V. N. Gladilin
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
V. N. Gladilin has a total of 34 co-authors. Here are the top co-authors by number of shared publications:
- Jozef T. Devreese
Theory of Quantum and Complex Systems (TQC) Universiteit Antwerpen, CDE, Universiteitsplein 1 B-2610 Antwerpen Belgium
8 shared publications - Vladimir M. Fomin
Institute for Emerging Electronic Technologies Leibniz IFW Dresden Helmholtzstraße 20 01069 Dresden Germany
6 shared publications D. Sprinzl
Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
3 shared publicationsJ. H. Wolter
COBRA, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
3 shared publications- Mihail D. Croitoru
University of Bordeaux
3 shared publications P. Nahálková
Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
3 shared publications
Latest Publications
- 13 September 2012
- Published by American Physical Society (APS) in Physical Review B
- Vol. 86 (10) , 104508
Aharonov-Bohm oscillations in the vortex dynamics in superconducting hollow cylinders
Using time-dependent Ginzburg-Landau theory we demonstrate that the Aharonov-Bohm (AB) effect, resulting from a Berry phase shift of the (macroscopic) wave function, is revealed through the dynamics of topological phase defects present in that same wave function. We study vortices and antivortices on the surface of a hollow superconducting cylinder, moving on circular orbits as they are subjected to the force from the current flowing parallel to the cylinder axis. Due to the AB effect the orbit deflections, caused by a magnetic field component along the cylinder axis, become periodic as a function of field, leading to strong and robust resistance oscillations.
- 13 September 2012
- Published by American Physical Society (APS) in Physical Review B
- Vol. 86 (10) , 104508
Aharonov-Bohm oscillations in the vortex dynamics in superconducting hollow cylinders
Using time-dependent Ginzburg-Landau theory we demonstrate that the Aharonov-Bohm (AB) effect, resulting from a Berry phase shift of the (macroscopic) wave function, is revealed through the dynamics of topological phase defects present in that same wave function. We study vortices and antivortices on the surface of a hollow superconducting cylinder, moving on circular orbits as they are subjected to the force from the current flowing parallel to the cylinder axis. Due to the AB effect the orbit deflections, caused by a magnetic field component along the cylinder axis, become periodic as a function of field, leading to strong and robust resistance oscillations.
- 30 June 2012
- Published by Elsevier in Solid State Communications
- Vol. 152 (18) , 1781-1785
Negative- regime in the ac magnetic response of superconductor nanoshells
- 30 June 2012
- Published by Elsevier in Solid State Communications
- Vol. 152 (18) , 1781-1785
Negative- regime in the ac magnetic response of superconductor nanoshells
- 4 May 2007
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 893 (1) , 683
Oscillatory persistent currents in nano-volcanoes
Using an ultra sensitive torque magnetometer we performed magnetic moment measurements on a sample containing 29 layers of self‐assembled InAs/GaAs quantum rings. These strongly non‐ideal rings, in fact they more resembling nano‐volcanoes, show a surprisingly high magnetic moment signal corresponding to a single electron persistent current of about 0.2μA. The predictions of our theoretical model, based solely on X‐STM measurements, is in good agreement with our experiments.
- 4 May 2007
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 893 (1) , 683
Oscillatory persistent currents in nano-volcanoes
Using an ultra sensitive torque magnetometer we performed magnetic moment measurements on a sample containing 29 layers of self‐assembled InAs/GaAs quantum rings. These strongly non‐ideal rings, in fact they more resembling nano‐volcanoes, show a surprisingly high magnetic moment signal corresponding to a single electron persistent current of about 0.2μA. The predictions of our theoretical model, based solely on X‐STM measurements, is in good agreement with our experiments.
