Haowen Zhong
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Haowen Zhong has a total of 14 co-authors. Here are the top co-authors by number of shared publications:
- Gennadiy Efimovich Remnev
National Research Tomsk Polytechnic University, Tomsk, Russia
2 shared publications - Shijian Zhang
School of Physics, Beihang University, Beijing 100191, China
2 shared publications - Xiao Yu
School of Physics, Beihang University, Beijing 100191, China
2 shared publications - Xiaoyun Le
Department of Physics, Beihang University, Beijing, CHINA
2 shared publications - Guoying Liang
Shandong Provincial Key Laboratory of Biophysics, Institute of Biophysics, Dezhou University, Dezhou 253023, China
1 shared publication - Jianhui Ren
School of Physics, Beihang University, Beijing 100191, China
1 shared publication
Latest Publications
- Open Access
Investigation of the Effects of an Intense Pulsed Ion Beam on the Surface Melting of IN718 Superalloy Prepared with Selective Laser Melting
Intense pulsed ion beam irradiation on IN718 superalloy prepared with selective laser melting as an after-treatment for surface melting is introduced. It is demonstrated that intense pulsed ion beam composed of protons and carbon ions, with a maximum current density of 200 A/cm2 and a pulse length of 80 ns, can induce surface melting and the surface roughness changes significantly due to the generation of micro-defects and the flow of the molten surface. Irradiation experiments and thermal field simulation revealed that the energy density of the ion beam plays a predominant role in the irradiation effect—with low energy density, the flow of molten surface is too weak to smooth the fluctuations on the surface. With high energy density, the surface can be effectively melted and smoothened while micro-defects, such as craters, may be generated and can be flattened by an increased number of pulses. The research verified that for the surface melting with intense pulsed ion beam (IPIB), higher energy density should be used for stronger surface fluidity and a greater pulse number is also required for the curing of surface micro-defects.
Open AccessInvestigation of the Effects of an Intense Pulsed Ion Beam on the Surface Melting of IN718 Superalloy Prepared with Selective Laser Melting
Intense pulsed ion beam irradiation on IN718 superalloy prepared with selective laser melting as an after-treatment for surface melting is introduced. It is demonstrated that intense pulsed ion beam composed of protons and carbon ions, with a maximum current density of 200 A/cm2 and a pulse length of 80 ns, can induce surface melting and the surface roughness changes significantly due to the generation of micro-defects and the flow of the molten surface. Irradiation experiments and thermal field simulation revealed that the energy density of the ion beam plays a predominant role in the irradiation effect—with low energy density, the flow of molten surface is too weak to smooth the fluctuations on the surface. With high energy density, the surface can be effectively melted and smoothened while micro-defects, such as craters, may be generated and can be flattened by an increased number of pulses. The research verified that for the surface melting with intense pulsed ion beam (IPIB), higher energy density should be used for stronger surface fluidity and a greater pulse number is also required for the curing of surface micro-defects.
- Open Access
Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation
The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.
Open AccessMolecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation
The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.