Pawel Hawrylak
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Pawel Hawrylak has a total of 92 co-authors. Here are the top co-authors by number of shared publications:
- Marek Korkusinski
University of Ottawa
19 shared publications - Alev Devrim Güçlü
İzmir Institute of Technology
8 shared publications - Pawel Potasz
Nicolaus Copernicus University
8 shared publications - Daniel Miravet
University of Ottawa
6 shared publications - Maciej Bieniek
Wrocław University of Science and Technology
6 shared publications - Hassan Allami
University of Ottawa
3 shared publications
Latest Publications
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 136 (8) , 086604
Bilayer Graphene Quantum Dots as a Quantum Simulator of Haldane Topological Quantum Matter
We demonstrate here that a chain of bilayer graphene quantum dots (BLGQDs) can realize topological quantum matter by effectively simulating a spin-1 chain that hosts the Haldane phase within a specific range of parameters. We describe a chain of BLGQDs with two electrons per dot using an atomistic tight-binding model combined with exact diagonalization to solve the interacting few-electron problem. Coulomb interactions and valley-mixing effects are treated within a single microscopic framework, allowing us to systematically investigate spin and valley polarization transitions as functions of interaction strength and external tuning parameters. We calculate the low energy states for single and double QDs as a function of the number of electrons, identifying regimes of highly correlated multielectron states. We confirm the presence of a spin-1 ground state for two electrons. Then, we explore two coupled QDs with four electrons and extend the analysis to QD arrays. Using a mapping of the BLGQD chain to an effective bilinear-biquadratic (BLBQ) spin model, we demonstrate that BLGQD arrays can work as a quantum simulator for one-dimensional spin chains with emergent many-body topological phases.
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 136 (8) , 086604
Bilayer Graphene Quantum Dots as a Quantum Simulator of Haldane Topological Quantum Matter
We demonstrate here that a chain of bilayer graphene quantum dots (BLGQDs) can realize topological quantum matter by effectively simulating a spin-1 chain that hosts the Haldane phase within a specific range of parameters. We describe a chain of BLGQDs with two electrons per dot using an atomistic tight-binding model combined with exact diagonalization to solve the interacting few-electron problem. Coulomb interactions and valley-mixing effects are treated within a single microscopic framework, allowing us to systematically investigate spin and valley polarization transitions as functions of interaction strength and external tuning parameters. We calculate the low energy states for single and double QDs as a function of the number of electrons, identifying regimes of highly correlated multielectron states. We confirm the presence of a spin-1 ground state for two electrons. Then, we explore two coupled QDs with four electrons and extend the analysis to QD arrays. Using a mapping of the BLGQD chain to an effective bilinear-biquadratic (BLBQ) spin model, we demonstrate that BLGQD arrays can work as a quantum simulator for one-dimensional spin chains with emergent many-body topological phases.
- Open Access
- 9 May 2025
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
- Vol. 11 (19) , eadu4696
Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe 2
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin-valley locking effect, in which carriers occupying the K and K ′ valleys of the reciprocal space must have opposite spins. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of WSe 2 to 1D via electrostatic confinement, we demonstrate that spin-valley locking and strong hole-hole interactions lead to a ferromagnetic state where hole transport is spin-valley polarized, even without an applied magnetic field. A massive Dirac fermion model in the Hartree-Fock approximation reveals that many-body hole-exchange interactions lead to this polarized ground-state. This observation opens the possibility of implementing a robust and stable valley-polarized system, essential in valleytronic applications.
- 9 May 2025
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
- Vol. 11 (19) , eadu4696
Open AccessValley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe 2
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between spin and valley degrees of freedom. Their strong spin-orbit interaction and broken inversion symmetry lead to the spin-valley locking effect, in which carriers occupying the K and K ′ valleys of the reciprocal space must have opposite spins. This effect is particularly strong for holes due to a larger spin-orbit gap in the valence band. By reducing the dimensionality of a monolayer of WSe 2 to 1D via electrostatic confinement, we demonstrate that spin-valley locking and strong hole-hole interactions lead to a ferromagnetic state where hole transport is spin-valley polarized, even without an applied magnetic field. A massive Dirac fermion model in the Hartree-Fock approximation reveals that many-body hole-exchange interactions lead to this polarized ground-state. This observation opens the possibility of implementing a robust and stable valley-polarized system, essential in valleytronic applications.
