YWY. J. Wang
Y. J. Wang
*This is an algorithmically generated author record based on publicly available information.
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Y. J. Wang has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
B. Q. Liang
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
2 shared publicationsX. Chen
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
2 shared publicationsY. J. Tang
State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, People’s Republic of China
1 shared publication- Y. J. Tang
Center for Magnetic Recording Research, University of California at San Diego, 9500 Gilman Dr., La Jolla, CA 92093-0401, USA
1 shared publication
Latest Publications
- 1 February 2000
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (5) , 3239-3242
Abnormal magnetoresistance effect in self-dopedthin filmsWe report an abnormal room-temperature magnetoresistance behavior in self-doped films with Ag doping concentration Both positive magnetoresistance and negative magnetoresistance are found with the magnetic field applied along perpendicular to the sample surface and opposite direction, respectively. It is also evident from our study that such magnetoresistance (MR) behavior is strongly dependent on the doping concentration δ and the annealing time. The origin of the MR behavior is discussed and tentatively ascribed to the complex structure of the films, which is analyzed by x-ray measurement.- 1 February 2000
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (5) , 3239-3242
Abnormal magnetoresistance effect in self-dopedthin filmsWe report an abnormal room-temperature magnetoresistance behavior in self-doped films with Ag doping concentration Both positive magnetoresistance and negative magnetoresistance are found with the magnetic field applied along perpendicular to the sample surface and opposite direction, respectively. It is also evident from our study that such magnetoresistance (MR) behavior is strongly dependent on the doping concentration δ and the annealing time. The origin of the MR behavior is discussed and tentatively ascribed to the complex structure of the films, which is analyzed by x-ray measurement.- 5 October 1999
- Published by Wiley in Physica Status Solidi (b)
- Vol. 215 (2) , 1145-1150
Abnormal Magnetoresistance Effects at Low Temperature in Silver Telluride Thin Films
- 5 October 1999
- Published by Wiley in Physica Status Solidi (b)
- Vol. 215 (2) , 1145-1150
Abnormal Magnetoresistance Effects at Low Temperature in Silver Telluride Thin Films