G. L. J. A. Rikken
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
G. L. J. A. Rikken has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
P. Wyder
Grenoble High Magnetic Field Laboratory, MPI-FKF/CNRS, 25 Avenue des Martyrs, F-38042 Grenoble, France
4 shared publicationsJ. M. Chamberlain
Physics Department, Nottingham University, Nottingham NG7 2RD, United Kingdom
2 shared publicationsA. A. Reeder
Department of Physics, The University of Nottingham, University Park, Nottingham NG7?D, England, United Kingdom
1 shared publicationA. P. van Gelder
Research Institute for Materials, University of Nijmegen, Toernooiveld, NL-6525 ED Nijmegen, The Netherlands
1 shared publicationB.A. van Tiggelen
1 shared publicationG. Wagnière
1 shared publication
Latest Publications
- 25 February 2005
- Published by Elsevier in Chemical Physics Letters
- Vol. 403 (4-6) , 298-302
Light induced dynamic magnetochiral anisotropy
- 25 February 2005
- Published by Elsevier in Chemical Physics Letters
- Vol. 403 (4-6) , 298-302
Light induced dynamic magnetochiral anisotropy
- Top Cited Papers
- 6 January 2005
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 94 (1) , 016601
Magnetoelectric Anisotropy in Diffusive Transport
In this Letter we prove the existence of a new general diffusive transport phenomenon in crossed electric and magnetic fields: magnetoelectric anisotropy. For the specific case of diffusive electrical transport, we present a relativistic model to quantify this effect and present experimental evidence for its existence.
- 6 January 2005
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 94 (1) , 016601
Top Cited PapersMagnetoelectric Anisotropy in Diffusive Transport
In this Letter we prove the existence of a new general diffusive transport phenomenon in crossed electric and magnetic fields: magnetoelectric anisotropy. For the specific case of diffusive electrical transport, we present a relativistic model to quantify this effect and present experimental evidence for its existence.
- 15 August 1989
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (4) , 1727-1738
Edge effect in near-intrinsic germanium observed with a novel method for resistivity measurements
We report the observation of edge effects in the magnetoconductance of macroscopic samples of near-intrinsic germanium near room temperature as a model system for an ambipolar conductor. We used a novel method for resistivity measurements, which allows for a check of the consistency of a description with a single resistivity tensor for the whole sample. Such a description was found to fail near the magnetic field strengths with a vanishing Hall coefficient. The inconsistency is attributed to the spatial variation of the density of charge carriers, which is caused by the unbalance of the influxes of carriers to the sample’s edge and their recombination/generation via traps in the edge region.
- 15 August 1989
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (4) , 1727-1738
Edge effect in near-intrinsic germanium observed with a novel method for resistivity measurements
We report the observation of edge effects in the magnetoconductance of macroscopic samples of near-intrinsic germanium near room temperature as a model system for an ambipolar conductor. We used a novel method for resistivity measurements, which allows for a check of the consistency of a description with a single resistivity tensor for the whole sample. Such a description was found to fail near the magnetic field strengths with a vanishing Hall coefficient. The inconsistency is attributed to the spatial variation of the density of charge carriers, which is caused by the unbalance of the influxes of carriers to the sample’s edge and their recombination/generation via traps in the edge region.
- 15 August 1988
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (6) , 4156-4164
Time-resolved recombination dynamics of photoionized hydrogenlike impurities
The dynamics of recombination of photoionized shallow donors and free electrons is investigated on a nanosecond time scale by monitoring the photoconductive decay of high-purity n-type InP (μ≳ ) after pulsed far-infrared excitation. The effects of several parameters (temperature, electric fields, doping concentration, and excitation intensity) on the recombination process have been investigated, and models are proposed to explain the observed phenomena, taking into account excited bound impurity states, impact ionization, and Auger processes.- 15 August 1988
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (6) , 4156-4164
Time-resolved recombination dynamics of photoionized hydrogenlike impurities
The dynamics of recombination of photoionized shallow donors and free electrons is investigated on a nanosecond time scale by monitoring the photoconductive decay of high-purity n-type InP (μ≳ ) after pulsed far-infrared excitation. The effects of several parameters (temperature, electric fields, doping concentration, and excitation intensity) on the recombination process have been investigated, and models are proposed to explain the observed phenomena, taking into account excited bound impurity states, impact ionization, and Auger processes.- 15 February 1987
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (5) , 2391-2398
Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP
The time-resolved photoresponse of high-purity ( ? sup -1—) n-type indium phosphide has been investigated at λ=118.8 μm with use of a pulsed far-infrared laser. An effective conduction-band lifetime of 60 ns is found which increases slightly in a magnetic field. For sample dc bias voltages exceeding a few volts per centimeter, long tails develop in the photoresponse which last more than 10 μs. The behavior of these tails is examined for various incident laser powers, magnetic fields, and sample bias voltages. It is shown that a four-level model involving impact excitation from impurity states is necessary to describe the photoconductive response. A critical requirement of the model is that the lifetimes of participating ‘‘bottleneck’’ states are 2 and 10 μs. On the basis of known transition probabilities, these bottlenecks are therefore tentatively assigned to the 2 and 2s states.- 15 February 1987
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (5) , 2391-2398
Impact excitation and bottleneck effects in the time-resolved far-infrared photoresponse of high-purity InP
The time-resolved photoresponse of high-purity ( ? sup -1—) n-type indium phosphide has been investigated at λ=118.8 μm with use of a pulsed far-infrared laser. An effective conduction-band lifetime of 60 ns is found which increases slightly in a magnetic field. For sample dc bias voltages exceeding a few volts per centimeter, long tails develop in the photoresponse which last more than 10 μs. The behavior of these tails is examined for various incident laser powers, magnetic fields, and sample bias voltages. It is shown that a four-level model involving impact excitation from impurity states is necessary to describe the photoconductive response. A critical requirement of the model is that the lifetimes of participating ‘‘bottleneck’’ states are 2 and 10 μs. On the basis of known transition probabilities, these bottlenecks are therefore tentatively assigned to the 2 and 2s states.