Kazuto Yamauchi

Lead zirconate titanate (PZT) bimorph mirrors are essential for performing multiple functions, such as beam shaping, wavefront correction, and dynamic focusing with adjustable beam sizes. They typically consist of a mirror substrate with PZT electrodes bonded to the substrate using a thin epoxy film. However, glue-bonded PZT mirrors exhibit low reproducibility in measurement results. One source of this variability is water absorption by the substrate’s epoxy adhesive during wet fabrication processes, such as elastic emission machining (EEM), which leads to swelling and deformation. Additionally, longer deformable bimorph mirrors require larger PZT electrodes, further complicating their design and fabrication, particularly during bonding and ultraprecise metrology. To address these challenges, silver nanoparticles were employed to bond PZT elements to the silicon (Si) mirror, eliminating the need for epoxy glue. In this study, we developed an inorganic-glue-free PZT bimorph mirror with a length of 460 mm and 28 channels. The glue-free bonding method successfully ensured the high reproducibility of measurements after water immersion. This approach resulted in a shape error of only 0.41 nm root mean square after the figure correction process using an ultraprecise EEM process. Scanning acoustic tomography and basic response function tests confirmed the success of the bonding process, showing no critical voids. Furthermore, the shape changes induced by applying voltages to the PZT electrodes closely matched predictions obtained from simulations. These results demonstrate the reliability and precision of the proposed glue-free bonding technique, paving the way for improved performance of new PZT bimorph mirrors.

Since SiC is hard and brittle, dicing by normal grinding process not only requires a long time for processing, but also reduces chip strength due to microcracks. The use of highly efficient and damage-free etching with high-pressure plasma as a chemical processing method for dicing rather than mechanical processing was investigated. The results of groove processing using a combination of a metal mask with slit-like apertures and plasma etching with high-pressure SF₆ plasma showed that the processing speed decreased with decreasing slit width and increasing groove depth. The results of electrostatic field calculations suggest that this is due to a decrease in plasma intensity caused by electric field decreasing.

Previously, we developed an abrasive-free polishing technique called catalyst-referred etching (CARE) for inorganic materials. In this method, the topmost site of the workpiece surface is preferentially removed via an indirect hydrolysis reaction promoted by a metal catalyst. In this study, we proposed applying the CARE method to polymer material polishing and demonstrated the polishing characteristics. Using the CARE method, polycarbonate, which has an easy cleavage of ester bond via hydrolysis, was polished, resulting in the smoothness of the surface roughness below 1.0 nm. Based on the surface observations, the removal mechanism was estimated as follows. Molecule chains are entangled to form clusters constituting the polymer surface and help determine the surface roughness. In the CARE method, the top of this cluster was selectively removed, thus creating a smooth surface. Polymers with C–C bonds, such as polymethyl methacrylate and fluorinated ethylene propylene, were also smoothed using the CARE method. These results indicate that the CARE method is highly effective in polishing polymer materials.

A channel-cut crystal monochromator (CCM) is a popular and powerful device for producing monochromatic x-ray beams with extreme angular stability at a nano-radian level. Narrowing the groove width of CCMs has various benefits; for example, it is made possible to design more compact CCMs with an equivalent working energy range and to reduce the optical delay and the amount of beam shift, enhancing compatibility with various experimental techniques. An obstacle to the use of narrow-groove CCMs is the lack of a high-precision finishing method for the inner-wall reflecting surfaces, which imposes the distortion of x-ray wavefronts and spectral purity. We propose a new, damage-free surface-finishing method for silicon CCMs with a narrow groove of 1 mm or less with a localized etching technique using plasma generated with a wire electrode of 50 µm diameter under atmospheric pressure. Repeating plasma-on and plasma-off periods with a pulsed power supply, we reduce the concentration of reaction products through self-diffusion during the plasma-off periods and minimize the redeposition of the products on the processed surface that deteriorates the surface roughness. Under optimized conditions, we processed a CCM with a groove width of 1.2 mm, which has uniform reflection profiles and a nearly ideal reflectivity behavior for coherent monochromatic x rays.

At Lawrence Berkeley National Laboratory’s Advanced Light Source, we are developing x-ray wavefront sensors to support the creation and operation of beamlines with diffraction-limited quality. Our new approach to rapid, intermittent wavefront sensing operates in reflection at glancing incidence angles and is compatible with the high-power densities of modern beamlines. For soft x-ray applications especially, the wavefront sensor can operate upstream of the exit slit in a vertically dispersed beam. This single-shot technique supports lateral shearing interferometry and Hartmann wavefront sensing; it can be adapted to speckle-based techniques as well. The reflected beam is directed to an off-axis YAG crystal that produces scintillated visible light. A small mirror reflects the light to a microscope and camera, and the measured wavefront shape information can be used as feedback to adaptive x-ray mirror elements. A compact array of gratings enables measurement across a broad range of photon energies or wavefront curvatures. We describe recent demonstrations at soft x-ray and hard x-ray wavelengths measuring an adaptive x-ray mirror, and a toroidal focusing mirror.

To planarize semiconductor materials such as gallium nitride (GaN) and silicon carbide with high efficiency, we developed a polarization method that combines ultraviolet irradiation and an abrasive-free polishing method known as catalyst-referred etching (CARE). In this method, the substrate surface is photoelectrochemically oxidized, thus improving the removal rate. Accordingly, an atomically well-ordered surface was obtained at a removal rate 100 times higher than that of the conventional CARE method without ultraviolet irradiation. However, in some cases, for GaN substrates with a high oxygen impurity concentration area, the oxidation rate is nonuniform on the substrate surface, resulting in the formation of a rough surface. In this study, we propose the application of a positive bias to the GaN substrate to suppress the oxidation rate fluctuation. In the positive bias state, the width of the depletion layer generated at the interface of GaN and the etchant becomes uniform on the entire surface regardless of crystallographic fluctuation, thereby achieving a uniform oxidation rate. When only 3.0 V was applied, the oxidation rate was uniform; thus, a flat GaN surface without the footprint originating from crystallographic fluctuations was obtained.

Photoelectrochemical (PEC) oxidation is currently employed to improve the removal rates of surface polishing methods applied to gallium nitride (GaN) wafers, such as PEC mechanical polishing (PECMP) and PEC catalyst-referred etching (PEC-CARE). The use of PEC along with these methods has successfully achieved removal rates as high as 720 nm h⁻¹ while still ensuring the highly ordered step-and-terrace structures generated by the same methods when PEC-oxidation is not employed. However, the atomic-scale phenomena induced by PEC oxidation to assist the polishing process of GaN surfaces remain unclear. To address such a question, this study investigates the role of PEC oxidation during CARE as an example. The results demonstrate that PEC oxidation selectively occurs at the step edge and advances through the GaN (0001) surface laterally rather than in the depth direction, thus enabling high-speed polishing and resulting in a highly ordered surface, both crystallographically and geometrically.