Uong Chon
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Uong Chon has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
Gyu-Chul Yi
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
2 shared publications- Hyun Myung Jang
Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
2 shared publications Hyun M. Jang
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
1 shared publicationSun-Hwa Lee
Department of Materials Science and Engineering, and National Research Laboratory (NRL) for Ferroelectric Phase Transitions, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Republic of Korea
1 shared publication
Latest Publications
- Open Access
- 10 March 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (10) , 1577-1579
Recovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi4−xLaxTi3O12/Pt capacitor
The recovery of ferroelectric properties in the forming-gas-annealed (Pt/BLT/Pt) capacitor was studied by examining changes in ferroelectric responses, phase evolution, and spatial distributions of relevant species during the recovery annealing. The degraded ferroelectric properties were practically restored to their original values after the recovery annealing at 600 °C for 10 min in an atmosphere. The following recovery process has been delineated from the present study: (i) the removal of impregnated protons from the degraded capacitor due to the chemical potential difference of protons between the forming-gas-annealed capacitor and the contacting atmosphere, and (ii) the restoration of perovskite BLT phase with the help of replenishment of the Bi and oxygen losses via diffusion from the neighboring intact region to the Bi-depleted columnar region located beneath the top Pt electrode.- 10 March 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (10) , 1577-1579
Open AccessRecovery process of degraded ferroelectric properties in the forming-gas-annealed Pt/Bi4−xLaxTi3O12/Pt capacitor
The recovery of ferroelectric properties in the forming-gas-annealed (Pt/BLT/Pt) capacitor was studied by examining changes in ferroelectric responses, phase evolution, and spatial distributions of relevant species during the recovery annealing. The degraded ferroelectric properties were practically restored to their original values after the recovery annealing at 600 °C for 10 min in an atmosphere. The following recovery process has been delineated from the present study: (i) the removal of impregnated protons from the degraded capacitor due to the chemical potential difference of protons between the forming-gas-annealed capacitor and the contacting atmosphere, and (ii) the restoration of perovskite BLT phase with the help of replenishment of the Bi and oxygen losses via diffusion from the neighboring intact region to the Bi-depleted columnar region located beneath the top Pt electrode. - 1 November 2001
- Published by Springer Nature in Journal of Materials Research
- Vol. 16 (11) , 3124-3132
Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.
- 1 November 2001
- Published by Springer Nature in Journal of Materials Research
- Vol. 16 (11) , 3124-3132
Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates
Highly c-axis-oriented Bi3.25La0.75Ti3O12 (BLT) films with a homogeneous in-plane orientation were successfully grown on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates by a sol-coating route. The substitution of lanthanum ions for bismuth ions in the layered perovskite suppressed the formation of pyrochlore phase and enhanced the c-axis-oriented growth. The c-axis-oriented BLT film fabricated on a Pt/Ti/SiO2/Si(100) substrate showed fatigue-free characteristics with a large remanent polarization of 26–28 μC/cm2 and the coercive field of 50–75 kV/cm. These features significantly enhance the potential value of the BLT film for the applications to high-density ferroelectric random-access memories devices. In addition, the c-axis-oriented BLT film, with a homogeneous in-plane orientation on an amorphous surface, can be used as a suitable template material for applications to various electro-magneto-optic devices.
- 29 January 2001
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (5) , 658-660
Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
Fatigue-free and highly c-axis oriented Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were grown on Pt/Ti/SiO 2 /Si(100) substrates using metalorganic solution decomposition. Filmsannealed above 500 °C were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT filmcapacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P r ) and the coercive field (E c ) were in the range of 26–28 μC/cm2and 50–75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5×10 10 read/write switching cycles at a frequency of 1 MHz.
- 29 January 2001
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (5) , 658-660
Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition
Fatigue-free and highly c-axis oriented Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were grown on Pt/Ti/SiO 2 /Si(100) substrates using metalorganic solution decomposition. Filmsannealed above 500 °C were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT filmcapacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P r ) and the coercive field (E c ) were in the range of 26–28 μC/cm2and 50–75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5×10 10 read/write switching cycles at a frequency of 1 MHz.