Frederik Westergaard Østerberg
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Frederik Westergaard Østerberg has a total of 79 co-authors. Here are the top co-authors by number of shared publications:
- Mikkel Fougt Hansen
Department of Health Technology, Technical University of Denmark, DTU Health Tech, Building 345C, DK-2800, Kongens Lyngby, Denmark
17 shared publications - Giovanni Rizzi
Technical University of Denmark Department of Micro- and Nanotechnology DTU Nanotech, Building 345 East, DK-2800 Kongens Lyngby, Denmark
11 shared publications - Ole Hansen
Technical University of Denmark
11 shared publications - Dirch Hjorth Petersen
Technical University of Denmark
5 shared publications - Rebecca Stjernberg Bejhed
Department of Women’s and Children’s Health, Uppsala University, Uppsala, Sweden
4 shared publications Anders Dahl Henriksen
3 shared publications
Latest Publications
- 23 March 2025
- Published by Elsevier in Thin Solid Films
- Vol. 819
Lambert meets van der Pauw: Analytical expressions for fast numerical computation of dual configuration sheet resistance
- 23 March 2025
- Published by Elsevier in Thin Solid Films
- Vol. 819
Lambert meets van der Pauw: Analytical expressions for fast numerical computation of dual configuration sheet resistance
- Open Access
- 1 September 2021
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 92 (9) , 094711
3ω correction method for eliminating resistance measurement error due to Joule heating
Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials’ resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices’ critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.
- 1 September 2021
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 92 (9) , 094711
Open Access3ω correction method for eliminating resistance measurement error due to Joule heating
Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials’ resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices’ critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.
- Open Access
- 20 July 2018
- Published by Beilstein Institut in Beilstein Journal of Nanotechnology
- Vol. 9 (1) , 2032-2039
A variable probe pitch micro-Hall effect method
Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.
- 20 July 2018
- Published by Beilstein Institut in Beilstein Journal of Nanotechnology
- Vol. 9 (1) , 2032-2039
Open AccessA variable probe pitch micro-Hall effect method
Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier mobility.
- Open Access
- 1 May 2018
- Published by AIP Publishing in AIP Advances
- Vol. 8 (5) , 055206
Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes
We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.
- 1 May 2018
- Published by AIP Publishing in AIP Advances
- Vol. 8 (5) , 055206
Open AccessHall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes
We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.
- 3 October 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 120 (13) , 134303
Mesoscopic current transport in two-dimensional materials with grain boundaries: Four-point probe resistance and Hall effect
We have studied the behavior of micro four-point probe (M4PP) measurements on two-dimensional (2D) sheets composed of grains of varying size and grain boundary resistivity by Monte Carlo based finite element (FE) modelling. The 2D sheet of the FE model was constructed using Voronoi tessellation to emulate a polycrystalline sheet, and a square sample was cut from the tessellated surface. Four-point resistances and Hall effect signals were calculated for a probe placed in the center of the square sample as a function of grain density n and grain boundary resistivity . We find that the dual configuration sheet resistance as well as the resistance measured between opposing edges of the square sample have a simple unique dependency on the dimension-less parameter , where G0 is the sheet conductance of a grain. The value of the ratio between resistances measured in A- and B-configurations depends on the dimensionality of the current transport (i.e., one- or two-dimensional). At low grain density or low grain boundary resistivity, two-dimensional transport is observed. In contrast, at moderate grain density and high grain resistivity, one-dimensional transport is seen. Ultimately, this affects how measurements on defective systems should be interpreted in order to extract relevant sample parameters. The Hall effect response in all M4PP configurations was only significant for moderate grain densities and fairly large grain boundary resistivity.- 3 October 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 120 (13) , 134303
Mesoscopic current transport in two-dimensional materials with grain boundaries: Four-point probe resistance and Hall effect
We have studied the behavior of micro four-point probe (M4PP) measurements on two-dimensional (2D) sheets composed of grains of varying size and grain boundary resistivity by Monte Carlo based finite element (FE) modelling. The 2D sheet of the FE model was constructed using Voronoi tessellation to emulate a polycrystalline sheet, and a square sample was cut from the tessellated surface. Four-point resistances and Hall effect signals were calculated for a probe placed in the center of the square sample as a function of grain density n and grain boundary resistivity . We find that the dual configuration sheet resistance as well as the resistance measured between opposing edges of the square sample have a simple unique dependency on the dimension-less parameter , where G0 is the sheet conductance of a grain. The value of the ratio between resistances measured in A- and B-configurations depends on the dimensionality of the current transport (i.e., one- or two-dimensional). At low grain density or low grain boundary resistivity, two-dimensional transport is observed. In contrast, at moderate grain density and high grain resistivity, one-dimensional transport is seen. Ultimately, this affects how measurements on defective systems should be interpreted in order to extract relevant sample parameters. The Hall effect response in all M4PP configurations was only significant for moderate grain densities and fairly large grain boundary resistivity.- 12 October 2015
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 118 (14) , 143901
Characterization of magnetic tunnel junction test pads
We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method relies on four-point probe measurements performed with a range of different probe pitches and was originally developed for infinite samples. Using the method of images, we derive a modified CIPT model, which compensates for the insulating boundaries of a finite rectangular sample geometry. We measure on square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements as a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment.