- 21 March 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (11)
Electrically tunable heterostructure-based quantum dot- 21 March 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 111 (11)
Electrically tunable heterostructure-based quantum dot- 4 December 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (23)
Theory of excitonic complexes in gated quantum dots- 4 December 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (23)
Theory of excitonic complexes in gated quantum dots- 27 February 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (7) , 075166
Atomistic theory of the moiré Hofstadter butterfly in magic-angle graphene
We present here a Hofstadter's butterfly spectrum for the magic-angle twisted bilayer graphene obtained using an ab initio-based multimillion-atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin splitting effects. A nanoribbon geometry is studied, and the quantum size effects for the sample widths up to 1 are analyzed both for a large energy window and for the flat band around the Fermi level. For sufficiently wide ribbons, where the role of the finite geometry is minimized, we obtain and plot the Hofstadter spectrum and identify the in-gap Chern numbers by counting the total number of chiral edge states crossing these gaps. Subsequently, we examine the Wannier diagrams to identify the insulating states at charge neutrality. We establish the presence of three types of electronic states: moiré, mixed, and conventional. These states describe both the bulk Landau levels and the edge states crossing gaps in the spectrum. The evolution of the bulk moiré flat band wave functions in the magnetic field is investigated, predicting a decay of the electronic density from the moiré centers as the magnetic flux increases. Furthermore, the spatial properties of the three types of edge states are studied, illustrating the evolution of their localization as a function of the nanoribbon momentum.- 27 February 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (7) , 075166
Atomistic theory of the moiré Hofstadter butterfly in magic-angle graphene
We present here a Hofstadter's butterfly spectrum for the magic-angle twisted bilayer graphene obtained using an ab initio-based multimillion-atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin splitting effects. A nanoribbon geometry is studied, and the quantum size effects for the sample widths up to 1 are analyzed both for a large energy window and for the flat band around the Fermi level. For sufficiently wide ribbons, where the role of the finite geometry is minimized, we obtain and plot the Hofstadter spectrum and identify the in-gap Chern numbers by counting the total number of chiral edge states crossing these gaps. Subsequently, we examine the Wannier diagrams to identify the insulating states at charge neutrality. We establish the presence of three types of electronic states: moiré, mixed, and conventional. These states describe both the bulk Landau levels and the edge states crossing gaps in the spectrum. The evolution of the bulk moiré flat band wave functions in the magnetic field is investigated, predicting a decay of the electronic density from the moiré centers as the magnetic flux increases. Furthermore, the spatial properties of the three types of edge states are studied, illustrating the evolution of their localization as a function of the nanoribbon momentum.- Open Access
- 9 August 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (16) , 2293
Majorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire
We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalization methods, we identify the presence of Majorana zero modes in the nanowire absorption spectra.
- 9 August 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (16) , 2293
Open AccessMajorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire
We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalization methods, we identify the presence of Majorana zero modes in the nanowire absorption spectra.
- Open Access
- 6 July 2023
- Published by MDPI AG in Preprints.org
Majorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire
We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalisation methods we identify the presence of Majorana Zero Modes in the nanowire absorption spectra.
- 6 July 2023
- Published by MDPI AG in Preprints.org
Open AccessMajorana Excitons in a Kitaev Chain of Semiconductor Quantum Dots in a Nanowire
We present here a theory of Majorana excitons, photo-excited conduction electron-valence band hole pairs, interacting with Majorana Fermions in a Kitaev chain of semiconductor quantum dots embedded in a nanowire. Using analytical tools and exact diagonalisation methods we identify the presence of Majorana Zero Modes in the nanowire absorption spectra.
- Open Access
- 1 December 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (23) , 4283
Edge States and Strain-Driven Topological Phase Transitions in Quantum Dots in Topological Insulators
We present here a theory of the electronic properties of quasi two-dimensional quantum dots made of topological insulators. The topological insulator is described by either eight band Hamiltonian or by a four-band Bernevig–Hughes–Zhang (BHZ) Hamiltonian. The trivial versus topological properties of the BHZ Hamiltonian are characterized by the different topologies that arise when mapping the in-plane wavevectors through the BHZ Hamiltonian onto a Bloch sphere. In the topologically nontrivial case, edge states are formed in the disc and square geometries of the quantum dot. We account for the effects of compressive strain in topological insulator quantum dots by means of the Bir–Pikus Hamiltonian. Tuning strain allows topological phase transitions between topological and trivial phases, which results in the vanishing of edge states from the energy gap. This may enable the design of a quantum strain sensor based on strain-driven transitions in HgTe topological insulator square quantum dots.- 1 December 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (23) , 4283
Open AccessEdge States and Strain-Driven Topological Phase Transitions in Quantum Dots in Topological Insulators
We present here a theory of the electronic properties of quasi two-dimensional quantum dots made of topological insulators. The topological insulator is described by either eight band Hamiltonian or by a four-band Bernevig–Hughes–Zhang (BHZ) Hamiltonian. The trivial versus topological properties of the BHZ Hamiltonian are characterized by the different topologies that arise when mapping the in-plane wavevectors through the BHZ Hamiltonian onto a Bloch sphere. In the topologically nontrivial case, edge states are formed in the disc and square geometries of the quantum dot. We account for the effects of compressive strain in topological insulator quantum dots by means of the Bir–Pikus Hamiltonian. Tuning strain allows topological phase transitions between topological and trivial phases, which results in the vanishing of edge states from the energy gap. This may enable the design of a quantum strain sensor based on strain-driven transitions in HgTe topological insulator square quantum dots. - Open Access
- 6 May 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (9) , 1582
Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach
Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS2, representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron–electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe–Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.
- 6 May 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (9) , 1582
Open AccessTheory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach
Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS2, representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron–electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe–Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.
- Open Access
- 27 January 2021
- Published by American Physical Society (APS) in Physical Review X
- Vol. 11 (1) , 019901
Erratum: Depolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots [Phys. Rev. X 8 , 041050 (2018)]
DOI: https://doi.org/10.1103/PhysRevX.11.019901
- 27 January 2021
- Published by American Physical Society (APS) in Physical Review X
- Vol. 11 (1) , 019901
Open AccessErratum: Depolarization of Electronic Spin Qubits Confined in Semiconductor Quantum Dots [Phys. Rev. X 8 , 041050 (2018)]
DOI: https://doi.org/10.1103/PhysRevX.11.019901