NSNathan A. Stutzke

Nathan A. Stutzke

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Nathan A. Stutzke has a total of 3 co-authors. Here are the top co-authors by number of shared publications:

  • David P. Pappas

    Electromagnetics-Magnetics Group , National Institute of Standards and Technology, 325 Broadway-MC 818.03 Boulder, Colorado 80305

    1 shared publication
  • Mark Tondra

    Nonvolatile Electronics (NVE) Corporation , 11409 Valley View Road, Eden Prairie, Minnesota 55344-3617

    1 shared publication
  • Stephen E. Russek

    Electromagnetics-Magnetics Group , National Institute of Standards and Technology, 325 Broadway-MC 818.03 Boulder, Colorado 80305

    1 shared publication

Latest Publications

  • Low-frequency noise measurements on commercial magnetoresistive magnetic field sensors

    by Nathan A. Stutzke, Stephen E. Russek, David P. Pappas, Mark Tondra

    Low-frequency noise was measured in the frequency range from 0.1Hzto10kHz on a variety of commercially available magnetic sensors. The types of sensors investigated include anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR) effect devices. The 1∕f noise components of electronic and magnetic origin are identified by measuring sensor noise and sensitivity at various applied magnetic fields. Commercial magnetometers typically consist of four elements in a Wheatstone bridge configuration and are biased with either a constant voltage or current. Voltage fluctuations at the sensor output are amplified by a pair of battery powered low-noise preamplifiers and input to a spectrum analyzer. A two-channel cross-correlation technique is used when the performance of a single preamplifier is not sufficient. For the AMR and GMR sensors investigated, both electronic and magnetic components contribute to the overall sensor noise. Maximum noise occurs at the bias field which gives maximum sensitivity. The noise of TMR based sensors is primarily due to resistance fluctuations in the tunnel barrier, having little to no field dependence. The best low-field detectivity of the sensors that have been measured is on the order of 100pT∕Hz0.5 at 1Hz.