Ahmed A. Busnaina
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Ahmed A. Busnaina has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
Jin-Goo Park
Department of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, South Korea
1 shared publicationJun Huang
NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing, Northeastern University, Boston, USA
1 shared publicationKaveh Bakhtari
NSF Center for Microcontamination Control, Northeastern University, Boston, Massachusetts 02115
1 shared publicationPrashanth Makaram
NSF Center for Microcontamination Control, Northeastern University, Boston, Massachusetts 02115
1 shared publication- Rasim Guldiken
Mechanical Engineering Department, University of South Florida, Tampa, FL, USA
1 shared publication Sivasubramanian Somu
NSF Nanoscale Science and Engineering Center for High-rate Nanomanufacturing, Northeastern University, Boston, USA
1 shared publication
Latest Publications
- 10 July 2013
- Published by Springer Nature in Electronic Materials Letters
- Vol. 9 (4) , 505-507
Spin coating fabrication of thin film transistors using enriched semiconducting SWNT solution
- 10 July 2013
- Published by Springer Nature in Electronic Materials Letters
- Vol. 9 (4) , 505-507
Spin coating fabrication of thin film transistors using enriched semiconducting SWNT solution
- 1 January 2006
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 153 (9) , G846-G850
Experimental and Numerical Investigation of Nanoparticle Removal Using Acoustic Streaming and the Effect of Time
The removal of nanoparticles is becoming increasingly challenging as the minimum linewidth continues to decrease in semiconductor manufacturing. In this paper, the removal of nanoparticles from flat substrates using acoustic streaming is investigated. Bare silicon wafers and masks with a 4nm4nm silicon cap layer are cleaned. The silicon-cap films are used in extreme ultraviolet masks to protect Mo–Si reflective multilayers. The removal of 63nm63nm polystyrene latex (PSL) particles from these substrates is conducted using single-wafer megasonic cleaning. The results show higher than 99% removal of PSL nanoparticles. The results also show that dilute SC1 provides faster removal of particles, which is also verified by the analytical analysis. Particle removal from the 4nm4nm Si-cap substrate is slightly more difficult as compared to bare silicon wafers. The experimental results show that the removal of nanoparticles takes a relatively long removal time. Numerical simulations showed that the long time is due to particle oscillatory motion and redeposition, and that this phenomenon is not observed in the removal of sub- μmμm or larger size particles.
- 1 January 2006
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 153 (9) , G846-G850
Experimental and Numerical Investigation of Nanoparticle Removal Using Acoustic Streaming and the Effect of Time
The removal of nanoparticles is becoming increasingly challenging as the minimum linewidth continues to decrease in semiconductor manufacturing. In this paper, the removal of nanoparticles from flat substrates using acoustic streaming is investigated. Bare silicon wafers and masks with a 4nm4nm silicon cap layer are cleaned. The silicon-cap films are used in extreme ultraviolet masks to protect Mo–Si reflective multilayers. The removal of 63nm63nm polystyrene latex (PSL) particles from these substrates is conducted using single-wafer megasonic cleaning. The results show higher than 99% removal of PSL nanoparticles. The results also show that dilute SC1 provides faster removal of particles, which is also verified by the analytical analysis. Particle removal from the 4nm4nm Si-cap substrate is slightly more difficult as compared to bare silicon wafers. The experimental results show that the removal of nanoparticles takes a relatively long removal time. Numerical simulations showed that the long time is due to particle oscillatory motion and redeposition, and that this phenomenon is not observed in the removal of sub- μmμm or larger size particles.