Andras Kis
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Andras Kis has a total of 592 co-authors. Here are the top co-authors by number of shared publications:
Dumitru Dumcenco
Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL) 2 , CH-1015 Lausanne, Switzerland
22 shared publications- Kenji Watanabe
National Institute for Materials Science, Tsukuba, Japan
16 shared publications Aleksandra Radenovic
Institute of Bioengineering École Polytechnique Fédérale de Lausanne (EPFL) CH-1015 Lausanne Switzerland
14 shared publications- Aleksandra Radenovic
Institute of Bioengineering, School of Engineering, EPFL, Lausanne, Switzerland
14 shared publications Takashi Taniguchi
Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki 305-0044 Tsukuba Japan
13 shared publications- Ahmet Avsar
Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
12 shared publications
Latest Publications
- Open Access
- 22 October 2026
- Published by Springer Nature in Nature Communications
A van der Waals photon-ratchet for enhancing spin-defect emission and quantum sensing
Spin defects in two-dimensional materials are promising platforms for quantum information technologies and nanoscale sensing. The negatively charged boron vacancy ( $${\mathrm{V}}_{\mathrm{B}}^{-}$$ ) in hexagonal boron nitride (hBN) is particularly attractive due to its sensitivity to temperature, magnetic fields, and pressure, but its application is limited by intrinsically weak photoluminescence (PL). Here we demonstrate a van der Waals heterostructure that enhances the PL intensity of $${\mathrm{V}}_{\mathrm{B}}^{-}$$ by up to 45× at 4 Kelvin while preserving compatibility with ultrathin optoelectronic platforms. A quasi type-I band alignment at the PbI 2 –defected hBN interface facilitates efficient interlayer coupling to the defect, and strong spectral overlap supports fluorescence resonance energy transfer. Ab initio calculations indicate that this coupling enables a photon-ratcheting mechanism, in which optical absorption in PbI 2 generates a nonlinear polarization that drives $${\mathrm{V}}_{\mathrm{B}}^{-}$$ excitation. This process is compatible with interlayer energy transfer while maintaining minimal electronic and spin hybridization and preserving optically detected magnetic resonance (ODMR) contrast. The heterostructure further exhibits improved sensitivity to external magnetic fields. These results establish a route for the enhancement of defect emission via interlayer optical coupling and introduce a general materials strategy for amplifying weak quantum defect signals in nanomaterials.- 22 October 2026
- Published by Springer Nature in Nature Communications
Open AccessA van der Waals photon-ratchet for enhancing spin-defect emission and quantum sensing
Spin defects in two-dimensional materials are promising platforms for quantum information technologies and nanoscale sensing. The negatively charged boron vacancy ( $${\mathrm{V}}_{\mathrm{B}}^{-}$$ ) in hexagonal boron nitride (hBN) is particularly attractive due to its sensitivity to temperature, magnetic fields, and pressure, but its application is limited by intrinsically weak photoluminescence (PL). Here we demonstrate a van der Waals heterostructure that enhances the PL intensity of $${\mathrm{V}}_{\mathrm{B}}^{-}$$ by up to 45× at 4 Kelvin while preserving compatibility with ultrathin optoelectronic platforms. A quasi type-I band alignment at the PbI 2 –defected hBN interface facilitates efficient interlayer coupling to the defect, and strong spectral overlap supports fluorescence resonance energy transfer. Ab initio calculations indicate that this coupling enables a photon-ratcheting mechanism, in which optical absorption in PbI 2 generates a nonlinear polarization that drives $${\mathrm{V}}_{\mathrm{B}}^{-}$$ excitation. This process is compatible with interlayer energy transfer while maintaining minimal electronic and spin hybridization and preserving optically detected magnetic resonance (ODMR) contrast. The heterostructure further exhibits improved sensitivity to external magnetic fields. These results establish a route for the enhancement of defect emission via interlayer optical coupling and introduce a general materials strategy for amplifying weak quantum defect signals in nanomaterials. - Open Access
- 29 July 2026
- Published by Springer Nature in Nature Materials
- Vol. 25 (11) , 1968-1974
Fast interlayer exciton drift driven by lattice reconstruction in a van der Waals heterobilayer
Modern short-scale information transmission mainly relies on dissipative charge transport, with electrons scattered by defects and phonons, leading to significant power losses. By contrast, excitons—charge-neutral quasiparticles—offer a playground for electro-optical energy-efficient information transduction and processing owing to their extended lifetimes, charge neutrality and efficient electrostatic control. In this work, we report the observation of fast exciton transport in a van der Waals heterostructure over distances exceeding 10 µm, constrained only by the heterostructure finite size. We observe the presence of excitonic potential ramps that leads to long-range rapid exciton drift and enables rapid dilution of the initial exciton population. Our measurements reveal fast exciton propagation, with interlayer exciton drift velocities of approximately 2.66 × 10 4 m s −1 , within a transport regime that remains robust across a wide range of exciton densities and temperatures up to 150 K. Our work opens avenues for the development of high-speed, energy-efficient excitonic devices, such as field-effect switches and modulators.
