Ce Sun

Two-dimensional (2D) materials provide a plethora of novel condensed matter physics and are the new playground in materials science, offering potentially vast applications. One of the critical hurdles for many 2D systems is the synthesis of these low-dimensional systems as well as the prediction and identification of new candidates. Herein, a self-assembly of a monolayer tellurene by bonding CdTe wafers is demonstrated for the first time. The conventional applications of wafer-bonding range from the production of microelectromechanical systems to the synthesis of lattice-mismatched multi-junction photovoltaics. Due to the heterogeneous materials that are typically employed, the bond-interface usually contains a thin amorphous layer or arrays of dislocations. Such an interface is thus itself inactive and in many cases has detrimental effects on the device. The new material phase stabilized in this work consists of an undulating monolayer of tellurium atoms covalently bonded to {111} Cd-terminated CdTe wafer surfaces. First-principles calculations and experimentally observed changes in the localized plasmon excitation energy indicate the clear rearrangement of the underlying band-structure suggesting a metallic character, bands showing linear dispersion, and a significant asymmetric spin-band splitting. The I–V characteristics show the presence of a highly conductive pathway that lowers the resistivity by three orders of magnitude, as compared to bulk CdTe, which can be attributed to the tellurium monolayer. The findings indicate that suitably chosen crystallographic wafer surfaces can act as structural templates allowing the production of exotic phases. The presently stabilized monolayer is an addition to the family of tellurene variants, providing new insights into the fundamental properties of this and other emerging 2D materials, while attracting attention to the unusual side of the wafer-bonding technology exemplified in this study.

Efficiency improvements in poly-CdTe can be achieved by fundamental understanding of the role of impurity atoms that can effectively passivate grain boundaries. In the present work, we investigated CdTe grain boundaries using TEM and SMIM, and studied effect of Se and Cu passivation on CdTe grain boundaries using first principles density functional theory (DFT) calculations. Se and Cu segregation to grain boundaries are thermodynamically feasible. Both Cu and Se can effectively reduce midgap states, but most improvement was achieved when Cu and Se are co-doped together, which is predicted to increase the PV efficiency of CdTe. The study we presented can be extended to dopant studies in other solar cell materials.

In microscopy employing electron and x-ray beams, advances in instrumentation and techniques have substantially improved the ability to image, track, and characterize materials at ever-higher resolution and precision. However, determining atomistic arrangements (i.e. configurations) from microscopy data remains a substantial challenge. Whether due to projection of a three-dimensional structure onto one or two dimensions as in pair distribution functions (PDF) and (scanning) transmission electron microscopy (STEM/TEM), or the reduction of a large number of matrix elements into an overall energy-dependent amplitude as in x-ray absorption spectroscopy (XAS) and electron energy loss spectroscopy (EELS), the result is that inversion of this mapping is time consuming, imprecise, and sometimes even fruitless, despite a large number of excellent tools which produces characterization data from input atomistic configurations, or further perform fitting to produce configurations from characterization data. The reasons for such difficulties include the extremely high dimensional search space for atomistic configurations, especially for nanostructures and defected or disordered solids.

A fundamental understanding of the role of dopants in electronic structure of polycrystalline CdTe may lead to efficiency improvements. In the present work, we investigated effect of Cl, P and S doping on CdTe grain boundaries using first principles density functional theory (DFT) calculations. In addition to already known Cl, P and S can segregate in grain boundaries and incorporation of these elements can effectively reduce midgap states to increase the photovoltaic efficiency of CdTe. The methodology we presented can be used to design other alloying elements to CdTe to improve photovoltaic efficiency towards reaching the theoretical limit.

A fundamental understanding of the role of vacancies, interstitials, dislocations and grain boundaries on the electronic structure of CdTe may lead to efficiency improvements. Atomistic-level characterization, including microscopy and first principles modeling, is crucial in developing such a fundamental understanding. In the present work, we built atomistic grain boundary and dislocation core models directly from the STEM images using image analysis methods and crystallographic information at the interface. Grain boundaries are modeled using first principles density functional theory (DFT) calculations. Electronic structures of large-scale grain models are also computed with an accurate hybrid functional (HSE06). We report the electronic density of states (DOS) and electrostatic potential profiles of different CdTe grain boundaries to understand charge carrier interactions. Thermodynamics of point defects and pairs of point defects that can exist on or near grain boundaries are studied and pertaining changes in electronic structure are reported. The implications of these electronic structure changes at grain boundaries on photovoltaic performance, and corresponding strategies to improve performance, are discussed.

Extended defects are of considerable importance in determining the electronic properties of semiconductors, especially in photovoltaics (PVs), due to their effects on electron-hole recombination. We employ model systems to study the effects of dislocations in CdTe by constructing grain boundaries using wafer bonding. Atomic-resolution scanning transmission electron microscopy (STEM) of a [1–10]/(110) 4.8° tilt grain boundary reveals that the interface is composed of three distinct types of Lomer dislocations. Geometrical phase analysis is used to map strain fields, while STEM and density functional theory (DFT) modeling determine the atomic structure at the interface. The electronic structure of the dislocation cores calculated using DFT shows significant mid-gap states and different charge-channeling tendencies. Cl-doping is shown to reduce the midgap states, while maintaining the charge separation effects. This report offers novel avenues for exploring grain boundary effects in CdTe-based solar cells by fabricating controlled bicrystal interfaces and systematic atomic-scale analysis.

Dislocation cores have long dominated the electronic and optical behaviors of semiconductor devices and detailed atomic characterization is required to further explore their effects. Miniaturization of semiconductor devices to nanometre scale also puts emphasis on a material's mechanical properties to withstand failure due to processing or operational stresses. Sessile junctions of dislocations provide barriers to propagation of mobile dislocations and may lead to work-hardening. The sessile Lomer–Cottrell and Hirth lock dislocations, two stable lowest elastic energy stair-rods, are studied in this paper. More specifically, using atomic resolution high-angle annular dark-field imaging and atomic-column-resolved X-ray spectrum imaging in an aberration-corrected scanning transmission electron microscope, dislocation core structures are examined in zinc-blende CdTe. A procedure is outlined for atomic scale analysis of dislocation junctions which allows determination of their identity with specially tailored Burgers circuits and also formation mechanisms of the polar core structures based on Thompson's tetrahedron adapted to reactions of polar dislocations as they appear in CdTe and other zinc-blende solids. Strain fields associated with the dislocations calculatedviageometric phase analysis are found to be diffuse and free of `hot spots' that reflect compact structures and low elastic energy of the pure-edge stair-rods.

The stacking of two-dimensional layered materials, such as semiconducting transition metal dichalcogenides (TMDs), insulating hexagonal boron nitride (hBN), and semimetallic graphene, has been theorized to produce tunable electronic and optoelectronic properties. Here we demonstrate the direct growth of MoS₂, WSe₂, and hBN on epitaxial graphene to form large-area van der Waals heterostructures. We reveal that the properties of the underlying graphene dictate properties of the heterostructures, where strain, wrinkling, and defects on the surface of graphene act as nucleation centers for lateral growth of the overlayer. Additionally, we show that the direct synthesis of TMDs on epitaxial graphene exhibits atomically sharp interfaces. Finally, we demonstrate that direct growth of MoS₂ on epitaxial graphene can lead to a 10³ improvement in photoresponse compared to MoS₂ alone.