Jan Petter Mæhlen
Research Subjects
Jan Petter Mæhlen has a total of 20 co-authors. Here are the top co-authors by number of shared publications:
- Alexey Y. Koposov
University of Oslo
2 shared publications - Adri C. T. van Duin
The Pennsylvania State University
1 shared publication - Arve Holt
Institute for Energy Technology, Solar Instituttvn 18, Kjeller 2027, Norway
1 shared publication Asbjørn Ulvestad
Department of Battery Technology
1 shared publication- Carl Erik Lie Foss
Institute for Energy Technology (IFE), NO-2027 Kjeller, Norway
1 shared publication - Caroline Keller
Université Paris‐Saclay, CEA, CNRS, NIMBE, LEEL, CEA Saclay Gif sur Yvette Cedex France
1 shared publication
Latest Publications
- Open Access
- 21 February 2025
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry Letters
- Vol. 16 (9) , 2238-2244
Revisiting Mechanism of Silicon Degradation in Li-Ion Batteries: Effect of Delithiation Examined by Microscopy Combined with ReaxFF
For the past decade, silicon (Si) as a material for negative electrodes of Li-ion batteries has been considered among the most promising candidates for replacing commonly used graphite. However, Si-based electrodes suffer from severe degradation, which depends on the type of Si materials used. Generally, the degradation of Si is mainly viewed in terms of particle fracturing during lithiation accompanied by constant growth of the solid electrolyte interphase (SEI). At the same time, the reversed process, delithiation, has received little attention. The present work demonstrates the morphological changes of the Si components of electrodes occurring during electrochemical cycling through electron microscopy analyses. These changes are rationalized through the migration of Si, resulting in the formation of Si dendrites embedded in SEI. With the assistance of ReaxFF modeling, we demonstrate that the delithiation predominantly drives this process. The present study reveals that fracturing of Si particles is not the only cause for degradation, as the Si surfaces dramatically change after prolonged cycling, resulting in the formation of Si dendrites.
- 21 February 2025
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry Letters
- Vol. 16 (9) , 2238-2244
Open AccessRevisiting Mechanism of Silicon Degradation in Li-Ion Batteries: Effect of Delithiation Examined by Microscopy Combined with ReaxFF
For the past decade, silicon (Si) as a material for negative electrodes of Li-ion batteries has been considered among the most promising candidates for replacing commonly used graphite. However, Si-based electrodes suffer from severe degradation, which depends on the type of Si materials used. Generally, the degradation of Si is mainly viewed in terms of particle fracturing during lithiation accompanied by constant growth of the solid electrolyte interphase (SEI). At the same time, the reversed process, delithiation, has received little attention. The present work demonstrates the morphological changes of the Si components of electrodes occurring during electrochemical cycling through electron microscopy analyses. These changes are rationalized through the migration of Si, resulting in the formation of Si dendrites embedded in SEI. With the assistance of ReaxFF modeling, we demonstrate that the delithiation predominantly drives this process. The present study reveals that fracturing of Si particles is not the only cause for degradation, as the Si surfaces dramatically change after prolonged cycling, resulting in the formation of Si dendrites.
- Open Access
Revealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves
The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the LiSi and LiSi phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data.Open AccessRevealing Silicon’s Delithiation Behaviour through Empirical Analysis of Galvanostatic Charge–Discharge Curves
The galvanostatic charge–discharge (GCD) behaviour of silicon (Si) is known to depend strongly on morphology, cycling conditions and electrochemical environment. One common method for analysing GCD curves is through differential capacity, but the data processing required necessarily degrades the results. Here we present a method of extracting empirical information from the delithiation step in GCD data for Si at C-rates above equilibrium conditions. We find that the function is able to quickly and accurately determine the best fit to historical half-cell data on amorphous Si nanowires and thin films, and analysis of the results reveals that the function is capable of distinguishing the capacity contributions from the LiSi and LiSi phases to the total capacity. The method can also pick up small differences in the phase behaviour of the different samples, making it a powerful technique for further analysis of Si data from the literature. The method was also used for predicting the size of the reservoir effect (the apparent amount of Li remaining in the electrode), making it a useful technique for quickly determining voltage slippage and related phenomena. This work is presented as a starting point for more in-depth empirical analysis of Si GCD data. - 1 January 2009
- Published by Springer Nature in MRS Proceedings
- Vol. 1210
Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications
- 1 January 2009
- Published by Springer Nature in MRS Proceedings
- Vol. 1210
Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications