Hongfei Du
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Hongfei Du has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Guangzhong Xie
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2 shared publications - Huiling Tai
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 611731, China
2 shared publications - Qiuping Zhang
Key Laboratory of Information Materials of Sichuan Province, School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, China
2 shared publications Guangzhong Xie
School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC) Chengdu, P. R. China
1 shared publication- He Yu
School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu China
1 shared publication - Tao Xie
State Key Laboratory of Chemical Engineering and Low-carbon Technology, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, China
1 shared publication
Latest Publications
- Open Access
Enhanced Room Temperature NO2 Sensing Performance of RGO Nanosheets by Building RGO/SnO2 Nanocomposite System
RGO/SnO nanocomposites were prepared by a simple blending method and then airbrushed on interdigitated electrodes to obtain the corresponding gas sensors. The characterizations of SEM, TEM, Raman, XRD and FTIR were used to characterize the microstructures, morphologies and surface chemical compositions of the nanocomposites, indicating that the two materials coexist in the composite films and the concentration of surface defects is affected by the amount of SnO nanoparticles. It is also found that the room temperature sensing performance of RGO to NO can be improved by introducing appropriate amount of SnO nanoparticles. The enhanced NO sensing properties are attributed to the rough surface structure and increased surface area and surface defects of the nanocomposite films. Since further reduction of RGO, heat treating the sensing films resulted in a decrease in the response and recovery times of the sensors. Furthermore, the sensor annealed at 200 C exhibited a small baseline drift, wide detection range, good linearity, high stability and better selectivity.Open AccessEnhanced Room Temperature NO2 Sensing Performance of RGO Nanosheets by Building RGO/SnO2 Nanocomposite System
RGO/SnO nanocomposites were prepared by a simple blending method and then airbrushed on interdigitated electrodes to obtain the corresponding gas sensors. The characterizations of SEM, TEM, Raman, XRD and FTIR were used to characterize the microstructures, morphologies and surface chemical compositions of the nanocomposites, indicating that the two materials coexist in the composite films and the concentration of surface defects is affected by the amount of SnO nanoparticles. It is also found that the room temperature sensing performance of RGO to NO can be improved by introducing appropriate amount of SnO nanoparticles. The enhanced NO sensing properties are attributed to the rough surface structure and increased surface area and surface defects of the nanocomposite films. Since further reduction of RGO, heat treating the sensing films resulted in a decrease in the response and recovery times of the sensors. Furthermore, the sensor annealed at 200 C exhibited a small baseline drift, wide detection range, good linearity, high stability and better selectivity. - Open Access
A New Model and Its Application for the Dynamic Response of RGO Resistive Gas Sensor
An reduced graphene oxide (RGO) resistive gas sensor was prepared to detect ammonia at room temperature, the result indicated that the desorption of gas (NH ) molecules from a graphene-based sensor was difficult, which lead to a baseline drift. The responses of different concentrations were compared and studied. It was found that both the response rate and its acceleration were affected by the gas concentration. An Intermolecular Forces Based Model was established to explain the adsorption and desorption dynamic response curves. A new method was proposed based on this model. The first and second derivative extrema (FSDE) of the response curve can be attained quickly to calibrate the gas concentrations. The experiment results demonstrated that this new method could eliminate the baseline drift and was capable of increasing the efficiency of gas calibration significantly.Open AccessA New Model and Its Application for the Dynamic Response of RGO Resistive Gas Sensor
An reduced graphene oxide (RGO) resistive gas sensor was prepared to detect ammonia at room temperature, the result indicated that the desorption of gas (NH ) molecules from a graphene-based sensor was difficult, which lead to a baseline drift. The responses of different concentrations were compared and studied. It was found that both the response rate and its acceleration were affected by the gas concentration. An Intermolecular Forces Based Model was established to explain the adsorption and desorption dynamic response curves. A new method was proposed based on this model. The first and second derivative extrema (FSDE) of the response curve can be attained quickly to calibrate the gas concentrations. The experiment results demonstrated that this new method could eliminate the baseline drift and was capable of increasing the efficiency of gas calibration significantly. - 1 November 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Thin film transistors gas sensors based on poly(3-hexylthiophene)/Zinc oxide-nanorods composite film for nitrogen dioxide detection
A new approach was proposed to evaluate the performance of organic thin film transistors (OTFTs) gas sensors. Back-gated OTFTs gas sensors with poly (3-hexylthiophene) (P3HT)/Zinc oxide (ZnO) nanorods composite film as the active layers and gas sensing layers were prepared for nitrogen dioxide (NO2) detection. Electrical parameters of OTFTs based on pure P3HT film and P3HT/ZnO-nanorods composite film were calculated and analyzed. Response characteristics of gas sensors to NO2 were studied. It can be found that responses of OTFTs gas sensors were inaccurate according to conventional definition. The slope of fitting line (ΔI versus log t) was proposed as a new method to evaluation gas properties of OTFTs sensors. The calculate results illustrated that the sensitivity can be increased 40.2% due to appropriate amount of ZnO-nanorods doping.
- 1 November 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Thin film transistors gas sensors based on poly(3-hexylthiophene)/Zinc oxide-nanorods composite film for nitrogen dioxide detection
A new approach was proposed to evaluate the performance of organic thin film transistors (OTFTs) gas sensors. Back-gated OTFTs gas sensors with poly (3-hexylthiophene) (P3HT)/Zinc oxide (ZnO) nanorods composite film as the active layers and gas sensing layers were prepared for nitrogen dioxide (NO2) detection. Electrical parameters of OTFTs based on pure P3HT film and P3HT/ZnO-nanorods composite film were calculated and analyzed. Response characteristics of gas sensors to NO2 were studied. It can be found that responses of OTFTs gas sensors were inaccurate according to conventional definition. The slope of fitting line (ΔI versus log t) was proposed as a new method to evaluation gas properties of OTFTs sensors. The calculate results illustrated that the sensitivity can be increased 40.2% due to appropriate amount of ZnO-nanorods doping.