Qimin Wang

Diamond-like carbon (DLC) films offer high hardness, low friction, and excellent chemical stability; however, their near-surface evolution in reactive remote plasma environments remains poorly understood. This study used a remote plasma source (RPS) to compare the effects of O2 and NF3 plasmas on the structure, chemical state, and properties of DLC films. First-principles calculations were also performed to analyze the migration behavior of O and F atoms. O2 plasma produced relatively mild selective oxidative etching, with an etching rate of approximately 4.57 nm/min. Moderate O2 etching promoted near-surface structural rearrangement, forming a modified region approximately 130 nm thick. This increased the peak near-surface hardness measured by CSM to approximately 37 GPa and reduced the wear rate by approximately 69.6% compared with the untreated film. In contrast, NF3 plasma exhibited a higher etching rate of approximately 22 nm/min and caused pronounced fluorination. The formation of C–Fx bonds, defect generation, and relaxation of the carbon network weakened C–C network connectivity, resulting in degraded mechanical properties and long-term tribological performance. First-principles calculations showed that the migration barriers of O and F atoms are much lower in sp2 than in sp3 carbon structures, indicating that sp2 clusters, edge sites, and defects serve as preferred sites for the migration and reaction of reactive species. These results reveal the distinct mechanisms of O2-induced near-surface reconstruction and strengthening and NF3-induced coupled etching and fluorination, explaining the contrasting effects of the two plasmas on the mechanical performance of DLC films.

Titanium-doped diamond-like carbon (DLC:Ti) films were deposited by magnetron sputtering. The effects of Ti concentration on the microstructure, phase composition and piezoresistive properties of the films were systematically investigated. The surface morphology, crystal structure and chemical bonding states of the samples were characterized using SEM, XRD and XPS. The piezoresistive properties were then assessed by monitoring the resistance change in the thin films using a precision resistance meter under controlled external stimulation. The results demonstrate that the sp²/sp³ ratio of the DLC:Ti films increases with rising Ti concentration, and both Ti–C and Ti–Ti chemical bonds are formed within the films. An excessive β-Ti phase forms when the Ti concentration exceeds 39.7 at.%. The electrical resistance of DLC:Ti films decreases linearly as the applied normal stress increases from 0 to 35 MPa, with a maximum piezoresistive coefficient of −9.0 × 10⁻² GPa⁻¹ achieved for the film with a Ti doping concentration of 12.9 at.%. One hundred cyclic loading–unloading tests induce the structural transition from sp³ to sp², resulting in the graphitization of DLC:Ti films. In addition, external stress facilitates the fracture of Ti–C bonds and the relaxation of residual stress in the DLC:Ti films; the β- to α-Ti phase transformation induced by external loading is also observed in the films. Cyclic piezoresistive tests reveal that the piezoresistive stability of the DLC:Ti films is enhanced with increasing Ti concentration, which is attributed to the increased formation of Ti–C bonds in the films.

Yttrium oxide (Y₂O₃) films have been widely used as protective layers in plasma etching equipment, but achieving stoichiometric films with high deposition rates remains a challenge. In this study, Y₂O₃ films were fabricated by a medium-frequency reactive magnetron sputtering (MF-RMS) technique. The oxygen flow and target control voltage were regulated through a closed-loop feedback control system, which effectively solved the problem. The microstructure, mechanical, optical, and plasma etching properties were systematically investigated. The results showed that near-stoichiometric films can achieve a relatively high deposition rate. Increasing the deposition temperature induced a structural transition in the Y₂O₃ film from a predominantly cubic phase to a mixture of cubic and monoclinic phases. For Y₂O₃ films deposited at room temperature, increasing the bias voltage increased the deposition rate but reduced hardness and elastic modulus. The Y₂O₃ film deposited at 300 °C in the near-metallic mode exhibited the highest hardness and elastic modulus, reaching 13.3 GPa and 222.0 GPa, respectively. All Y₂O₃ films exhibited excellent transmittance and resistance to plasma etching. This study provides an effective protective strategy for semiconductor etching chambers.

As a novel class of thin films, thin-film metallic glasses (TFMGs) hold broad application prospects in biomedicine, electronic components, etc. In this study, CuZr TFMGs were deposited at room temperature using a medium-frequency magnetron sputtering (MFMS) technique. The effects of bias voltage on the microstructure and properties of the films were systematically investigated. The results indicate that the CuZr system exhibits excellent glass-forming ability (GFA), with films possessing a smooth surface. As bias voltage increases, cross-sectional morphology transitions from a glassy morphology to a dimple-like structure. The high bias voltage induces reduced dimple size and significantly increased density. At a bias voltage of −50 V, the hardness of CuZr film reaches a maximum of 9.6 GPa. This hardness is approximately five times and twice that of pure Cu and Zr films, respectively. Compared with Zr film, CuZr TFMGs exhibit a significantly reduced friction coefficient while maintaining a low wear rate. All CuZr films demonstrate excellent electrical conductivity and hydrophobicity, providing the basis for future potential applications.

