Giuseppe Costantino Giaconia
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Giuseppe Costantino Giaconia has a total of 147 co-authors. Here are the top co-authors by number of shared publications:
- Gabriele Adamo
Department of Energy, Information engineering, Mathematical models (DEIM), University of Palermo Viale delle Scienze, Bldg. no. 9, 90128 Palermo, Italy
11 shared publications A. Parisi
Department of Energy, Information engineering, Mathematical models (DEIM), University of Palermo Viale delle Scienze, Bldg. no. 9, 90128 Palermo, Italy
8 shared publicationsS. Stivala
Department of Energy, Information engineering, Mathematical models (DEIM), University of Palermo Viale delle Scienze, Bldg. no. 9, 90128 Palermo, Italy
8 shared publicationsA. C. Busacca
Department of Energy, Information engineering, Mathematical models (DEIM), University of Palermo Viale delle Scienze, Bldg. no. 9, 90128 Palermo, Italy
7 shared publicationsA. Tomasino
Department of Energy, Information engineering, Mathematical models (DEIM), University of Palermo Viale delle Scienze, Bldg. no. 9, 90128 Palermo, Italy
7 shared publications- Giuseppe Galioto
Department of Engineering, University of Palermo, Viale delle Scienze, Building 9, 90128 Palermo, Italy
7 shared publications
Latest Publications
- Top Cited PapersOpen Access
- 15 February 2026
- Published by MDPI AG in Electronics
- Vol. 15 (4) , 835
Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic review methodology, we analyzed 94 peer-reviewed publications spanning device technology, converter architectures, and system applications. We employ a bottom-up approach, progressing from fundamental material properties through device architectures and converter topologies to system-level implications. We examine how intrinsic material properties enable operation at elevated temperatures, voltages, and frequencies while minimizing losses. Through analysis of Figures of Merit and system-level Key Performance Indicators, we quantify WBG benefits across automotive, industrial, renewable energy, and consumer electronics sectors, demonstrating 3–5× power density improvements and 20–40% cost reductions. The review presents emerging device technologies, including vertical GaN for medium-voltage applications and monolithic bidirectional switches (BDSs), enabling single-stage power conversion. We provide the first comprehensive topology-level comparison of emerging vertical GaN and monolithic bidirectional switches against established SiC solutions, identifying specific applications where each technology offers advantages. A comprehensive topology-by-topology comparison between SiC and GaN is provided, offering design guidelines for device selection. The review addresses practical constraints, including dynamic on-resistance degradation, threshold voltage instability, and electromagnetic interference challenges for both SiC and GaN. Finally, we examine emerging UWBG materials (-Ga2O3, AlN, c-BN, Diamond) and their development status, manufacturing challenges, supply chain considerations, and commercialization prospects for ultra-high-voltage applications.- 15 February 2026
- Published by MDPI AG in Electronics
- Vol. 15 (4) , 835
Top Cited PapersOpen AccessWide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic review methodology, we analyzed 94 peer-reviewed publications spanning device technology, converter architectures, and system applications. We employ a bottom-up approach, progressing from fundamental material properties through device architectures and converter topologies to system-level implications. We examine how intrinsic material properties enable operation at elevated temperatures, voltages, and frequencies while minimizing losses. Through analysis of Figures of Merit and system-level Key Performance Indicators, we quantify WBG benefits across automotive, industrial, renewable energy, and consumer electronics sectors, demonstrating 3–5× power density improvements and 20–40% cost reductions. The review presents emerging device technologies, including vertical GaN for medium-voltage applications and monolithic bidirectional switches (BDSs), enabling single-stage power conversion. We provide the first comprehensive topology-level comparison of emerging vertical GaN and monolithic bidirectional switches against established SiC solutions, identifying specific applications where each technology offers advantages. A comprehensive topology-by-topology comparison between SiC and GaN is provided, offering design guidelines for device selection. The review addresses practical constraints, including dynamic on-resistance degradation, threshold voltage instability, and electromagnetic interference challenges for both SiC and GaN. Finally, we examine emerging UWBG materials (-Ga2O3, AlN, c-BN, Diamond) and their development status, manufacturing challenges, supply chain considerations, and commercialization prospects for ultra-high-voltage applications. - Open Access
- 5 February 2026
- Published by MDPI AG in Preprints.org
Wide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic review methodology, we analyzed more than 50 peer-reviewed publications spanning device technology, converter architectures, and system applications. We employ a bottom-up approach, progressing from fundamental material properties through device architectures and converter topologies to system-level implications. We examine how intrinsic material properties enable operation at elevated temperatures, voltages, and frequencies while minimizing losses. Through analysis of Figures of Merit and system-level Key Performance Indicators, we quantify WBG benefits across automotive, industrial, renewable energy, and consumer electronics sectors, demonstrating 3--5x power density improvements and 20--40\% cost reductions. The review presents emerging device technologies including vertical GaN for medium-voltage applications and monolithic bidirectional switches (BDS) enabling single-stage power conversion. We provide the first comprehensive topology-level comparison of emerging vertical GaN and monolithic bidirectional switches against established SiC solutions, identifying specific applications where each technology offers advantages. A comprehensive topology-by-topology comparison between SiC and GaN is provided, offering design guidelines for device selection. The review addresses practical constraints including dynamic on-resistance degradation, threshold voltage instability, and electromagnetic interference challenges for both SiC and GaN. Finally, we examine emerging UWBG materials (Beta-Ga2O3, AlN, c-BN, Diamond) and their development status, manufacturing challenges, supply chain considerations, and commercialization prospects for ultra-high-voltage applications.
