Marius Volmer

Non-contact, highly accurate and fully automated measurement of the blood plasma viscosity using the optical transparency technique at a constant temperature of 37 °C.

The carbon nanowalls (CNWs) grown by Plasma-Enhanced CVD reveal differences in the magnetotransport properties depending on the synthesis parameters. In this paper, we report the influence of the deposition temperature, which produces variations of the disorder microstructure of the CNWs. Relative low disorder leads to the weak localization with the transition to weak antilocalization. Higher disorder generates positive Hopping mechanism in low field with a crossover to a diffusion transport by graphene nanocrystallites. The samples reveal a similitude of the isoline density of the MR at a low temperature (<50 K), explained in the context of the magnetization. This effect is independent of the number of defects. We can achieve a desirable amount of control over the MT properties changing the CNWs’ microstructure.

An exchanged-biased anisotropic magnetoresistance bridge sensor for low currents measurement is designed and implemented. The sensor has a simple construction (single mask) and is based on results from micromagnetic simulations. For increasing the sensitivity of the sensor, the magnetic field generated by the measurement current passing through the printed circuit board trace is determined through an analytical method and, for comparative analysis, finite elements method simulations are used. The sensor performance is experimentally tested with a demonstrator chip. Four case studies are considered in the analytical method: neglecting the thickness of the trace, dividing the thickness of the trace in several layers, and assuming a finite or very long conductive trace. Additionally, the influence of several adjacent traces in the sensor area is evaluated. The study shows that the analytical design method can be used for optimizing the geometric selectivity of a non-contacting magnetoresistive bridge sensor setup in single trace, differential, and multi-trace (planar coil) configurations. Further, the results can be applied for developing highly performant magnetoresistance sensors and optimizations for low field detection, small dimensions, and low costs.

The advantages of planar Hall effect (PHE) sensors—their thermal stability, very low detection limits, and high sensitivities—have supported a wide range of advanced applications such as nano-Tesla (nT) magnetometers, current sensing, or low magnetic moment detection in lab-on-a-chip devices. In this review we outline the background and implications of these PHE sensors, starting from fundamental physics through their technological evolution over the past few decades. Key parameters affecting the performance of these sensors, including noise from different sources, thermal stability, and magnetoresistance magnitudes are discussed. The progression of sensor geometries and junctions from disk, cross-to-bridge, ring, and ellipse configuration is also reviewed. The logical sequence of these structures from single magnetoresistive layers to bi-, tri-layers, and spin-valves is also covered. Research contributions to the development of these sensors are highlighted with a focus on microfluidics and flexible sensorics. This review serves as a comprehensive resource for scientists who wish to use PHE for fundamental research or to develop new applications and devices. The conclusions from this report will benefit the development, production, and performance evaluation of PHE-based devices and microfluidics, as well as set the stage for future advances.

Many applications require galvanic isolation between the circuit where the current is flowing and the measurement device. While for AC, the current transformer is the method of choice, in DC and, especially for low currents, other sensing methods must be used. This paper aims to provide a practical method of improving the sensitivity and linearity of a giant magnetoresistance (GMR)-based current sensor by adapting a set of design rules and methods easy to be implemented. Our approach utilizes a multi-trace current trace and a double differential GMR based detection system. This essentially constitutes a planar coil which would effectively increase the usable magnetic field detected by the GMR sensor. An analytical model is developed for calculating the magnetic field generated by the current in the GMR sensing area which showed a significant increase in sensitivity up to 13 times compared with a single biased sensor. The experimental setup can measure both DC and AC currents between 2–300 mA, with a sensitivity between 15.62 to 23.19 mV/mA, for biasing fields between 4 to 8 Oe with a detection limit of 100 μA in DC and 100 to 300 μA in AC from 10 Hz to 50 kHz. Because of the double differential setup, the detection system has a high immunity to external magnetic fields and a temperature drift of the offset of about −2.59 × 10⁻⁴ A/°C. Finally, this setup was adapted for detection of magnetic nanoparticles (MNPs) which can be used to label biomolecules in lab-on-a-chip applications and preliminary results are reported.

This paper presents the design and implementation of a high sensitivity giant magnetoresistance (GMR) based current sensor with a broad range of applications. The novelty of our approach consists in using a double differential measurement system, based on commercial GMR sensors, with an adjustable biasing system used to linearize the field response of the system. The work aims to act as a fully-operational proof of concept application, with an emphasis on the mode of operation and methods to improve the sensitivity and linearity of the measurement system. The implemented system has a broad current measurement range from as low as 75 mA in DC and 150 mA in AC up to 4 A by using a single setup. The sensor system is also very low power, consuming only 6.4 mW. Due to the way the sensors are polarized and positioned above the U-shaped conductive band through which the current to be measured is flowing, the differential setup offers a sensitivity of about between 0.0272 to 0.0307 V/A (signal from sensors with no amplifications), a high immunity to external magnetic fields, low hysteresis effects of 40 mA, and a temperature drift of the offset of about −2.59×10⁻⁴ A/°C. The system provides a high flexibility in designing applications where local fields with very low amplitudes must be detected. This setup can be redesigned for a wide range of applications, thus allowing further specific optimizations, which would provide an even greater accuracy and a significantly extended operation range.

The conditions of field and voltage for inducing steady state excitations in fully perpendicular magnetic tunnel junctions (pMTJs), adapted for memory applications, were numerically investigated by the resolution of the Landau-Lifshitz-Gilbert equation in the macrospin approach. Both damping-like and the field-like spin transfer torque terms were taken into account in the simulations, as well as the contribution of the second order uniaxial anisotropy term (K₂), which has been recently revealed in MgO-based pMTJs. An in-plane applied magnetic field balances the out of plane symmetry of the pMTJ and allows the signal detection. Using this model, we assessed the states of the free layer magnetization as a function of strength of K₂ and polar θ_H angle of the applied field (varied from 90° to 60°). There are two stable states, with the magnetization in-plane or out of plane of the layer, and two dynamic states with self-sustained oscillations, called in-plane precession state (IPP) or out of plane precession state (OPP). The IPP mode, with oscillation frequencies up to 7 GHz, appears only for positive voltages if θ_H = 90°. However, it shows a more complex distribution when the field is slightly tilted out of plane. The OPP mode is excited only if K₂ is considered and reaches a maximum oscillation frequency of 15 GHz. Large areas of dynamic states with high frequencies are obtained for strong values of the field-like torque and K₂, when applying a slightly tilted external field toward the out of plane direction. The non-zero temperature does not modify the phase diagrams but reduces drastically the power spectral density peak amplitudes.