- 29 July 2026
- Published by Springer Nature in Nature Materials
- Vol. 25 (11) , 1968-1974
Open AccessFast interlayer exciton drift driven by lattice reconstruction in a van der Waals heterobilayer
Modern short-scale information transmission mainly relies on dissipative charge transport, with electrons scattered by defects and phonons, leading to significant power losses. By contrast, excitons—charge-neutral quasiparticles—offer a playground for electro-optical energy-efficient information transduction and processing owing to their extended lifetimes, charge neutrality and efficient electrostatic control. In this work, we report the observation of fast exciton transport in a van der Waals heterostructure over distances exceeding 10 µm, constrained only by the heterostructure finite size. We observe the presence of excitonic potential ramps that leads to long-range rapid exciton drift and enables rapid dilution of the initial exciton population. Our measurements reveal fast exciton propagation, with interlayer exciton drift velocities of approximately 2.66 × 10 4 m s −1 , within a transport regime that remains robust across a wide range of exciton densities and temperatures up to 150 K. Our work opens avenues for the development of high-speed, energy-efficient excitonic devices, such as field-effect switches and modulators.
- Open Access
- 19 May 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (7) , 766-774
Non-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide
- 19 May 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (7) , 766-774
Open AccessNon-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide
- Open Access
- 7 April 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (15) , 12008-12022
Large-Scale Integration of Experimental and Computational Data for 2D Materials
The past decade has seen rapid growth in the number of experimentally realized two-dimensional (2D) materials with diverse chemical and physical properties. However, information on their crystal structure, synthesis routes, and measured or predicted properties remains scattered across thousands of publications. Here, we consolidate this fragmented knowledge by establishing X2DB─an open infrastructure that integrates experimental and computational data on 2D materials. Using extensive literature mining and direct community uploads, we identify 370 unique 2D materials that have been realized in monolayer or few-layer form and link them to their digital counterparts in computational databases, enabling consistent ab initio characterization of their properties across monolayer, bilayer, and bulk forms. We describe the structure and content of the database, highlight its support for community uploads, illustrate how it can be used to generate scientific insight, and introduce a hierarchical classification of the known set of 2D materials. Our work supports the integration and cross-fertilization of experimental and theoretical knowledge and contributes to data-driven and predictive synthesis of 2D materials.
- 7 April 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (15) , 12008-12022
Open AccessLarge-Scale Integration of Experimental and Computational Data for 2D Materials
The past decade has seen rapid growth in the number of experimentally realized two-dimensional (2D) materials with diverse chemical and physical properties. However, information on their crystal structure, synthesis routes, and measured or predicted properties remains scattered across thousands of publications. Here, we consolidate this fragmented knowledge by establishing X2DB─an open infrastructure that integrates experimental and computational data on 2D materials. Using extensive literature mining and direct community uploads, we identify 370 unique 2D materials that have been realized in monolayer or few-layer form and link them to their digital counterparts in computational databases, enabling consistent ab initio characterization of their properties across monolayer, bilayer, and bulk forms. We describe the structure and content of the database, highlight its support for community uploads, illustrate how it can be used to generate scientific insight, and introduce a hierarchical classification of the known set of 2D materials. Our work supports the integration and cross-fertilization of experimental and theoretical knowledge and contributes to data-driven and predictive synthesis of 2D materials.
