R. J. Martins
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
R. J. Martins has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
A. Vogt
Institute of Semiconductor Technology, Braunschweig University of Technology 2 , Braunschweig, Germany
1 shared publicationA. Waag
Institute of Semiconductor Technology, Braunschweig University of Technology 2 , Braunschweig, Germany
1 shared publicationC. Margenfeld
Institute of Semiconductor Technology, Braunschweig University of Technology 2 , Braunschweig, Germany
1 shared publication- Cleber Renato Mendonca
University of Sao Paulo CP 369
1 shared publication I. Manglano Clavero
Institute of Semiconductor Technology, Braunschweig University of Technology 2 , Braunschweig, Germany
1 shared publicationJ. P. Siqueira
Instituto de Física de São Carlos, Universidade de São Paulo 1 , Caixa Postal 369, 13560-970 São Carlos, SP, Brazil
1 shared publication
Latest Publications
- 26 June 2018
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 123 (24) , 243101
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption
We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent < 1).
- 26 June 2018
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 123 (24) , 243101
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption
We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourth-order (INBE ∝ Iexc4) and sub-linear (IYL ∝ Iexc0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent > 3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent < 1).