By integrating cathodic arc evaporation (CAE) with magnetron sputtering (MS) or high-power impulse magnetron sputtering (HiPIMS), hard coatings with diverse multicomponent compositions can be fabricated. Depending on the deposition conditions, the coatings with nano-composite or nano-multilayered microstructures are produced. During the mixing deposition conditions, nano-composite coatings are fabricated, which can be tailored to possess combining properties of super hardness, low friction coefficient, and excellent thermal/chemical stability. For the deposition with larger rotating periods, layer-by-layer deposition was observed. By the nano-multilayered coating design, superior mechanical properties (hardness ≥ 35 GPa), modulated residual stresses, and enhanced high-temperature properties can be obtained. In addition, lubricious elements, low friction (friction coefficient < 0.4), and low wear (−5 mm³/N∙m) both at ambient temperature and high temperature can be realized. Among these coatings, some have been specifically designed to achieve outstanding cutting performance in high-speed cutting applications. Several nitride and oxide hard coatings, such as AlTiN, TiAlN/TiSiN, AlCrN/Cu, and AlCrO, were deposited using a hybrid industrial physical vapor deposition (PVD) coating system. The microstructure, mechanical properties, and cutting performance of these coatings will be discussed.

In this study, Cr coatings, CrN coatings, and CrN/Cr multi-layer coatings were deposited on the surface of Zr-4 alloy by high-power impulse magnetron sputtering (HiPIMS). We have investigated the effect of coating structure on the microstructure, mechanical properties, and high-temperature steam oxidation properties of coatings. The results show that the single-layer CrN coating has higher hardness but performs poorly in high-temperature steam oxidation compared to the Cr coating due to its greater brittleness, which makes it prone to cracking and spalling in high-temperature steam environments and provides a channel for Zr diffusion. In multi-layer coatings, however, they form a fine columnar crystal structure and a smoother surface, and the more layers there are, the better the mechanical properties and resistance to high-temperature steam oxidation of the coating. In a high-temperature steam environment, the CrN layer decomposes to form Cr₂N and N₂, and the N atoms diffuse inwards and react with Zr to form an α-Zr(N) layer, which restricts interdiffusion between Cr and Zr and blocks the diffusion of O into the substrate. Therefore, (CrN/Cr)_n coatings with a multi-layer structure have excellent high-temperature steam corrosion resistance.

A new CuNi/TiB₂ thin-film thermocouple was fabricated using magnetron sputtering. A 400 nm thick CuNi interior layer was deposited on a dielectric substrate initiatory, and then covered by an 800 nm thick TiB₂ layer. The tests revealed that the TiB₂ layer had a dense and columnar cross-section. The measured hardness and elastic modulus of the TiB₂ layer were ~20.5 and 315.9 GPa, respectively. No cracking or delamination occurred at the CuNi/TiB₂ interface. The work functions of the TiB₂ and the CuNi layers were calculated to be 4.406 and 4.726 eV, respectively. The difference in work functions between the TiB₂ and the CuNi was ~0.3 eV. The CuNi/TiB₂ thin-film sensor exhibited a high Seebeck coefficient of 38.07 μV/°C with excellent linearity. The maximum service temperature of the thin-film sensor was evaluated to be ~400 °C. A further increase in temperature degraded the Seebeck coefficient due to oxidation of the TiB₂ layer.

This study explores the utilization of cathodic vacuum arc (CVA) technology to address the limitations of magnetron sputtering technology in preparing amorphous carbon (a-C) coatings, such as having a low ionization rate, low deposition rate, and insufficiently dense structure. Specifically, a-C coatings were prepared by the cathodic vacuum arc (CVA)and the filtered cathodic vacuum arc (FCVA) technology,, one with embedded carbon particles and one without, both having closely related carbon structures. Research is currently underway on bipolar plate coatings for fuel cells. The corrosion behavior of the prepared a-C coatings was examined through Tafel polarization analysis under simulated fuel cell operating conditions as well as potentiostatic analysis at 0.6 V under normal conditions and 1.6 V under start–stop conditions for 7200 s. The coatings before and after corrosion are characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, Raman spectroscopy, and infrared spectroscopy. The results reveal that the incorporation of conductive graphite-like particles in the coatings reduces their contact resistance. However, the gaps between these particles and the coatings act as pathways for corrosive solution, exacerbating the corrosion of the coatings. After corrosion at 0.6 V, both sets of coatings with sp²-hybridized carbon structures are contaminated by elements such as hydrogen and oxygen, leading to an increase in their contact resistance. Under high potential conditions (1.6 V), large corrosion pits and defects appear at the locations of graphite-like carbon particles. Furthermore, both sets of samples exhibit more severe oxygen contamination and a transformation of broken carbon bonds from sp³- to sp²-hybridized forms, irrespective of whether embedded graphite particles are present.

Effects of varying Mn and Ni concentrations on the structure and piezoresistive properties of CuMnNi films deposited by magnetron sputtering with a segmented target were investigated. An increase in the Ni content refines the CuNi film grains, inducing an increase in defects such as internal micropores and a decrease in film density. At the same time, the positive piezoresistive coefficient of the film changes to negative. When 17.5 at.% Ni was added, the negative piezoresistive coefficient of the CuNi film was −2.0 × 10⁻⁴ GPa⁻¹. The doping of Ni has a weakening effect on the positive piezoresistive effect of the film. Adding Mn into Cu refines the film grains while increasing the film density. The surface roughness of the film decreases with the increase in Mn content. When the Mn content was 16.7 at.%, the piezoresistive coefficient reached the largest recorded value of 23.81 × 10⁻⁴ GPa⁻¹, and the film exhibited excellent repeatability in multiple piezoresistive tests. After the CuMn film with 16.7 at.% Mn was annealed at 400 °C for 2 h, the film grains grew slightly and the film residual stress decreased. The optimization of the film structure can reduce the scattering of electrons during transportation. The piezoresistive coefficient of the film was further improved to 35.78 × 10⁻⁴ GPa⁻¹.