- 5 February 2026
- Published by MDPI AG in Preprints.org
Open AccessWide and Ultrawide Bandgap Power Semiconductors: A Comprehensive System-Level Review
This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based systematic review methodology, we analyzed more than 50 peer-reviewed publications spanning device technology, converter architectures, and system applications. We employ a bottom-up approach, progressing from fundamental material properties through device architectures and converter topologies to system-level implications. We examine how intrinsic material properties enable operation at elevated temperatures, voltages, and frequencies while minimizing losses. Through analysis of Figures of Merit and system-level Key Performance Indicators, we quantify WBG benefits across automotive, industrial, renewable energy, and consumer electronics sectors, demonstrating 3--5x power density improvements and 20--40\% cost reductions. The review presents emerging device technologies including vertical GaN for medium-voltage applications and monolithic bidirectional switches (BDS) enabling single-stage power conversion. We provide the first comprehensive topology-level comparison of emerging vertical GaN and monolithic bidirectional switches against established SiC solutions, identifying specific applications where each technology offers advantages. A comprehensive topology-by-topology comparison between SiC and GaN is provided, offering design guidelines for device selection. The review addresses practical constraints including dynamic on-resistance degradation, threshold voltage instability, and electromagnetic interference challenges for both SiC and GaN. Finally, we examine emerging UWBG materials (Beta-Ga2O3, AlN, c-BN, Diamond) and their development status, manufacturing challenges, supply chain considerations, and commercialization prospects for ultra-high-voltage applications.
- Open Access
- 6 January 2026
- Published by Elsevier in Control Engineering Practice
- Vol. 169
Robust control of interleaved boost converter with active disturbance compensation
- 6 January 2026
- Published by Elsevier in Control Engineering Practice
- Vol. 169
Open AccessRobust control of interleaved boost converter with active disturbance compensation
- Open Access
- 6 August 2025
- Published by Elsevier in Computers in Biology and Medicine
- Vol. 196 (Pt C) , 110803
Effects of electrocardiographic noise on ultra-short term Heart Rate Variability indices
- 6 August 2025
- Published by Elsevier in Computers in Biology and Medicine
- Vol. 196 (Pt C) , 110803
Open AccessEffects of electrocardiographic noise on ultra-short term Heart Rate Variability indices
- Open Access
Time-Resolved Information-Theoretic and Spectral Analysis of fNIRS Signals from Multi-Channel Prototypal Device
Functional near-infrared spectroscopy (fNIRS) is a non-invasive imaging technique that measures brain hemodynamic activity by detecting changes in oxyhemoglobin and deoxyhemoglobin concentrations using light in the near-infrared spectrum. This study aims to provide a comprehensive characterization of fNIRS signals acquired with a prototypal continuous-wave fNIRS device during a breath-holding task, to evaluate the impact of respiratory activity on scalp hemodynamics within the framework of Network Physiology. To this end, information-theoretic and spectral analysis methods were applied to characterize the dynamics of fNIRS signals. In the time domain, time-resolved information-theoretic measures, including entropy, conditional entropy and, information storage, were employed to assess the complexity and predictability of the fNIRS signals. These measures highlighted distinct informational dynamics across the breathing and apnea phases, with conditional entropy showing a significant modulation driven by respiratory activity. In the frequency domain, power spectral density was estimated using a parametric method, allowing the identification of distinct frequency bands related to vascular and respiratory components. The analysis revealed significant modulations in both the amplitude and frequency of oscillations during the task, particularly in the high-frequency band associated with respiratory activity. Our observations demonstrate that the proposed analysis provides novel insights into the characterization of fNIRS signals, enhancing the understanding of the impact of task-induced peripheral cardiovascular responses on NIRS hemodynamics.
