Maria Ionica

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (7 to 2.49 × 10¹⁰ p/(cm² s).

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.

Physics research is constantly pursuing more efficient silicon detectors, often trying to develop complex and optimized geometries, thus leading to non-trivial engineering challenges. Although critical for this optimization, there are few silicon tile mechanical data available in the literature. In an attempt to partially fill this gap, the present work details various mechanical-related aspects of spaceborne silicon detectors. Specifically, this study concerns three experimental campaigns with different objectives: a mechanical characterization of the material constituting the detector (in terms of density, elastic, and failure properties), an analysis of the adhesive effect on the loads, and a wirebond vibrational endurance campaign performed on three different unpotted samples. By collecting and discussing the experimental results, this work aims to fulfill its purpose of providing insight into the mechanical problems associated with this specific application and procuring input data of paramount importance. For the study to be complete, the perspective taken is broader than mere silicon analysis and embraces all related aspects; i.e., the detector–structure adhesive interface and the structural integrity of wirebonds. In summary, this paper presents experimental data on the material properties of silicon detectors, the impact of the adhesive on the gluing stiffness, and unpotted wirebond vibrational endurance. At the same time, the discussion of the results furnishes an all-encompassing view of the design-associated criticalities in experiments where silicon detectors are employed.

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies.

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH₄ (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated.

A large-area, solid-state detector with single-hit precision timing measurement will enable several breakthrough experimental advances for the direct measurement of particles in space. Silicon microstrip detectors are the most promising candidate technology to instrument the large areas of the next-generation astroparticle space borne detectors that could meet the limitations on power consumption required by operations in space. We overview the novel experimental opportunities that could be enabled by the introduction of the timing measurement, concurrent with the accurate spatial and charge measurement, in Silicon microstrip tracking detectors, and we discuss the technological solutions and their readiness to enable the operations of large-area Silicon microstrip timing detectors in space.