- 12 March 2007
- Published by American Physical Society (APS) in Physical Review B
- Vol. 75 (11) , 113306
Two-phonon assisted exciton spin relaxation due to exchange interaction in spherical quantum dots
Spin relaxation in undoped quasispherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals were corrected for spin-insensitive contributions to the exciton bleaching dynamics, allowing us to determine the pure spin-related exciton dynamics. To explain the observed room-temperature spin-relaxation time of several nanoseconds, we propose a mechanism based on intralevel exciton transitions with the emission of one LO phonon, the absorption of another LO phonon, and an electron spin flip, which is driven by the electron-hole exchange interaction. The transition rates, calculated in the present work for different sizes of quantum dots and temperatures, are in fair agreement with our experimental results.
- 12 March 2007
- Published by American Physical Society (APS) in Physical Review B
- Vol. 75 (11) , 113306
Two-phonon assisted exciton spin relaxation due to exchange interaction in spherical quantum dots
Spin relaxation in undoped quasispherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals were corrected for spin-insensitive contributions to the exciton bleaching dynamics, allowing us to determine the pure spin-related exciton dynamics. To explain the observed room-temperature spin-relaxation time of several nanoseconds, we propose a mechanism based on intralevel exciton transitions with the emission of one LO phonon, the absorption of another LO phonon, and an electron spin flip, which is driven by the electron-hole exchange interaction. The transition rates, calculated in the present work for different sizes of quantum dots and temperatures, are in fair agreement with our experimental results.
- 1 December 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (12) , 4291-4294
Spin‐sensitive differential transmission experiments in quasi‐spherical CdS quantum dots
- 1 December 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (12) , 4291-4294
Spin‐sensitive differential transmission experiments in quasi‐spherical CdS quantum dots
- 7 March 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (4) , 870-873
Spin‐polarised carriers in CdS quasi‐spherical quantum dots
- 7 March 2006
- Published by Wiley in physica status solidi (c)
- Vol. 3 (4) , 870-873
Spin‐polarised carriers in CdS quasi‐spherical quantum dots
- 18 October 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 70 (14) , 144408
Polarized-neutron reflectivity for thin films of dilute magnetic alloys
We analyze the influence of the surface-induced anisotropy of magnetic-impurity spins on the magnetization of thin polycrystalline films, consisting of weakly-coupled grains of homogeneous dilute magnetic alloys. The calculated magnetization depth profiles across such films appear to be very sensitive to the grain shape. Based on these calculations, we theoretically study the reflection of polarized neutrons by films with different microstructure and show that polarized-neutron reflectivity measurements can provide a direct probe of the surface-induced magnetic anisotropy of the impurity spins in films of dilute magnetic alloys.- 18 October 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 70 (14) , 144408
Polarized-neutron reflectivity for thin films of dilute magnetic alloys
We analyze the influence of the surface-induced anisotropy of magnetic-impurity spins on the magnetization of thin polycrystalline films, consisting of weakly-coupled grains of homogeneous dilute magnetic alloys. The calculated magnetization depth profiles across such films appear to be very sensitive to the grain shape. Based on these calculations, we theoretically study the reflection of polarized neutrons by films with different microstructure and show that polarized-neutron reflectivity measurements can provide a direct probe of the surface-induced magnetic anisotropy of the impurity spins in films of dilute magnetic alloys.- 15 October 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 70 (14) , 144506
Magnetic susceptibility of ultrasmall superconductor grains
For assemblies of superconductor nanograins, the magnetic response is analyzed as a function of both temperature and magnetic field. In order to describe the interaction energy of electron pairs for a huge number of many-particle states, involved in calculations, we develop a simple approximation, based on the Richardson solution for the reduced BCS Hamiltonian and applicable over a wide range of the grain sizes and interaction strengths at arbitrary distributions of single-electron energy levels in a grain. Our study is focused upon ultrasmall grains, where both the mean value of the nearest-neighbor spacing of single-electron energy levels in a grain and variations of this spacing from grain to grain significantly exceed the superconducting gap in bulk samples of the same material. For these ultrasmall superconductor grains, the overall profiles of the magnetic susceptibility as a function of magnetic field and temperature are demonstrated to be qualitatively different from those for normal grains. We show that the analyzed signatures of pairing correlations are sufficiently stable with respect to variations of the average value of the grain size and its dispersion over an assembly of nanograins. The presence of these signatures does not depend on a particular choice of statistics, obeyed by single-electron energy levels in grains.
