Yi-Jan Emery Chen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Yi-Jan Emery Chen has a total of 137 co-authors. Here are the top co-authors by number of shared publications:
Tang-Nian Luo
Graduate Institute of Electronics Engineering, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
24 shared publicationsDeukhyoun Heo
Department of Electrical and Computer Engineering, Washington State University, Pullman, WA, USA
19 shared publicationsJau-Horng Chen
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei, Taiwan
16 shared publicationsHao-Shun Yang
Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei, Taiwan
14 shared publicationsYueh-Hua Yu
Graduate Institute of Electronics Engineering, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
11 shared publicationsPang-Jung Liu
Department of Electrical Engineering , National Taipei University of Technology, Taipei, Taiwan
6 shared publications
Latest Publications
- 15 July 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (10) , 1618-1621
An RF CMOS Pulse Modulator for Wireless Communication Polar Transmitters
This letter presents a 3.5-GHz fast-transient CMOS pulse modulator tailored for the application of wireless communication polar transmitters. The techniques of loop matching and shunt LC desensitization are used to effectuate the modulator’s wideband matching and absorptive characteristics. The measured insertion loss of the modulator is 2.2 dB, and the 3-dB bandwidth is 750 MHz, ranging from 3.03 to 3.78 GHz. The rise time and fall time of the modulated pulses are 0.9 and 0.62 ns, respectively. Tested with a 20-MHz 256-QAM 5G NR signal, the RF polar transmitter using the CMOS modulators can achieve the adjacent channel leakage ratio (ACLR) better than −35 dBc.
- 15 July 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (10) , 1618-1621
An RF CMOS Pulse Modulator for Wireless Communication Polar Transmitters
This letter presents a 3.5-GHz fast-transient CMOS pulse modulator tailored for the application of wireless communication polar transmitters. The techniques of loop matching and shunt LC desensitization are used to effectuate the modulator’s wideband matching and absorptive characteristics. The measured insertion loss of the modulator is 2.2 dB, and the 3-dB bandwidth is 750 MHz, ranging from 3.03 to 3.78 GHz. The rise time and fall time of the modulated pulses are 0.9 and 0.62 ns, respectively. Tested with a 20-MHz 256-QAM 5G NR signal, the RF polar transmitter using the CMOS modulators can achieve the adjacent channel leakage ratio (ACLR) better than −35 dBc.
- 25 March 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems II: Express Briefs
- Vol. 71 (9) , 4166-4170
A Direct Digital Synthesis Transmitter for 5G Applications With Low-Resolution DACs
Conventional radio frequency (RF) transmitters frequently necessitate a pair of high-resolution, high-speed digital-to-analog converters (DACs) to ensure a specific level of linearity in wireless communication systems. Nevertheless, the high-resolution DACs escalate power consumption and area requirements and intensify the need for heat dissipation mechanisms. This paper presents a direct digital synthesis (DDS) transmitter using a pair of RF DACs with just 2 bits of resolution. The DDS transmitter, which uses a proposed digital pulse-width modulation signal with dithering, is resistant to power amplifier (PA) nonlinearity. Tested with 5G uplink signals and a pair of nonlinear PAs at 836.5 MHz, the transmitter could pass the stringent spectral requirements for 5G applications without using any digital predistortion or calibration techniques.
- 25 March 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems II: Express Briefs
- Vol. 71 (9) , 4166-4170
A Direct Digital Synthesis Transmitter for 5G Applications With Low-Resolution DACs
Conventional radio frequency (RF) transmitters frequently necessitate a pair of high-resolution, high-speed digital-to-analog converters (DACs) to ensure a specific level of linearity in wireless communication systems. Nevertheless, the high-resolution DACs escalate power consumption and area requirements and intensify the need for heat dissipation mechanisms. This paper presents a direct digital synthesis (DDS) transmitter using a pair of RF DACs with just 2 bits of resolution. The DDS transmitter, which uses a proposed digital pulse-width modulation signal with dithering, is resistant to power amplifier (PA) nonlinearity. Tested with 5G uplink signals and a pair of nonlinear PAs at 836.5 MHz, the transmitter could pass the stringent spectral requirements for 5G applications without using any digital predistortion or calibration techniques.