- Open Access
- 10 February 2026
- Published by Wiley in Advanced Science
- Vol. 13 (20) , e22850
Engineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies
Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics. Here, we present a new approach where strain in 2D materials is already introduced directly during their growth on grayscale‐patterned topographies instead of flat surfaces. Both strain levels and orientations are deterministically engineered by controlling grayscale surface contour lengths through thermal expansion mismatches in nanostructured stacks, where the conformally grown and firmly attached 2D material is forced to match the underlying morphology change during cooling. With this method, we experimentally demonstrate precise control of localized tensile strain from 0 to 0.5% in grown MoS 2 monolayer along both uni‐ and multiaxial directions, while higher strain levels are shown to be theoretically possible. This strain‐engineered growth of 2D material films directly on the target substrates is a generic and adaptable approach to various combinations of grayscale‐thin‐film/substrates and eliminates all the transfer‐related limitations of previous approaches, thus paving the way for integrating strained 2D materials into next‐generation nanoelectronics.
- 10 February 2026
- Published by Wiley in Advanced Science
- Vol. 13 (20) , e22850
Open AccessEngineered Strain in 2D Materials by Direct Growth on Deterministically Patterned Grayscale Topographies
Strain is a proven technique for modifying the bandgap and enhancing carrier mobility in 2D materials. Most current strain engineering techniques rely on the post‐growth transfer of these atomically thin materials from growth substrates to target surfaces, limiting their integration into nanoelectronics. Here, we present a new approach where strain in 2D materials is already introduced directly during their growth on grayscale‐patterned topographies instead of flat surfaces. Both strain levels and orientations are deterministically engineered by controlling grayscale surface contour lengths through thermal expansion mismatches in nanostructured stacks, where the conformally grown and firmly attached 2D material is forced to match the underlying morphology change during cooling. With this method, we experimentally demonstrate precise control of localized tensile strain from 0 to 0.5% in grown MoS 2 monolayer along both uni‐ and multiaxial directions, while higher strain levels are shown to be theoretically possible. This strain‐engineered growth of 2D material films directly on the target substrates is a generic and adaptable approach to various combinations of grayscale‐thin‐film/substrates and eliminates all the transfer‐related limitations of previous approaches, thus paving the way for integrating strained 2D materials into next‐generation nanoelectronics.
- Open Access
- 21 December 2025
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Epitaxial growth of wafer-scale 2D superconductor single crystals by metal-organic chemical vapor deposition
Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are garnering significant attention for their ability to enhance device performance when used as 2D contacts with semiconducting 2D materials, as well as for their intriguing low-temperature properties, including superconductivity, magnetism, and charge density waves (CDWs). However, the advancement of both fundamental studies and practical applications has been hindered by challenges in synthesizing high-quality, large-area materials. In this work, we report the epitaxial growth of wafer-scale 2D superconducting TMDC single-crystal multilayers by metal–organic chemical vapor deposition (MOCVD). Our NbS2 multilayer films achieve high wafer-scale uniformity and single crystallinity of 2H phase, as confirmed by AFM, Raman spectroscopy, SHG mapping, LEED and STEM measurements. This is enabled by a dual-precursor strategy that drives self-templated concurrent epitaxy on lattice-matched sapphire, which is further supported by a kinetic growth model. Devices fabricated from the NbS2 film demonstrate superconductivity below a transition temperature of 3 K, consistent with a Berezinskii-Kosterlitz-Thouless (BKT) type superconducting phase transition, with an impressive yield of 95.1% and a resistance variation of only 12%. Additionally, we demonstrate the wafer-scale growth of superconducting NbSe2 films (Tc = 5 K) via MOCVD. Our work underscores a versatile and scalable approach for synthesizing wafer-scale 2D superconductor single crystals, which is essential for their integration into next-generation TMDC-based electronic devices.
