Rémi Arras
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Rémi Arras has a total of 69 co-authors. Here are the top co-authors by number of shared publications:
- Lionel Calmels
CEMES
9 shared publications - Charles Paillard
University of Arkansas
5 shared publications - Dongzhe Li
Université de Toulouse
4 shared publications J. Gosteau
CEMES, Université de Toulouse, CNRS, UPS, 29 Rue Jeanne Marvig, F-31055 Toulouse, France
4 shared publications- Benedicte Warot-Fonrose
CEMES CNRS-UPR 8011, Université de Toulouse , 31055 Toulouse, France
3 shared publications L. Bellaiche
Physics Department and Institute for Nanoscience and Engineering University of Arkansas, Fayetteville, Arkansas 72701, USA
3 shared publications
Latest Publications
- 11 August 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (8)
Influence of atomic vacancies on the electronic and mechanical properties of two-dimensional AsBiSe 3 monolayers
- 11 August 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (8)
Influence of atomic vacancies on the electronic and mechanical properties of two-dimensional AsBiSe 3 monolayers
- 10 February 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (15) , 6427-6438
Exploration of the magnetocaloric effect in SrRuO 3 and BiFeO 3 /SrRuO 3 films via vacancy and interface design
Ru-deficient SrRuO 3 films and BiFeO 3 /SrRuO 3 heterostructures show tunable low-field magnetocaloric effects via vacancies and interface coupling. Ru vacancies induce dual FM transitions and higher entropy, while BiFeO 3 causes inverse MCE near T N .
- 10 February 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (15) , 6427-6438
Exploration of the magnetocaloric effect in SrRuO 3 and BiFeO 3 /SrRuO 3 films via vacancy and interface design
Ru-deficient SrRuO 3 films and BiFeO 3 /SrRuO 3 heterostructures show tunable low-field magnetocaloric effects via vacancies and interface coupling. Ru vacancies induce dual FM transitions and higher entropy, while BiFeO 3 causes inverse MCE near T N .
- 23 January 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (1)
Magnetoelectric properties at the Co/AlN(0001) interface
- 23 January 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (1)
Magnetoelectric properties at the Co/AlN(0001) interface
- 16 December 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (24)
Influence of Ge/Sb intermixing and doping on the electronic and transport properties of hexagonal Ge 2 Sb 2 Te 5 crystals
- 16 December 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (24)
Influence of Ge/Sb intermixing and doping on the electronic and transport properties of hexagonal Ge 2 Sb 2 Te 5 crystals
- 14 November 2025
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (47) , 16703-16710
A New Skyrmion Topological Transition Driven by Higher-Order Exchange Interactions in Janus MnSeTe
Two-dimensional (2D) van der Waals magnets offer a promising platform for pushing skyrmion technology to the single-layer limit with high tunability. While the Dzyaloshinskii-Moriya interaction (DMI) is often recognized as central to skyrmion formation, its stability, collapse, and topological transition in 2D materials remain largely unexplored. In particular, the effect of higher-order exchange interactions (HOI) on these phenomena is unknown. Here, using first-principles calculations and atomistic spin simulations, we report a new topological transition generated by HOI, which we term "ferric transition", in single-layer MnSeTe. Surprisingly, skyrmion stability and collapse remain largely unaffected by HOI due to the dominant role of the DMI near the saddle point, whereas the Bloch point is strongly modified, giving rise to this novel transition. Moreover, we predict that Janus MnSeTe exhibits remarkably high skyrmion energy barriers due to its strong DMI, among the highest reported for intrinsic 2D magnets.
- 14 November 2025
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (47) , 16703-16710
A New Skyrmion Topological Transition Driven by Higher-Order Exchange Interactions in Janus MnSeTe
Two-dimensional (2D) van der Waals magnets offer a promising platform for pushing skyrmion technology to the single-layer limit with high tunability. While the Dzyaloshinskii-Moriya interaction (DMI) is often recognized as central to skyrmion formation, its stability, collapse, and topological transition in 2D materials remain largely unexplored. In particular, the effect of higher-order exchange interactions (HOI) on these phenomena is unknown. Here, using first-principles calculations and atomistic spin simulations, we report a new topological transition generated by HOI, which we term "ferric transition", in single-layer MnSeTe. Surprisingly, skyrmion stability and collapse remain largely unaffected by HOI due to the dominant role of the DMI near the saddle point, whereas the Bloch point is strongly modified, giving rise to this novel transition. Moreover, we predict that Janus MnSeTe exhibits remarkably high skyrmion energy barriers due to its strong DMI, among the highest reported for intrinsic 2D magnets.
- 9 April 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (14)
Ferroelectric control of spin and orbital Rashba effects at the interface- 9 April 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (14)
Ferroelectric control of spin and orbital Rashba effects at the interface- 3 February 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (6)
Strain-induced magnetic moment variations at the picosecond timescale
- 3 February 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (6)
Strain-induced magnetic moment variations at the picosecond timescale
- Open Access
Spin and Orbital Rashba effects at the Ni/HfO$_2$ interface
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using electric gating is a promising route to low-energy consumption magnetic devices, including memories and logic gates. Synthetic multiferroics, composed of a ferroelectric in proximity to a magnet, stand out as a promising platform for such devices. Using a combination of $ab$ $initio$ simulations and transport calculations, we demonstrate that reversing the electric polarization modulates the interface magnetocrystalline anisotropy from in-plane to out-of-plane. This modulation compares favorably with recent reports obtained upon electromigration induced by ionic gating. In addition, we find that the current-driven spin and orbital densities at the interface can be modulated by about 50% and 30%, respectively. This giant modulation of the spin-charge and orbit-charge conversion efficiencies opens appealing avenues for voltage-controlled spin- and orbitronics devices.Open AccessSpin and Orbital Rashba effects at the Ni/HfO$_2$ interface
We predict the giant ferroelectric control of interfacial properties of Ni/HfO2, namely, (i) the magnetocrystalline anisotropy and (ii) the inverse spin and orbital Rashba effects. The reversible control of magnetic properties using electric gating is a promising route to low-energy consumption magnetic devices, including memories and logic gates. Synthetic multiferroics, composed of a ferroelectric in proximity to a magnet, stand out as a promising platform for such devices. Using a combination of $ab$ $initio$ simulations and transport calculations, we demonstrate that reversing the electric polarization modulates the interface magnetocrystalline anisotropy from in-plane to out-of-plane. This modulation compares favorably with recent reports obtained upon electromigration induced by ionic gating. In addition, we find that the current-driven spin and orbital densities at the interface can be modulated by about 50% and 30%, respectively. This giant modulation of the spin-charge and orbit-charge conversion efficiencies opens appealing avenues for voltage-controlled spin- and orbitronics devices. - 10 October 2024
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 6 (10) , 7286-7300
Unveiling and Optimizing Interface Properties of NiFe2O4/BaTiO3 Heterostructures
- 10 October 2024
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 6 (10) , 7286-7300
Unveiling and Optimizing Interface Properties of NiFe2O4/BaTiO3 Heterostructures
- 7 August 2024
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 128 (32) , 13620-13631
Preserving the Insulating Character and Tuning the Magnetic Properties through the Formation of Defects at NiFe2O4(001) Surfaces
- 7 August 2024
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 128 (32) , 13620-13631
Preserving the Insulating Character and Tuning the Magnetic Properties through the Formation of Defects at NiFe2O4(001) Surfaces