}$ A/cm2 at the onset of avalanche breakdown. The avalanche breakdown characteristic was confirmed by temperature-dependent J–V studies, with a derived positive temperature coefficient of 0.02 V/K for the breakdown voltage (BV). The analysis of the temperature-dependent reverse-bias characteristics indicated that the reverse leakage current components before avalanche could be attributed to trap-assisted tunneling (TAT) and phonon-assisted tunneling (PAT) processes.

Metalorganic chemical vapor deposition (MOCVD) epitaxial materials technology for the growth of compound semiconductors has been developed over the past 60-plus years to become the dominant process for both research and production of light-emitting devices as well as many other electronic and optoelectronic devices. Today, MOCVD has become the “Swiss Army Knife” of semiconductor epitaxial growth, covering a wide variety of compound semiconductors and device applications. Because of the flexibility and control offered by this process and the material quality produced by MOCVD, many important III–V semiconductor devices have become commercially viable. This paper attempts to provide a personal view of the early development of MOCVD and some brief historical discussion of this important and highly versatile materials technology for the growth of high-quality devices employing ultrathin layers and heterojunctions of III–V compound semiconductors, e.g., quantum-well lasers, light-emitting diodes, heterojunction solar cells, transistors, and photonic integrated circuits.

The non-planar growth of UV-A laser diode heterostructures composed of AlGaN layers with high Al-mole-fractions and thicknesses exceeding the critical layer thickness was performed on patterned c-plane GaN (0001) substrates with stripe-shaped mesa structures. This approach suppressed the surface cracking at the top of the mesas via an anisotropic relaxation of the in-plane strain along the direction normal to the mesa stripes. Stimulated emission and laser operation at room temperature with emission in the UV-A range under pulsed current injection were demonstrated for laser diodes fabricated on the mesas.

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

A top-illuminated deep-ultraviolet Al_0.6Ga_0.4N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately −140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al_0.6Ga_0.4N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of −8 A/cm² (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10⁴ is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

Wide-bandgap III-nitride heterostructures are required for a variety of device applications. However, this alloy system has a large lattice constant and thermal expansion coefficient mismatch that limits the alloy composition and layer thickness for many heteroepitaxial device structures. Consequently, various methods have been devised to allow the heteroepitaxial growth of AlInGaN heterostructures to accommodate this inherent strain. In this work, we describe a non-planar-growth approach that enables the deposition of crack-free high-Al-mole-fraction Al_xGa_1−xN on patterned GaN/sapphire templates and bulk GaN substrates with large-area mesas. We have studied the effects of the patterned mesa width, the mesa etch depth, and the gap between the mesas on the heteroepitaxy of Al_xGa_1−xN superlattices with an average Al molar fraction 0.11 < x¯ < 0.21 and non-planar overgrowth growth thicknesses up to 3.5 μm. Similar to the planar growth approach, increasing the thickness and Al mole fraction of the Al_xGa_1−xN superlattices leads to surface cracking when exceeding the critical layer thickness. However, limiting the mesa dimension in one direction enables strain mitigation and drastically increases the critical layer thickness. Additionally, larger etch depths of the mesas increase the Al alloy composition and thickness for crack-free AlGaN heteroepitaxy whereas the gap in between the mesas seems to have no crucial influence. We demonstrate that the Al alloy composition and layer thicknesses of such heterostructures can be increased far beyond the critical layer thickness for planar growth and demonstrate the growth of a crack-free full Al_xGa_1−xN/GaN quantum-well laser heterostructure designed for operation at ∼370 nm.