Open AccessTime-Resolved Information-Theoretic and Spectral Analysis of fNIRS Signals from Multi-Channel Prototypal Device
Functional near-infrared spectroscopy (fNIRS) is a non-invasive imaging technique that measures brain hemodynamic activity by detecting changes in oxyhemoglobin and deoxyhemoglobin concentrations using light in the near-infrared spectrum. This study aims to provide a comprehensive characterization of fNIRS signals acquired with a prototypal continuous-wave fNIRS device during a breath-holding task, to evaluate the impact of respiratory activity on scalp hemodynamics within the framework of Network Physiology. To this end, information-theoretic and spectral analysis methods were applied to characterize the dynamics of fNIRS signals. In the time domain, time-resolved information-theoretic measures, including entropy, conditional entropy and, information storage, were employed to assess the complexity and predictability of the fNIRS signals. These measures highlighted distinct informational dynamics across the breathing and apnea phases, with conditional entropy showing a significant modulation driven by respiratory activity. In the frequency domain, power spectral density was estimated using a parametric method, allowing the identification of distinct frequency bands related to vascular and respiratory components. The analysis revealed significant modulations in both the amplitude and frequency of oscillations during the task, particularly in the high-frequency band associated with respiratory activity. Our observations demonstrate that the proposed analysis provides novel insights into the characterization of fNIRS signals, enhancing the understanding of the impact of task-induced peripheral cardiovascular responses on NIRS hemodynamics.
- 8 March 2025
- Published by Springer Nature
- p. 380-386
Synchronized Vibration Data Acquisition for Seismocardiography
- 8 March 2025
- Published by Springer Nature
- p. 380-386
Synchronized Vibration Data Acquisition for Seismocardiography
- 8 March 2025
- Published by Springer Nature
- p. 365-372
Portable Multi-sensor System for Digital Processing of Electrocardiographic Signals
- 8 March 2025
- Published by Springer Nature
- p. 365-372
Portable Multi-sensor System for Digital Processing of Electrocardiographic Signals
- Open Access
- 21 February 2025
- Published by MDPI AG in Information
- Vol. 16 (3) , 162
A Graduate Level Personalized Learning Environment in the Field of f-NIRS Signal Processing
Active student involvement and instruction through experience in everyday contexts are pedagogical approaches suitable to promote inquiry-based learning and improve learners’ cognitive skills. Nevertheless, many university and postgraduate courses offer lecture-based instructions of theoretical concepts to the students; little attention is still devoted to design hands-on activities, to improve practical/technical competencies and enhance students’ effective understanding of the concepts. The development of a personalized, student-centered learning environment that encourages teamwork and inquiry-based learning aligns with the contemporary push for interdisciplinary education in bioengineering fields. This is particularly relevant for fostering expertise in emerging technologies like functional Near-Infrared Spectroscopy (f-NIRS). In this framework, this paper reports a lab activity for bioelectronic engineering and/or biomedical science students focused on analyzing prefrontal cortex activation during a memory task, processing the f-NIRS signals. This pilot activity, conducted at the University of Palermo (Italy), involved Master’s and Ph.D. students working in teams to address challenges in experimental design. The study combines cutting-edge biosignal detection techniques with innovative educational strategies, offering substantial contributions to both bioengineering and educational research. The outcomes suggest that a hands-on and student-centered laboratory, experienced through a methodical sequence of self-directed learning activities, could considerably boost the student motivation to learn and the level of engagement in bioengineering and biosciences.
- 21 February 2025
- Published by MDPI AG in Information
- Vol. 16 (3) , 162
Open AccessA Graduate Level Personalized Learning Environment in the Field of f-NIRS Signal Processing
Active student involvement and instruction through experience in everyday contexts are pedagogical approaches suitable to promote inquiry-based learning and improve learners’ cognitive skills. Nevertheless, many university and postgraduate courses offer lecture-based instructions of theoretical concepts to the students; little attention is still devoted to design hands-on activities, to improve practical/technical competencies and enhance students’ effective understanding of the concepts. The development of a personalized, student-centered learning environment that encourages teamwork and inquiry-based learning aligns with the contemporary push for interdisciplinary education in bioengineering fields. This is particularly relevant for fostering expertise in emerging technologies like functional Near-Infrared Spectroscopy (f-NIRS). In this framework, this paper reports a lab activity for bioelectronic engineering and/or biomedical science students focused on analyzing prefrontal cortex activation during a memory task, processing the f-NIRS signals. This pilot activity, conducted at the University of Palermo (Italy), involved Master’s and Ph.D. students working in teams to address challenges in experimental design. The study combines cutting-edge biosignal detection techniques with innovative educational strategies, offering substantial contributions to both bioengineering and educational research. The outcomes suggest that a hands-on and student-centered laboratory, experienced through a methodical sequence of self-directed learning activities, could considerably boost the student motivation to learn and the level of engagement in bioengineering and biosciences.
- 29 April 2023
- Published by Springer Nature
- p. 16-22
Microcontroller Based Edge Computing for Pipe Leakage Detection
- 29 April 2023
- Published by Springer Nature
- p. 16-22
Microcontroller Based Edge Computing for Pipe Leakage Detection
- 29 April 2023
- Published by Springer Nature
- p. 30-38
Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization
- 29 April 2023
- Published by Springer Nature
- p. 30-38
Microcontroller Based Portable Measurement System for GaN and SiC Devices Characterization