K. Ozdogan

We extend our recent work on spin-filter materials (Galanakis et al 2013 Appl. Phys. Lett.103 142404) to the case of CrVXAl (X = Ti, Zr, Hf) compounds, for which, using ab initio electronic structure calculations, we show that p-d hybridization leads to the formation of a fully compensated ferrimagnetic semiconducting state with moderate exchange splitting. The magnetism is of covalent-type and the very strong antiferromagnetic Cr-V exchange interactions lead to extremely high Curie temperature, TC, values. Furthermore, all three compounds are thermodynamically and magnetically stable. The combination of very high TC values with a zero total net magnetization makes them promising materials for spintronics applications.

DOI: https://doi.org/10.1103/PhysRevB.80.029901

We study the electronic and magnetic properties of the quaternary AuMnSn$_{1-x}$Sb$_{x}$ Heusler alloys using first principles calculations. We determine their magnetic phase diagram and we show that they present a phase transition from a ferromagnetic to an antiferromagnetic state with increasing Sb concentration. For large Sb concentrations the antiferromagnetic superexchange coupling dominates over the ferromagnetic RKKY-like exchange mechanism. This behavior is similar to the one demonstrated by the isovalent Ni$_{1-x}$Cu$_x$MnSb alloy studied recently by the authors [I. Galanakis et al, Phys. Rev. B. \textbf{77}, 214417 (2008)]. Thus the variation of the concentration of the \textit{sp}-electrons (Sn and Sb atoms) and the variation of the concentration of the non-magnetic \textit{3d} atoms (Cu) lead to a similar tuning of the the magnetic properties of the Heusler alloys. We show that the inclusion of correlation effects does not alter the phase diagram. Calculated results are in good agreement with the available experimental data.

Using state-of-the-art first-principles calculations, we study the properties of the ferromagnetic Heusler compounds NiYSi, where Y stands for V, Cr, or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment, and thus we concentrate on these two alloys. The minority-spin gap has the same characteristics as for the well-known NiMnSb alloy being around ∼1 eV. Upon tetragonalization, the gap is present in the density of states even for expansion or contraction of the out-of-plane lattice parameter by 5%. The Cr–Cr and Mn–Mn interactions make ferromagnetism extremely stable and the Curie temperature exceeds 1000 K for NiMnSi. Surface and interfaces with GaP, ZnS, and Si semiconductors are not half-metallic but, in the case of NiCrSi, the Ni-based contacts present spin polarization at the Fermi level around 90%. Finally, we show that there are two cases of defects and atomic-swaps. The first ones, which involve the Cr(Mn) and Si atoms, induce states at the edges of the gap, which persists for a moderate concentration of defects. Defects involving Ni atoms induce states localized within the gap completely destroying the half-metallicity. Based on single-impurity calculations, we associate these states to the symmetry of the crystal.

Using state-of-the-art first-principles calculations we study the properties of the ferromagnetic Heusler compounds NiYSi where Y stands for V, Cr or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment and thus we concentrate on these two alloys. The minority-spin gap has the same characteristics as for the well-known NiMnSb alloy being around $\sim$1 eV. Upon tetragonalization the gap is present in the density of states even for expansion or contraction of the out-of-plane lattice parameter by 5%. The Cr-Cr and Mn-Mn interactions make ferromagnetism extremely stable and the Curie temperature exceeds 1000 K for NiMnSi. Surface and interfaces with GaP, ZnS and Si semiconductors are not half-metallic but in the case of NiCrSi the Ni-based contacts present spin-polarization at the Fermi level over 90%. Finally, we show that there are two cases of defects and atomic-swaps. The first-ones which involve the Cr(Mn) and Si atoms induce states at the edges of the gap which persists for a moderate-concentration of defects. Defects involving Ni atoms induce states localized within the gap completely destroying the half-metallicity. Based on single-impurity calculations we associate these states to the symmetry of the crystal.

We study the effect of the non-magnetic 3\textit{d} atoms on the magnetic properties of the half-metallic (HM) semi-Heusler alloys Co$_{1-x}$Cu$_{x}$MnSb and Ni$_{1-x}$Cu$_{x}$MnSb ($0 \leq x \leq 1$) using first-principles calculations. We determine the magnetic phase diagram of both systems at zero temperature and obtain a phase transition from a ferromagnetic to an antiferromagnetic state. For low Cu concentrations the ferromagnetic RKKY-like exchange mechanism is dominating, while the antiferromagnetic superexchange coupling becomes important for larger Cu content leading to the observed magnetic phase transition. A strong dependence of the magnetism in both systems on the position of the Fermi level within the HM gap is obtained. Obtained results are in good agreement with the available experimental data.

Half-metallic ferromagnets and especially the full-Heusler alloys containing Co are at the center of scientific research due to their potential applications in spintronics. For realistic devices it is important to control accurately the creation of defects in these alloys. We review some of our late results on the role of defects and impurities in these compounds. More precisely we present results for the following cases (i) doping and disorder in Co$_2$Cr(Mn)Al(Si) alloys, (ii) half-metallic ferrimagnetism appeared due to the creation of Cr(Mn) antisites in these alloys, (iii) Co-doping in Mn$_2$VAl(Si) alloys leading to half-metallic antiferromagnetism, and finally (iv) the occurrence of vacancies in the full-Heusler alloys containing Co and Mn. These results are susceptible of encouraging further theoretical and experimental research in the properties of these compounds.