GFG. R. Facer

G. R. Facer

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

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G. R. Facer has a total of 35 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Many-body spin-related phenomena in ultra low-disorder quantum wires

    by D. J. Reilly, G. R. Facer, A. S. Dzurak, B. E. Kane, R. G. Clark, P. J. Stiles, A. R. Hamilton, J. L. O’brien, N. E. Lumpkin, L. N. Pfeiffer, et al.

    Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to 0.7×2e2/h in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra low-disorder GaAs/AlxGa1−xAs quantum wires with nominal lengths l=0, 0.5, and 2 μm, fabricated from structures free of the disorder associated with modulation doping. In a direct comparison in zero magnetic field we observe structure near 0.7×2e2/h for l=0, whereas the l=2 μm wires show structure evolving with increasing electron density to 0.5×2e2/h, the value expected for an ideal spin-split subband. For intermediate lengths (l=0.5 μm) the feature at 0.7×2e2/h evolves to 0.55×2e2/h with increasing density. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the one-dimensional region.


  • Evidence for ballistic electron transport exceeding 160 μm in an undoped GaAs/AlxGa1−xAs field-effect transistor

    by G. R. Facer, B. E. Kane, A. S. Dzurak, R. J. Heron, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, K. W. West

    We report measurements of GaAs/AlxGa1−xAs undoped field-effect transistors in which two-dimensional electron gases (2DEG's) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3×1011 cm−2 exceed 4×106 cm2V−1s−1. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100-μm samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 μm are observed in magnetic-focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.


  • Open Access

    Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

    by G. R. Facer, B. E. Kane, A. S. Dzurak, R. J. Heron, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, K. W. West

    We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm^2 exceed 4 E6 cm^2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.

  • Transport measurements of in-plane critical fields inYBa2Cu3O7−δto 300 T

    by A. S. Dzurak, B. E. Kane, R. G. Clark, N. E. Lumpkin, J. O’brien, G. R. Facer, R. P. Starrett, A. Skougarevsky, H. Nakagawa, N. Miura, et al.

    Thin-film YBa2Cu3O7−δ has been studied with in-plane magnetic fields B to 850 T, with good signal-to-noise to 300 T, using a GHz-transmission-line technique for electrical transport measurements in explosive-driven microsecond pulsed magnetic fields. At an ambient temperature of 1.6 K with B⊥c axis we find an onset of dissipation at 150 T, the highest field reported, with a saturation of resistivity at 240 T. Comparison with the Pauli limit Bp=155 T expected for this material suggests that the critical field is limited by spin paramagnetism.