- 21 December 2025
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Open AccessEpitaxial growth of wafer-scale 2D superconductor single crystals by metal-organic chemical vapor deposition
Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are garnering significant attention for their ability to enhance device performance when used as 2D contacts with semiconducting 2D materials, as well as for their intriguing low-temperature properties, including superconductivity, magnetism, and charge density waves (CDWs). However, the advancement of both fundamental studies and practical applications has been hindered by challenges in synthesizing high-quality, large-area materials. In this work, we report the epitaxial growth of wafer-scale 2D superconducting TMDC single-crystal multilayers by metal–organic chemical vapor deposition (MOCVD). Our NbS2 multilayer films achieve high wafer-scale uniformity and single crystallinity of 2H phase, as confirmed by AFM, Raman spectroscopy, SHG mapping, LEED and STEM measurements. This is enabled by a dual-precursor strategy that drives self-templated concurrent epitaxy on lattice-matched sapphire, which is further supported by a kinetic growth model. Devices fabricated from the NbS2 film demonstrate superconductivity below a transition temperature of 3 K, consistent with a Berezinskii-Kosterlitz-Thouless (BKT) type superconducting phase transition, with an impressive yield of 95.1% and a resistance variation of only 12%. Additionally, we demonstrate the wafer-scale growth of superconducting NbSe2 films (Tc = 5 K) via MOCVD. Our work underscores a versatile and scalable approach for synthesizing wafer-scale 2D superconductor single crystals, which is essential for their integration into next-generation TMDC-based electronic devices.
- Open Access
- 28 November 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 10710
Electrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer
Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.
- 28 November 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 10710
Open AccessElectrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer
Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.
- Open Access
Electrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer
Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.
Open AccessElectrically tunable ultrafast dynamics and interactions of hybrid excitons in a 2D semiconductor bilayer
Extended efforts have been devoted to the study of strongly-interacting excitons and their dynamics, towards macroscopic quantum states of matter such as Bose-Einstein condensates of excitons and polaritons. Momentum-direct layer-hybridized excitons in transition metal dichalcogenides have attracted considerable attention due to their high oscillator strength and dipolar nature. However, the tunability of their interactions and dynamics remains unexplored. Here, we achieve an unprecedented control over the nonlinear properties of dipolar layer-hybridized excitons in an electrically gated van der Waals homobilayer monitored by transient optical spectroscopy. By applying a vertical electric field, we reveal strong Coulomb interactions of dipolar hybrid excitons, leading to opposite density-dependent energy shifts of the two main hybrid species based on their dipolar orientation, together with a strongly enhanced optical saturation of their absorption. Furthermore, by electrically tuning the interlayer tunneling between the hybridized carriers, we significantly extend the formation time of hybrid excitons, while simultaneously increasing their decay times. Our findings have implications for the search on quantum blockade and condensation of excitons and dipolaritons in two-dimensional materials.
- Open Access
- 17 July 2025
- Published by Springer Nature in Nature Nanotechnology
- Vol. 20 (10) , 1412-1418
Enhancing interlayer exciton dynamics by coupling with monolithic cavities via the field-induced Stark effect
Optical microcavities provide a powerful and versatile framework for manipulating the dynamics of photonic emission from optically active materials through light recirculation. Spatially indirect interlayer excitons (IXs) exhibit broad tunability of their emission energy via the quantum-confined Stark effect. However, the electrical tunability of IXs has not been exploited in cavity-coupled systems until now. Here we modulate the detuning between the cavity resonance and the IX emission in a monolithic Fabry–Perot cavity using an applied vertical electric field. We reveal a simultaneous enhancement of both the emission intensity and lifetime of weakly coupled IXs when in resonance with the optical cavity owing to strong Purcell inhibition and cavity transparency effects. We further investigate the tunable momentum dispersion of coupled IXs through back-focal-plane imaging and explain our results by the cavity coupling of IX transition dipoles as supported by theoretical modelling. Our work demonstrates an integration effort enabling the versatile tuning of highly interacting IXs within monolithic cavities, revealing the attractiveness of electrically tunable IX cavity coupling for both fundamental studies towards exciton condensate manipulation and future integration of excitonic devices.
