G. R. Facer
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
G. R. Facer has a total of 35 co-authors. Here are the top co-authors by number of shared publications:
R. G. Clark
4 shared publications- Andrew S. Dzurak
School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, Australia
3 shared publications - B. E. Kane
Laboratory for Physical Sciences, College Park, Maryland 20740
3 shared publications K. W. West
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
3 shared publicationsL. N. Pfeiffer
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
3 shared publications- N. E. Lumpkin
Centre for Quantum Computer Technology, University of New South Wales, Sydney 2052, Australia
3 shared publications
Latest Publications
- 13 March 2001
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (12) , 121311
Many-body spin-related phenomena in ultra low-disorder quantum wires
Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra low-disorder quantum wires with nominal lengths 0.5, and 2 fabricated from structures free of the disorder associated with modulation doping. In a direct comparison in zero magnetic field we observe structure near for whereas the wires show structure evolving with increasing electron density to the value expected for an ideal spin-split subband. For intermediate lengths the feature at evolves to with increasing density. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the one-dimensional region.- 13 March 2001
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (12) , 121311
Many-body spin-related phenomena in ultra low-disorder quantum wires
Zero length quantum wires (or point contacts) exhibit unexplained conductance structure close to in the absence of an applied magnetic field. We have studied the density- and temperature-dependent conductance of ultra low-disorder quantum wires with nominal lengths 0.5, and 2 fabricated from structures free of the disorder associated with modulation doping. In a direct comparison in zero magnetic field we observe structure near for whereas the wires show structure evolving with increasing electron density to the value expected for an ideal spin-split subband. For intermediate lengths the feature at evolves to with increasing density. Our results suggest the dominant mechanism through which electrons interact can be strongly affected by the length of the one-dimensional region.- 15 February 1999
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (7) , 4622-4625
Evidence for ballistic electron transport exceeding 160 μm in an undoped field-effect transistorWe report measurements of As undoped field-effect transistors in which two-dimensional electron gases (2DEG's) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at K and density exceed . At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100-μm samples. Below K, clear signatures of ballistic travel over path lengths in excess of 160 m are observed in magnetic-focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.- 15 February 1999
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (7) , 4622-4625
Evidence for ballistic electron transport exceeding 160 μm in an undoped field-effect transistorWe report measurements of As undoped field-effect transistors in which two-dimensional electron gases (2DEG's) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at K and density exceed . At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100-μm samples. Below K, clear signatures of ballistic travel over path lengths in excess of 160 m are observed in magnetic-focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.- Open Access
Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm^2 exceed 4 E6 cm^2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.
Open AccessBallistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm^2 exceed 4 E6 cm^2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.
- 1 June 1998
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (22) , R14084-R14087
Transport measurements of in-plane critical fields into 300 TThin-film has been studied with in-plane magnetic fields to 850 T, with good signal-to-noise to 300 T, using a GHz-transmission-line technique for electrical transport measurements in explosive-driven microsecond pulsed magnetic fields. At an ambient temperature of 1.6 K with axis we find an onset of dissipation at 150 T, the highest field reported, with a saturation of resistivity at 240 T. Comparison with the Pauli limit T expected for this material suggests that the critical field is limited by spin paramagnetism.- 1 June 1998
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (22) , R14084-R14087
Transport measurements of in-plane critical fields into 300 TThin-film has been studied with in-plane magnetic fields to 850 T, with good signal-to-noise to 300 T, using a GHz-transmission-line technique for electrical transport measurements in explosive-driven microsecond pulsed magnetic fields. At an ambient temperature of 1.6 K with axis we find an onset of dissipation at 150 T, the highest field reported, with a saturation of resistivity at 240 T. Comparison with the Pauli limit T expected for this material suggests that the critical field is limited by spin paramagnetism.