D. Lincot
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
D. Lincot has a total of 47 co-authors. Here are the top co-authors by number of shared publications:
- Jean-François Guillemoles
Institut Photovoltaique d’Ile de France, UMR-IPVF 9006, CNRS, Ecole Polytechnique IPP, ENSCP PSL 1 , Palaiseau
6 shared publications A. Etcheberry
Institut Photovoltaïque d’Ile de France, IPVF
4 shared publications- N. Naghavi
Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP-UMR 7174 EDF-CNRS-ENSCP), 6 quai Watier, 78401 Chatou Cedex, France
4 shared publications J. Vedel
Laboratoire d'Electrochimie et de Chimie Analytique (associé au CNRS)
3 shared publicationsR. Cortes
Laboratoire de Physique des Liquides et Electrochimie (UPR CNRS 15), Université Pierre et Marie Curie, 4 place Jussieu, F‐75232 Paris Cedex 05 (France)
3 shared publicationsB. Canava
2 shared publications
Latest Publications
- 26 September 2017
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 47 (12) , 1283-1291
Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications
- 26 September 2017
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 47 (12) , 1283-1291
Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications
- 21 August 2013
- Published by Springer Nature in MRS Proceedings
- Vol. 1538, 145-149
Impact of the deposition conditions of window layers on lowering the metastability effects in Cu(In,Ga)Se2/CBD ZnS-based solar cell
- 21 August 2013
- Published by Springer Nature in MRS Proceedings
- Vol. 1538, 145-149
Impact of the deposition conditions of window layers on lowering the metastability effects in Cu(In,Ga)Se2/CBD ZnS-based solar cell
- 1 May 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15) , 6233-6237
Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements
- 1 May 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15) , 6233-6237
Comparison of optical and electrical gap of electrodeposited CuIn(S,Se)2 determined by spectral photo response and I–V–T measurements
- 1 May 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15) , 6032-6035
Thermodynamic and experimental study of chemical bath deposition of Zn(S,O,OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S,Se)2 absorbers
- 1 May 2007
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15) , 6032-6035
Thermodynamic and experimental study of chemical bath deposition of Zn(S,O,OH) buffer layers in basic aqueous ammonia solutions. Cell results with electrodeposited CuIn(S,Se)2 absorbers
- 31 August 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (8) , 2551-2554
Increasing solar cell efficiencies based on Cu(In,Ga)Se 2 after a specific chemical and oxidant treatment
- 31 August 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (8) , 2551-2554
Increasing solar cell efficiencies based on Cu(In,Ga)Se 2 after a specific chemical and oxidant treatment
- 1 January 2005
- Published by Springer Nature in MRS Proceedings
- Vol. 865
Formation and characterization of the CuIn(S,Se)2/buffer layer interface in electrodeposited solar cells
- 1 January 2005
- Published by Springer Nature in MRS Proceedings
- Vol. 865
Formation and characterization of the CuIn(S,Se)2/buffer layer interface in electrodeposited solar cells
- Top Cited Papers
- 10 October 2003
- Published by Wiley in Progress in Photovoltaics: Research and Applications
- Vol. 11 (7) , 437-443
High‐efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)
This paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature between 160° and 260°C and thickness (15–30 nm) shows an optimal value at about 220°C for a layer thickness of 30 nm, leading to an efficiency of 16·4%. Analysis of the device shows that indium sulfide layers are characterised by an improvement of the blue response of the cells compared with a standard CdS‐processed cell, due to a high apparent band gap (2·7–2·8 eV), higher open‐circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality. Atomic diffusion processes of sodium and copper in the buffer layer are demonstrated. Copyright © 2003 John Wiley & Sons, Ltd.
- 10 October 2003
- Published by Wiley in Progress in Photovoltaics: Research and Applications
- Vol. 11 (7) , 437-443
Top Cited PapersHigh‐efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)
This paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature between 160° and 260°C and thickness (15–30 nm) shows an optimal value at about 220°C for a layer thickness of 30 nm, leading to an efficiency of 16·4%. Analysis of the device shows that indium sulfide layers are characterised by an improvement of the blue response of the cells compared with a standard CdS‐processed cell, due to a high apparent band gap (2·7–2·8 eV), higher open‐circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality. Atomic diffusion processes of sodium and copper in the buffer layer are demonstrated. Copyright © 2003 John Wiley & Sons, Ltd.
- 16 September 2002
- Published by Wiley in Advanced Materials
- Vol. 14 (18) , 1286-1290
Electrodeposition of Epitaxial ZnSe Films on InP and GaAs from an Aqueous Zinc Sulfate–Selenosulfate Solution
- 16 September 2002
- Published by Wiley in Advanced Materials
- Vol. 14 (18) , 1286-1290
Electrodeposition of Epitaxial ZnSe Films on InP and GaAs from an Aqueous Zinc Sulfate–Selenosulfate Solution
- 1 January 2001
- Published by Springer Nature in MRS Proceedings
- Vol. 668
Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells
- 1 January 2001
- Published by Springer Nature in MRS Proceedings
- Vol. 668
Atomic Layer Deposition of Indium Sulfide Layers for Copper Indium Gallium Diselenide Solar Cells
- 1 February 1999
- Published by EDP Sciences in Journal de Chimie Physique et de Physico-Chimie Biologique
- Vol. 96 (2) , 259-271
Étude de la cinétique de croissance des couches minces de sulfure d'argent préparées par dépôt chimique en solution
Journal de Chimie Physique et de Physico-Chimie Biologique
- 1 February 1999
- Published by EDP Sciences in Journal de Chimie Physique et de Physico-Chimie Biologique
- Vol. 96 (2) , 259-271
Étude de la cinétique de croissance des couches minces de sulfure d'argent préparées par dépôt chimique en solution
Journal de Chimie Physique et de Physico-Chimie Biologique