- 15 October 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 70 (14) , 144506
Magnetic susceptibility of ultrasmall superconductor grains
For assemblies of superconductor nanograins, the magnetic response is analyzed as a function of both temperature and magnetic field. In order to describe the interaction energy of electron pairs for a huge number of many-particle states, involved in calculations, we develop a simple approximation, based on the Richardson solution for the reduced BCS Hamiltonian and applicable over a wide range of the grain sizes and interaction strengths at arbitrary distributions of single-electron energy levels in a grain. Our study is focused upon ultrasmall grains, where both the mean value of the nearest-neighbor spacing of single-electron energy levels in a grain and variations of this spacing from grain to grain significantly exceed the superconducting gap in bulk samples of the same material. For these ultrasmall superconductor grains, the overall profiles of the magnetic susceptibility as a function of magnetic field and temperature are demonstrated to be qualitatively different from those for normal grains. We show that the analyzed signatures of pairing correlations are sufficiently stable with respect to variations of the average value of the grain size and its dispersion over an assembly of nanograins. The presence of these signatures does not depend on a particular choice of statistics, obeyed by single-electron energy levels in grains.
- 15 August 2004
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (4) , 2305-2310
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
A model for the nanosize double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed, which enables both physical accuracy and flexibility. The quantum Liouville equation in the Wigner function representation has been used to deal with the quantum transport problem. Accounting for electron scattering due to ionized impurities, acoustic phonons, and surface roughness at the interface, device characteristics are obtained as a function of structure parameters. From the analysis of the Wigner function, the coexistence of diffusive and ballistic transport naturally emerges. The obtained characteristics show that the double-gate device is a potential structure for ultimate complementary metal-oxide-semiconductor scaling.- 15 August 2004
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (4) , 2305-2310
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
A model for the nanosize double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is developed, which enables both physical accuracy and flexibility. The quantum Liouville equation in the Wigner function representation has been used to deal with the quantum transport problem. Accounting for electron scattering due to ionized impurities, acoustic phonons, and surface roughness at the interface, device characteristics are obtained as a function of structure parameters. From the analysis of the Wigner function, the coexistence of diffusive and ballistic transport naturally emerges. The obtained characteristics show that the double-gate device is a potential structure for ultimate complementary metal-oxide-semiconductor scaling.- 30 December 2003
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 696 (1) , 919
Electroluminescence Spectra of an STM-Tip-Induced Quantum Dot
We analyze the electroluminescence spectrum of an STM‐tip‐induced quantum dot in a GaAs surface layer. A flexible model has been developed, that combines analytical and numerical methods and describes the key features of many‐particle states in the STM‐tip induced quantum dot. The dot is characterized by its depth and lateral width, which are experimentally controlled by the bias and the tunneling current. We find, in agreement with experiment, that increasing voltage on the STM‐tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunneling current through the STM‐tip reveal a blue shift.
- 30 December 2003
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 696 (1) , 919
Electroluminescence Spectra of an STM-Tip-Induced Quantum Dot
We analyze the electroluminescence spectrum of an STM‐tip‐induced quantum dot in a GaAs surface layer. A flexible model has been developed, that combines analytical and numerical methods and describes the key features of many‐particle states in the STM‐tip induced quantum dot. The dot is characterized by its depth and lateral width, which are experimentally controlled by the bias and the tunneling current. We find, in agreement with experiment, that increasing voltage on the STM‐tip results in a red shift of the electroluminescence peaks, while the peak positions as a function of the electron tunneling current through the STM‐tip reveal a blue shift.