Fei Xue

Exciton quantum phases of Bose-Einstein condensation, exciton insulators, and superfluidity are largely governed by exciton-exciton interactions. Manipulating these interactions has sparked tremendous efforts to investigate quantum-confined excitons in two-dimensional (2D) semiconductors. In typical 2D exciton systems, however, strong dipolar interactions can be accessible at the cost of optical deactivation with significantly reduced oscillator strengths. Here we observe an emergent dipolar exciton with strong interactions in 2D perovskites with a surface lattice reconstruction. To unravel the microscopic nature of this exciton, we synergistically combine extensive optical spectroscopy, quantum-confined Stark effect, and density functional theory calculations. The dipolar exciton features dominant in-plane (IP) transition dipole moments, alongside coexisting out-of-plane (OP) electric dipole moments, giving rise to an exciton-exciton interaction strength of 38.1 ± 6.7 μeV·μm² as one of the highest reported to date. The observation promises great potential to explore quantum phenomena and optoelectronic applications based on strongly interacting dipolar excitons in 2D semiconductors.

The interplay between topology and superconductivity generated great interest in condensed matter physics. Here, we unveil an unconventional two-dimensional superconducting state in the Dirac nodal line semimetal ZrAs₂ which is exclusively confined to the top and bottom surfaces within the crystal’s ab plane. As a remarkable consequence, we present the first clear evidence of a Berezinskii–Kosterlitz–Thouless (BKT) transition occurring solely on a material’s surface—specifically, ZrAs₂—unlike the inconsistent reports on PtBi₂, CaAgP, and CaAg₁₋ₓPdₓP. Furthermore, we find that these same surfaces also host a two-dimensional van Hove singularity near the Fermi energy. This leads to enhanced electronic correlations that contribute to the stabilization of superconductivity at the surface of ZrAs₂. The`surface-confined nature of the van Hove singularity and associated superconductivity, realized for the first time, allows exploring the interplay between low-dimensional quantum topology and superconductivity in a bulk material without resorting to the superconducting proximity effect.

Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin‐orbit torque (SOT) and manipulate the magnetization with their unique topological surface states (TSS) with ultrahigh efficiency. Here, efficient SOT switching of a hard MTI, V‐doped (Bi,Sb)₂Te₃ (VBST), with a large coercive field that can prevent the influence of an external magnetic field, is demonstrated. A giant switched anomalous Hall resistance of 9.2 kΩ is realized, among the largest of all SOT systems, which makes the Hall channel a good readout and eliminates the need to fabricate complicated magnetic tunnel junction (MTJ) structures. The SOT switching current density can be reduced to 2.8 × 10⁵ A cm⁻², indicating its high efficiency. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge‐state‐mediated to surface‐state‐mediated transport, thus enhancing the SOT effective field to (1.56 ± 0.12) × 10⁻⁶ T A⁻¹ cm² and the interfacial charge‐to‐spin conversion efficiency to 3.9 ± 0.3 nm⁻¹. The findings establish VBST as an extraordinary candidate for energy‐efficient magnetic memory devices.

Ferromagnetic insulators (FMIs) have widespread applications in microwave devices, magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic devices. However, the sparsity of the available high-temperature FMIs has led to the quest for a robust and controllable insulating ferromagnetic state. Here, we present compelling evidence of modulation of the magnetic ground state in a SrCoO2.5 (SCO) thin film via strain engineering. The SCO system is an antiferromagnetic insulator with a Neel temperature, TN, of ∼550 K. Applying in-plane compressive strain, the SCO thin film reveals an insulating ferromagnetic state with an extraordinarily high Curie temperature, TC, of ∼750 K. The emerged ferromagnetic state is associated with charge-disproportionation (CD) and spin-state-disproportionation (SSD), involving high-spin Co2+ and low-spin Co4+ ions. The density functional theory calculation also produces an insulating ferromagnetic state in the strained SCO system, consistent with the CD and SSD, which is associated with the structural ordering in the system. Transpiring the insulating ferromagnetic state through modulating the electronic correlation parameters via strain engineering in the SCO thin film will have a significant impact in large areas of modern electronic and spintronic applications.