- 20 December 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 34 (2) , 229-232
A 2.4-GHz CMOS Efficiency-Enhanced Rectifier With a Differential-Feed Patch Antenna
This letter presents the codesign of a 2.4-GHz CMOS rectifier and an antenna for efficiency enhancement at low input power. The RF differential-driven rectifier architecture is used to lower the driving voltage required to turn on the transistors. The high-resistance feedback path with an offset voltage is added to the rectifier circuit to reduce the reverse leakage current for efficiency enhancement. The rectifier is connected directly to the differential-feed antenna to eliminate the need and loss of a balun. The measured power conversion efficiency (PCE) of the rectifier achieves 63% at the input power of $-$ 8 dBm.
- 20 December 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 34 (2) , 229-232
A 2.4-GHz CMOS Efficiency-Enhanced Rectifier With a Differential-Feed Patch Antenna
This letter presents the codesign of a 2.4-GHz CMOS rectifier and an antenna for efficiency enhancement at low input power. The RF differential-driven rectifier architecture is used to lower the driving voltage required to turn on the transistors. The high-resistance feedback path with an offset voltage is added to the rectifier circuit to reduce the reverse leakage current for efficiency enhancement. The rectifier is connected directly to the differential-feed antenna to eliminate the need and loss of a balun. The measured power conversion efficiency (PCE) of the rectifier achieves 63% at the input power of $-$ 8 dBm.
- 4 October 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Packaging and Manufacturing Technology
- Vol. 13 (11) , 1778-1789
Dual-Band Dual-Polarized Microstrip Patch Antenna With Parasitic Elements for 5G Antenna-in-Package Design at Millimeter-Wave Frequencies
Antenna implementations at millimeter-wave (mmW) frequencies on printed circuit boards (PCBs) suffer a high dielectric loss due to long metal-feeding microstrips. Antenna-in-packages (AiPs) are practical solutions to shorten the lengths for power loss reduction. Also, 28 and 39GHz bands have been designated for the fifth generation (5G) of mobile communications. An active AiP covering these two bands is developed to provide dual-band and dual-polarization radiation based on the microstrip patch structure with parasitic elements to produce a second resonance. The large cross-polarization due to the mutual coupling between adjacent ports of dual-polarization is further suppressed by considering an image relation of elemental antennas’ orientations in the array composition. Numerical full-wave simulations and measurements over an antenna prototype are both shown to demonstrate the radiation where active transceiver modules were integrated. The examinations validate the feasibility of this AiP technique for 5G user equipment applications.
- 4 October 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Components, Packaging and Manufacturing Technology
- Vol. 13 (11) , 1778-1789
Dual-Band Dual-Polarized Microstrip Patch Antenna With Parasitic Elements for 5G Antenna-in-Package Design at Millimeter-Wave Frequencies
Antenna implementations at millimeter-wave (mmW) frequencies on printed circuit boards (PCBs) suffer a high dielectric loss due to long metal-feeding microstrips. Antenna-in-packages (AiPs) are practical solutions to shorten the lengths for power loss reduction. Also, 28 and 39GHz bands have been designated for the fifth generation (5G) of mobile communications. An active AiP covering these two bands is developed to provide dual-band and dual-polarization radiation based on the microstrip patch structure with parasitic elements to produce a second resonance. The large cross-polarization due to the mutual coupling between adjacent ports of dual-polarization is further suppressed by considering an image relation of elemental antennas’ orientations in the array composition. Numerical full-wave simulations and measurements over an antenna prototype are both shown to demonstrate the radiation where active transceiver modules were integrated. The examinations validate the feasibility of this AiP technique for 5G user equipment applications.
