Simone Mazzucato
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Simone Mazzucato has a total of 49 co-authors. Here are the top co-authors by number of shared publications:
Thierry Amand
INSA, UPS, LPCNO, Université de Toulouse, Toulouse, France
4 shared publicationsXavier Marie
INSA, UPS, LPCNO, Université de Toulouse, Toulouse, France
4 shared publicationsAlexandre Arnoult
LAAS-CNRS, 7 avenue du colonel Roche, F-31400 Toulouse, France
2 shared publications- Alexandre Arnoult
LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France
2 shared publications Ayşe Erol
Department of Physics, Faculty of Science, Istanbul University, Vezneciler, Istanbul 34134, Turkey
2 shared publicationsChantal Fontaine
LAAS-CNRS, 7 avenue du colonel Roche, F-31400 Toulouse, France
2 shared publications
Latest Publications
- 4 April 2016
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 34 (11) , 2656-2662
Wideband Steady-State Model of a Strained InGaAsP MQW-SOA
A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.
- 4 April 2016
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 34 (11) , 2656-2662
Wideband Steady-State Model of a Strained InGaAsP MQW-SOA
A steady-state model of a strained MQW-SOA is described. Least-squares fitting of the model to experimental polarization resolved amplified spontaneous emission spectra is used to obtain difficult to measure model parameters such as the linebroadening lineshape parameters, Auger recombination, bandgap shrinkage, and intervalence band absorption coefficients. Well capture and escape processes are modeled by a carrier density dependent net escape time which accounts for barrier effects. Simulations and comparisons with experimental data are given which demonstrate the accuracy and versatility of the model.
- Open Access
- 1 April 2015
- Published by Institution of Engineering and Technology (IET) in IET Optoelectronics
- Vol. 9 (2) , 52-60
Gain, amplified spontaneous emission and noise figure of bulk InGaAs/InGaAsP/InP semiconductor optical amplifiers
Bulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers and grown on InP, was used as semiconductor optical amplifier active layer for polarisation insensitive amplification. The material bandstructure was obtained by solving the Lüttinger–Kohn Hamiltonian, including tetragonal strain contribution. Study of the InGaAs material gain was performed by taking into account the effect of k‐dependent bandgap shrinkage. The semiconductor optical amplifiers device amplified spontaneous emission and noise figure have been investigated as a function of temperature, carrier density and barrier height. Good agreement was obtained with the trends observed in the experimental characteristics. The authors show that a 100 nm bandwidth can be obtained with a difference between transverse electric and transverse magnetic emission kept constant, as required for polarisation independent amplifiers.
- 1 April 2015
- Published by Institution of Engineering and Technology (IET) in IET Optoelectronics
- Vol. 9 (2) , 52-60
Open AccessGain, amplified spontaneous emission and noise figure of bulk InGaAs/InGaAsP/InP semiconductor optical amplifiers
Bulk InGaAs layer under slight tensile strain, embedded in InGaAsP barriers and grown on InP, was used as semiconductor optical amplifier active layer for polarisation insensitive amplification. The material bandstructure was obtained by solving the Lüttinger–Kohn Hamiltonian, including tetragonal strain contribution. Study of the InGaAs material gain was performed by taking into account the effect of k‐dependent bandgap shrinkage. The semiconductor optical amplifiers device amplified spontaneous emission and noise figure have been investigated as a function of temperature, carrier density and barrier height. Good agreement was obtained with the trends observed in the experimental characteristics. The authors show that a 100 nm bandwidth can be obtained with a difference between transverse electric and transverse magnetic emission kept constant, as required for polarisation independent amplifiers.
- 4 November 2014
- Published by American Physical Society (APS) in Physical Review B
- Vol. 90 (19) , 195301
Anisotropic electronfactor as a probe of the electronic structure ofepilayersThe electron Landé factor is investigated both experimentally and theoretically in a series of strained epitaxial layers, for bismuth compositions up to . We measure via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of increases strongly with increasing Bi composition and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of . By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that is strongly anisotropic. We quantify the observed variation of with , and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure.- 4 November 2014
- Published by American Physical Society (APS) in Physical Review B
- Vol. 90 (19) , 195301
Anisotropic electronfactor as a probe of the electronic structure ofepilayersThe electron Landé factor is investigated both experimentally and theoretically in a series of strained epitaxial layers, for bismuth compositions up to . We measure via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of increases strongly with increasing Bi composition and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of . By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that is strongly anisotropic. We quantify the observed variation of with , and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure.- Open Access
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers
The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of $g^{*}$ increases strongly with increasing Bi composition $x$ and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of $g^{*}$. By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that $g^{*}$ is strongly anisotropic. We quantify the observed variation of $g^{*}$ with $x$, and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure.Open AccessInvestigation of the anisotropic electron g factor as a probe of the electronic structure of GaBi$_{x}$As$_{1-x}$/GaAs epilayers
The electron Land\'e g factor ($g^{*}$) is investigated both experimentally and theoretically in a series of GaBi$_{x}$As$_{1-x}$/GaAs strained epitaxial layers, for bismuth compositions up to $x = 3.8$%. We measure $g^{*}$ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of $g^{*}$ increases strongly with increasing Bi composition $x$ and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of $g^{*}$. By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that $g^{*}$ is strongly anisotropic. We quantify the observed variation of $g^{*}$ with $x$, and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure. - Open Access
- 17 March 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 123
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.
- 17 March 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 123
Open AccessMolecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.
- Open Access
- 18 February 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 84
Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes
Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x In x N y As1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling.
- 18 February 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 84
Open AccessExperimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1−xIn x N y As1−y/GaAs quantum well p-i-n photodiodes
Photocurrent oscillations, observed at low temperatures in lattice-matched Ga1−x In x N y As1−y /GaAs multiple quantum well (MQW) p-i-n samples, are investigated as a function of applied bias and excitation wavelength and are modelled with the aid of semiconductor simulation software. The oscillations appear only at low temperatures and have the highest amplitude when the optical excitation energy is in resonance with the GaInNAs bandgap. They are explained in terms of electron accumulation and the formation of high-field domains in the GaInNAs QWs as a result of the disparity between the photoexcited electron and hole escape rates from the QWs. The application of the external bias results in the motion of the high-field domain towards the anode where the excess charge dissipates from the well adjacent to anode via tunnelling.
- Open Access
- 13 January 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 22
Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs
We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.
- 13 January 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 22
Open AccessOptical gain in 1.3-μm electrically driven dilute nitride VCSOAs
We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.
- Open Access
- 13 January 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 19
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.
- 13 January 2014
- Published by Springer Nature in Discover Nano
- Vol. 9 (1) , 19
Open AccessLow-temperature photoluminescence study of exciton recombination in bulk GaAsBi
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.