Giacomo Miceli
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Giacomo Miceli has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Alfredo Pasquarello
École Polytechnique Fédérale de Lausanne (EPFL)
5 shared publications Alfredo Pasquarello
Chaire de Simulation à l'Echelle Atomique (CSEA) Ecole Polytechnique Fédérale de Lausanne (EPFL) CH‐1015 Lausanne Switzerland
4 shared publications- Igor Reshetnyak
Chaire de Simulation à l'Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
1 shared publication - Jürg Hutter
University of Zürich
1 shared publication Stefano de Gironcoli
Scuola Internazionale Superiore di Studi Avanzati (SISSA) DEMOCRITOS Simulation Centre CNR-IOM via Bonomea 265 I-34136 Trieste Italy
1 shared publication- Wei Chen
Chaire de Simulation à l’Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
1 shared publication
Latest Publications
- 26 March 2018
- Published by American Physical Society (APS) in Physical Review B
- Vol. 97 (12) , 121112
Nonempirical hybrid functionals for band gaps and polaronic distortions in solids
We construct hybrid functionals in a nonempirical way by fixing the fraction of Fock exchange through either the long-range screening or the generalized Koopmans' condition applied to defect charge-transition levels. These functionals not only give band gaps of solids as accurate as state-of-the-art calculations, but are also capable of describing polaronic distortions. The Koopmans' condition is found to be satisfied across a series of defects, to the point of achieving accurate band gaps through a hydrogen probe. Extension to range-separated functionals demonstrates the robustness of the present approach.- 26 March 2018
- Published by American Physical Society (APS) in Physical Review B
- Vol. 97 (12) , 121112
Nonempirical hybrid functionals for band gaps and polaronic distortions in solids
We construct hybrid functionals in a nonempirical way by fixing the fraction of Fock exchange through either the long-range screening or the generalized Koopmans' condition applied to defect charge-transition levels. These functionals not only give band gaps of solids as accurate as state-of-the-art calculations, but are also capable of describing polaronic distortions. The Koopmans' condition is found to be satisfied across a series of defects, to the point of achieving accurate band gaps through a hydrogen probe. Extension to range-separated functionals demonstrates the robustness of the present approach.- 21 July 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 11 (7)
Migration of Mg and other interstitial metal dopants in GaN (Phys. Status Solidi RRL 7/2017)
- 21 July 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 11 (7)
Migration of Mg and other interstitial metal dopants in GaN (Phys. Status Solidi RRL 7/2017)
- 26 June 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 11 (7)
Migration of Mg and other interstitial metal dopants in GaN
- 26 June 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 11 (7)
Migration of Mg and other interstitial metal dopants in GaN
- Open Access
Migration of Mg and other interstitial metal dopants in GaN
The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant species. In all cases considered, the impurities diffuse like ions without any tendency of localizing charge. Li, Mg, and to some extent Na, diffuse almost isotropically in GaN, with average diffusion barriers of 1.1, 2.1, and 2.5 eV, respectively. Instead Be shows a marked anisotropy with energy barriers of 0.76 and 1.88 eV for diffusion paths perpendicular and parallel to the c-axis. The diffusion barrier generally increases with ionic charge and ionic radius, but their interplay is not trivial. The calculated migration barrier for Mg is consistent with the values estimated in a recent beta- emission channeling experiment.
Open AccessMigration of Mg and other interstitial metal dopants in GaN
The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant species. In all cases considered, the impurities diffuse like ions without any tendency of localizing charge. Li, Mg, and to some extent Na, diffuse almost isotropically in GaN, with average diffusion barriers of 1.1, 2.1, and 2.5 eV, respectively. Instead Be shows a marked anisotropy with energy barriers of 0.76 and 1.88 eV for diffusion paths perpendicular and parallel to the c-axis. The diffusion barrier generally increases with ionic charge and ionic radius, but their interplay is not trivial. The calculated migration barrier for Mg is consistent with the values estimated in a recent beta- emission channeling experiment.