- 12 October 2015
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 118 (14) , 143901
Characterization of magnetic tunnel junction test pads
We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method relies on four-point probe measurements performed with a range of different probe pitches and was originally developed for infinite samples. Using the method of images, we derive a modified CIPT model, which compensates for the insulating boundaries of a finite rectangular sample geometry. We measure on square tunnel junction pads with varying sizes and analyze the measured data using both the original and the modified CIPT model. Thus, we determine in which sample size range the modified CIPT model is needed to ensure validity of the extracted sample parameters, RA and TMR. In addition, measurements as a function of position on a square tunnel junction pad are used to investigate the sensitivity of the measurement results to probe misalignment.
- 24 July 2015
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 26 (9)
Characterization of positional errors and their influence on micro four-point probe measurements on a 100 nm Ru film
Thin-film sheet resistance measurements at high spatial resolution and on small pads are important and can be realized with micrometer-scale four-point probes. As a result of the small scale the measurements are affected by electrode position errors. We have characterized the electrode position errors in measurements on Ru thin film using an Au-coated 12-point probe. We show that the standard deviation of the static electrode position error is on the order of 5 nm, which significantly affects the results of single configuration measurements. Position-error-corrected dual-configuration measurements, however, are shown to eliminate the effect of position errors to a level limited either by electrical measurement noise or dynamic position errors. We show that the probe contact points remain almost static on the surface during the measurements (measured on an atomic scale) with a standard deviation of the dynamic position errors of 3 Å. We demonstrate how to experimentally distinguish between different sources of measurement errors, e.g. electrical measurement noise, probe geometry error as well as static and dynamic electrode position errors.
- 24 July 2015
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 26 (9)
Characterization of positional errors and their influence on micro four-point probe measurements on a 100 nm Ru film
Thin-film sheet resistance measurements at high spatial resolution and on small pads are important and can be realized with micrometer-scale four-point probes. As a result of the small scale the measurements are affected by electrode position errors. We have characterized the electrode position errors in measurements on Ru thin film using an Au-coated 12-point probe. We show that the standard deviation of the static electrode position error is on the order of 5 nm, which significantly affects the results of single configuration measurements. Position-error-corrected dual-configuration measurements, however, are shown to eliminate the effect of position errors to a level limited either by electrical measurement noise or dynamic position errors. We show that the probe contact points remain almost static on the surface during the measurements (measured on an atomic scale) with a standard deviation of the dynamic position errors of 3 Å. We demonstrate how to experimentally distinguish between different sources of measurement errors, e.g. electrical measurement noise, probe geometry error as well as static and dynamic electrode position errors.
- 16 July 2015
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 9 (7) , 7374-7382
Scalable DNA-Based Magnetic Nanoparticle Agglutination Assay for Bacterial Detection in Patient Samples
We demonstrate a nanoparticle-based assay for the detection of bacteria causing urinary tract infections in patient samples with a total assay time of 4 h. This time is significantly shorter than the current gold standard, plate culture, which can take several days depending on the pathogen. The assay is based on padlock probe recognition followed by two cycles of rolling circle amplification (RCA) to form DNA coils corresponding to the target bacterial DNA. The readout of the RCA products is based on optomagnetic measurements of the specific agglutination of DNA-bound magnetic nanoparticles (MNPs) using low-cost optoelectronic components from Blu-ray drives. We implement a detection approach, which relies on the monomerization of the RCA products, the use of the monomers to link and agglutinate two populations of MNPs functionalized with universal nontarget specific detection probes and on the introduction of a magnetic incubation scheme. This enables multiplex detection of Escherichia coli, Proteus mirabilis and Pseudomonas aeruginosa at clinically relevant concentrations, demonstrating a factor of 30 improvement in sensitivity compared to previous MNP-based detection schemes. Thanks to the universal probes, the same set of functionalized MNPs can be used to read out products from a multitude of RCA targets, making the approach truly scalable for parallel detection of multiple bacteria in a future integrated point of care molecular diagnostics system.
- 16 July 2015
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 9 (7) , 7374-7382
Scalable DNA-Based Magnetic Nanoparticle Agglutination Assay for Bacterial Detection in Patient Samples
We demonstrate a nanoparticle-based assay for the detection of bacteria causing urinary tract infections in patient samples with a total assay time of 4 h. This time is significantly shorter than the current gold standard, plate culture, which can take several days depending on the pathogen. The assay is based on padlock probe recognition followed by two cycles of rolling circle amplification (RCA) to form DNA coils corresponding to the target bacterial DNA. The readout of the RCA products is based on optomagnetic measurements of the specific agglutination of DNA-bound magnetic nanoparticles (MNPs) using low-cost optoelectronic components from Blu-ray drives. We implement a detection approach, which relies on the monomerization of the RCA products, the use of the monomers to link and agglutinate two populations of MNPs functionalized with universal nontarget specific detection probes and on the introduction of a magnetic incubation scheme. This enables multiplex detection of Escherichia coli, Proteus mirabilis and Pseudomonas aeruginosa at clinically relevant concentrations, demonstrating a factor of 30 improvement in sensitivity compared to previous MNP-based detection schemes. Thanks to the universal probes, the same set of functionalized MNPs can be used to read out products from a multitude of RCA targets, making the approach truly scalable for parallel detection of multiple bacteria in a future integrated point of care molecular diagnostics system.
- 1 April 2015
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 380, 209-214
Optimization of magnetoresistive sensor current for on-chip magnetic bead detection using the sensor self-field
- 1 April 2015
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 380, 209-214
Optimization of magnetoresistive sensor current for on-chip magnetic bead detection using the sensor self-field
- 1 April 2015
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 380, 215-220
On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor
- 1 April 2015
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 380, 215-220
On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor