Momme Winkelnkemper
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Momme Winkelnkemper has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
A. Hoffmann
2 shared publicationsAndrei Schliwa
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
2 shared publicationsD. Bimberg
2 shared publicationsDieter Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
2 shared publicationsR. Seguin
2 shared publicationsS. Rodt
2 shared publications
Latest Publications
- Open Access
GaN/AlN Quantum Dots for Single Qubit Emitters
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.
Open AccessGaN/AlN Quantum Dots for Single Qubit Emitters
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we calculate the optical interband transitions of the QDs and their polarization properties. We show that an anisotropy of the QD confinement potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to a pronounced linear polarization of the ground state and excited state transitions. An externally applied uniaxial stress can be used to either induce a linear polarization of the ground-state transition for emission of single polarized photons or even to compensate the polarization induced by the structural elongation.
- Open Access
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.
Open AccessPolarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.
- 26 October 2006
- Published by American Physical Society (APS) in Physical Review B
- Vol. 74 (15) , 155322
Interrelation of structural and electronic properties in quantum dots using an eight-band modelWe present an eight-band -model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride QDs formed by composition fluctuations in layers. The eight-band -model accounts for strain effects, piezoelectricity and pyroelectricity, and spin-orbit and crystal-field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.- 26 October 2006
- Published by American Physical Society (APS) in Physical Review B
- Vol. 74 (15) , 155322
Interrelation of structural and electronic properties in quantum dots using an eight-band modelWe present an eight-band -model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride QDs formed by composition fluctuations in layers. The eight-band -model accounts for strain effects, piezoelectricity and pyroelectricity, and spin-orbit and crystal-field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.- Open Access
Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.
Open AccessInterrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.