- 17 July 2025
- Published by Springer Nature in Nature Nanotechnology
- Vol. 20 (10) , 1412-1418
Open AccessEnhancing interlayer exciton dynamics by coupling with monolithic cavities via the field-induced Stark effect
Optical microcavities provide a powerful and versatile framework for manipulating the dynamics of photonic emission from optically active materials through light recirculation. Spatially indirect interlayer excitons (IXs) exhibit broad tunability of their emission energy via the quantum-confined Stark effect. However, the electrical tunability of IXs has not been exploited in cavity-coupled systems until now. Here we modulate the detuning between the cavity resonance and the IX emission in a monolithic Fabry–Perot cavity using an applied vertical electric field. We reveal a simultaneous enhancement of both the emission intensity and lifetime of weakly coupled IXs when in resonance with the optical cavity owing to strong Purcell inhibition and cavity transparency effects. We further investigate the tunable momentum dispersion of coupled IXs through back-focal-plane imaging and explain our results by the cavity coupling of IX transition dipoles as supported by theoretical modelling. Our work demonstrates an integration effort enabling the versatile tuning of highly interacting IXs within monolithic cavities, revealing the attractiveness of electrically tunable IX cavity coupling for both fundamental studies towards exciton condensate manipulation and future integration of excitonic devices.
- Open Access
- 10 January 2025
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 19 (2) , 2518-2528
Polarization-Dependent Plasmon-Induced Doping and Strain Effects in MoS2 Monolayers on Gold Nanostructures
Monolayers of transition-metal dichalcogenides, such as MoS2, have attracted significant attention for their exceptional electronic and optical properties, positioning them as ideal candidates for advanced optoelectronic applications. Despite their strong excitonic effects, the atomic-scale thickness of these materials limits their light absorption efficiency, necessitating innovative strategies to enhance light-matter interactions. Plasmonic nanostructures offer a promising solution to overcome those challenges by amplifying the electromagnetic field and also introducing other mechanisms, such as hot electron injection. In this study, we investigate the vibrational and optical properties of MoS2 monolayer deposited on gold substrates and gratings, emphasizing the role of strain and plasmonic effects using conventional spectroscopic techniques. Our results reveal significant biaxial strain in the supported regions and a uniaxial strain gradient in the suspended ones, showing a strain-induced exciton and carrier funneling effect toward the center of the nanogaps. Moreover, we observed an additional polarization-dependent doping mechanism in the suspended regions. This effect was attributed to localized surface plasmons generated within the slits, as confirmed by numerical simulations, which may decay nonradiatively into hot electrons and be injected into the monolayer. Photoluminescence measurements further demonstrated a polarization-dependent trion-to-A exciton intensity ratio, supporting the hypothesis of additional plasmon-induced doping. These findings provide a comprehensive understanding of the strain-mediated funneling effects and plasmonic interactions in hybrid MoS2/Au nanostructures, offering valuable insights for developing high-efficiency photonic devices and quantum technologies, including polarization-sensitive detectors and excitonic circuits.
- 10 January 2025
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 19 (2) , 2518-2528
Open AccessPolarization-Dependent Plasmon-Induced Doping and Strain Effects in MoS2 Monolayers on Gold Nanostructures
Monolayers of transition-metal dichalcogenides, such as MoS2, have attracted significant attention for their exceptional electronic and optical properties, positioning them as ideal candidates for advanced optoelectronic applications. Despite their strong excitonic effects, the atomic-scale thickness of these materials limits their light absorption efficiency, necessitating innovative strategies to enhance light-matter interactions. Plasmonic nanostructures offer a promising solution to overcome those challenges by amplifying the electromagnetic field and also introducing other mechanisms, such as hot electron injection. In this study, we investigate the vibrational and optical properties of MoS2 monolayer deposited on gold substrates and gratings, emphasizing the role of strain and plasmonic effects using conventional spectroscopic techniques. Our results reveal significant biaxial strain in the supported regions and a uniaxial strain gradient in the suspended ones, showing a strain-induced exciton and carrier funneling effect toward the center of the nanogaps. Moreover, we observed an additional polarization-dependent doping mechanism in the suspended regions. This effect was attributed to localized surface plasmons generated within the slits, as confirmed by numerical simulations, which may decay nonradiatively into hot electrons and be injected into the monolayer. Photoluminescence measurements further demonstrated a polarization-dependent trion-to-A exciton intensity ratio, supporting the hypothesis of additional plasmon-induced doping. These findings provide a comprehensive understanding of the strain-mediated funneling effects and plasmonic interactions in hybrid MoS2/Au nanostructures, offering valuable insights for developing high-efficiency photonic devices and quantum technologies, including polarization-sensitive detectors and excitonic circuits.