- Open Access
Energetics of native point defects in GaN: a density-functional study
We study the formation energies of native point defects in GaN through density-functional theory. In our first-principles scheme, the band edges are positioned in accord with hybrid density functional calculations, thus yielding a band-gap in agreement with experiment. With respect to previous semilocal calculations, the calculated formation energies and charge transition levels are found to be significantly different in quantitative terms, while the overall qualitative trend remains similar. In Ga-rich conditions, the nitrogen vacancy corresponds to the most stable defect for all Fermi energies in the band gap, but its formation energy is too high to account for autodoping. Our calculations also indicate that the gallium vacancy does not play any compensating role in n-type GaN.
Open AccessEnergetics of native point defects in GaN: a density-functional study
We study the formation energies of native point defects in GaN through density-functional theory. In our first-principles scheme, the band edges are positioned in accord with hybrid density functional calculations, thus yielding a band-gap in agreement with experiment. With respect to previous semilocal calculations, the calculated formation energies and charge transition levels are found to be significantly different in quantitative terms, while the overall qualitative trend remains similar. In Ga-rich conditions, the nitrogen vacancy corresponds to the most stable defect for all Fermi energies in the band gap, but its formation energy is too high to account for autodoping. Our calculations also indicate that the gallium vacancy does not play any compensating role in n-type GaN.
- Open Access
Isobaric first-principles molecular dynamics of liquid water with nonlocal van der Waals interactions
We investigate the structural properties of liquid water at near ambient conditions using first-principles molecular dynamics simulations based on a semilocal density functional augmented with nonlocal van der Waals interactions. The adopted scheme offers the advantage of simulating liquid water at essentially the same computational cost of standard semilocal functionals. Applied to the water dimer and to ice Ih, we find that the hydrogen-bond energy is only slightly enhanced compared to a standard semilocal functional. We simulate liquid water through molecular dynamics in the NpH statistical ensemble allowing for fluctuations of the system density. The structure of the liquid departs from that found with a semilocal functional leading to more compact structural arrangements. This indicates that the directionality of the hydrogen-bond interaction has a diminished role as compared to the overall attractions, as expected when dispersion interactions are accounted for. This is substantiated through a detailed analysis comprising the study of the partial radial distribution functions, various local order indices, the hydrogen-bond network, and the selfdiffusion coefficient. The explicit treatment of the van der Waals interactions leads to an overall improved description of liquid water.
Open AccessIsobaric first-principles molecular dynamics of liquid water with nonlocal van der Waals interactions
We investigate the structural properties of liquid water at near ambient conditions using first-principles molecular dynamics simulations based on a semilocal density functional augmented with nonlocal van der Waals interactions. The adopted scheme offers the advantage of simulating liquid water at essentially the same computational cost of standard semilocal functionals. Applied to the water dimer and to ice Ih, we find that the hydrogen-bond energy is only slightly enhanced compared to a standard semilocal functional. We simulate liquid water through molecular dynamics in the NpH statistical ensemble allowing for fluctuations of the system density. The structure of the liquid departs from that found with a semilocal functional leading to more compact structural arrangements. This indicates that the directionality of the hydrogen-bond interaction has a diminished role as compared to the overall attractions, as expected when dispersion interactions are accounted for. This is substantiated through a detailed analysis comprising the study of the partial radial distribution functions, various local order indices, the hydrogen-bond network, and the selfdiffusion coefficient. The explicit treatment of the van der Waals interactions leads to an overall improved description of liquid water.
- 28 July 2016
- Published by American Chemical Society (ACS) in Journal of Chemical Theory and Computation
- Vol. 12 (8) , 3456-3462
Liquid Water through Density-Functional Molecular Dynamics: Plane-Wave vs Atomic-Orbital Basis Sets
We determine and compare structural, dynamical, and electronic properties of liquid water at near ambient conditions through density-functional molecular dynamics simulations, when using either plane-wave or atomic-orbital basis sets. In both frameworks, the electronic structure and the atomic forces are self-consistently determined within the same theoretical scheme based on a nonlocal density functional accounting for van der Waals interactions. The overall properties of liquid water achieved within the two frameworks are in excellent agreement with each other. Thus, our study supports that implementations with plane-wave or atomic-orbital basis sets yield equivalent results and can be used indiscriminately in study of liquid water or aqueous solutions.
- 28 July 2016
- Published by American Chemical Society (ACS) in Journal of Chemical Theory and Computation
- Vol. 12 (8) , 3456-3462
Liquid Water through Density-Functional Molecular Dynamics: Plane-Wave vs Atomic-Orbital Basis Sets
We determine and compare structural, dynamical, and electronic properties of liquid water at near ambient conditions through density-functional molecular dynamics simulations, when using either plane-wave or atomic-orbital basis sets. In both frameworks, the electronic structure and the atomic forces are self-consistently determined within the same theoretical scheme based on a nonlocal density functional accounting for van der Waals interactions. The overall properties of liquid water achieved within the two frameworks are in excellent agreement with each other. Thus, our study supports that implementations with plane-wave or atomic-orbital basis sets yield equivalent results and can be used indiscriminately in study of liquid water or aqueous solutions.
- 25 April 2016
- Published by American Physical Society (APS) in Physical Review B
- Vol. 93 (16) , 165207
Self-compensation due to point defects in Mg-doped GaN
Using hybrid density functional theory, we address point defects susceptible to cause charge compensation upon Mg doping of GaN. We determine the free energy of formation of the nitrogen vacancy and of several Mg-related defects. The entropic contribution as a function of temperature is determined within the quasiharmonic approximation. We find that the Mg interstitial shows a noticeably lower free energy of formation than the Mg substitutional to Ga in -type conditions. Therefore, the Mg impurity is amphoteric behaving like an acceptor when substitutional to Ga and like a double donor when accommodated in an interstitial position. The hybrid-functional results are then linked to experimental observations by solving the charge neutrality equations for semiconductor dominated by impurities. We show that a thermodynamic equilibrium model is unable to account for the experimental hole concentration as a function of Mg doping density, due to nitrogen vacancies and Mg interstitials acting as compensating donors. To explain the experimental result, which includes a dropoff of the hole concentration at high Mg densities, we thus resort to nonequilibrium models. We show that either nitrogen vacancies or Mg interstitials could be at the origin of the self-compensation mechanism. However, only the model based on interstitial Mg donors provides a natural mechanism to account for the sudden appearance of self-compensation. Indeed, the amphoteric nature of the Mg impurity leads to Fermi-level pinning and accounts for the observed dropoff of the hole concentration of GaN samples at high Mg doping. Our work suggests that current limitations in -type doping of GaN could be overcome by extrinsically controlling the Fermi energy during growth.- 25 April 2016
- Published by American Physical Society (APS) in Physical Review B
- Vol. 93 (16) , 165207
Self-compensation due to point defects in Mg-doped GaN
Using hybrid density functional theory, we address point defects susceptible to cause charge compensation upon Mg doping of GaN. We determine the free energy of formation of the nitrogen vacancy and of several Mg-related defects. The entropic contribution as a function of temperature is determined within the quasiharmonic approximation. We find that the Mg interstitial shows a noticeably lower free energy of formation than the Mg substitutional to Ga in -type conditions. Therefore, the Mg impurity is amphoteric behaving like an acceptor when substitutional to Ga and like a double donor when accommodated in an interstitial position. The hybrid-functional results are then linked to experimental observations by solving the charge neutrality equations for semiconductor dominated by impurities. We show that a thermodynamic equilibrium model is unable to account for the experimental hole concentration as a function of Mg doping density, due to nitrogen vacancies and Mg interstitials acting as compensating donors. To explain the experimental result, which includes a dropoff of the hole concentration at high Mg densities, we thus resort to nonequilibrium models. We show that either nitrogen vacancies or Mg interstitials could be at the origin of the self-compensation mechanism. However, only the model based on interstitial Mg donors provides a natural mechanism to account for the sudden appearance of self-compensation. Indeed, the amphoteric nature of the Mg impurity leads to Fermi-level pinning and accounts for the observed dropoff of the hole concentration of GaN samples at high Mg doping. Our work suggests that current limitations in -type doping of GaN could be overcome by extrinsically controlling the Fermi energy during growth.- 1 February 2014
- Published by Elsevier in Applied Surface Science
- Vol. 291, 16-19
Defect levels at GaAs/Al2O3 interfaces: As–As dimer vs. Ga dangling bond
- 1 February 2014
- Published by Elsevier in Applied Surface Science
- Vol. 291, 16-19
Defect levels at GaAs/Al2O3 interfaces: As–As dimer vs. Ga dangling bond