- 22 September 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 70 (11) , 5205-5212
A Dual-Phase Center-Aligned 7-Bit Digital Pulsewidth Modulator for Polar Transmitters
This article presents a dual-phase center-aligned 7-bit digital pulsewidth modulator for the envelope modulation of pulse-modulated polar transmitters (PMPTs). The digital pulsewidth modulator operates at a clock frequency and delivers the modulation frequency of 100 MHz. A delay-locked loop (DLL) consisting of 128 delay cells is used to generate the pulse edges for synthesis of center-aligned pulsewidth modulation (PWM) waveforms. The pulsewidth resolution is 78.1 ps. The measurement results show that the integral nonlinearity (INL) and differential nonlinearity (DNL) of the output pulses are within $\pm$ 0.4 and $\pm$ 0.3 LSB, respectively, in the duty cycle range of 2.12%–96.51%. Tested with a 20-MHz 256-quadrature-amplitude modulation (QAM) 5G new radio (NR) signal, the transmitter signal using the output of the modulator achieves the adjacent channel leakage ratio (ACLR) of $-$ 33.8 dBc.
- 22 September 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 70 (11) , 5205-5212
A Dual-Phase Center-Aligned 7-Bit Digital Pulsewidth Modulator for Polar Transmitters
This article presents a dual-phase center-aligned 7-bit digital pulsewidth modulator for the envelope modulation of pulse-modulated polar transmitters (PMPTs). The digital pulsewidth modulator operates at a clock frequency and delivers the modulation frequency of 100 MHz. A delay-locked loop (DLL) consisting of 128 delay cells is used to generate the pulse edges for synthesis of center-aligned pulsewidth modulation (PWM) waveforms. The pulsewidth resolution is 78.1 ps. The measurement results show that the integral nonlinearity (INL) and differential nonlinearity (DNL) of the output pulses are within $\pm$ 0.4 and $\pm$ 0.3 LSB, respectively, in the duty cycle range of 2.12%–96.51%. Tested with a 20-MHz 256-quadrature-amplitude modulation (QAM) 5G new radio (NR) signal, the transmitter signal using the output of the modulator achieves the adjacent channel leakage ratio (ACLR) of $-$ 33.8 dBc.
- 5 August 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 71 (00189456) , 1-9
A Fast-Settling Frequency Synthesizer Using Statistical Frequency Measurement Method
This work presents a reconfigurable RF frequency synthesizer implemented with the field-programmable gate array (FPGA) and the digital-controlled oscillator (DCO) fabricated in a 0.18- $\mu \text{m}$ CMOS technology. The frequency synthesizer uses a fractional frequency ratio calculator (FRC) to measure the DCO output frequency and realize frequency locking. Due to the FRC, the correlation of the DCO frequencies and its control codes can be characterized and stored in a lookup table (LUT) of the FPGA without the need of external measurement instruments. When requested to settle at a new frequency, the synthesizer looks for the DCO control code from the LUT and performs the frequency-locking routine. The synthesizer covers a wide frequency output range from 496 to 2470 MHz with the resolution of 195 kHz and achieves a settling time of 32.5–45 ns.
- 5 August 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 71 (00189456) , 1-9
A Fast-Settling Frequency Synthesizer Using Statistical Frequency Measurement Method
This work presents a reconfigurable RF frequency synthesizer implemented with the field-programmable gate array (FPGA) and the digital-controlled oscillator (DCO) fabricated in a 0.18- $\mu \text{m}$ CMOS technology. The frequency synthesizer uses a fractional frequency ratio calculator (FRC) to measure the DCO output frequency and realize frequency locking. Due to the FRC, the correlation of the DCO frequencies and its control codes can be characterized and stored in a lookup table (LUT) of the FPGA without the need of external measurement instruments. When requested to settle at a new frequency, the synthesizer looks for the DCO control code from the LUT and performs the frequency-locking routine. The synthesizer covers a wide frequency output range from 496 to 2470 MHz with the resolution of 195 kHz and achieves a settling time of 32.5–45 ns.
- Open Access
- 7 July 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 23 (8) , 111
The 23rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.
- 7 July 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 23 (8) , 111
Open AccessThe 23rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.
- 23 June 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 32 (11) , 1359-1362
A Low-Resolution Direct Digital Synthesis Transmitter Architecture Using Dithering for Multiband 5G NR Mobile Applications
This letter presents a low-resolution multiband transmitter architecture using direct digital synthesis (DDS) with dithering. Modern modulated signals constructed by a low-resolution digital-to-analog converter (DAC) suffer from quantization errors and distortions. The proposed technique reduces the quantization problems with the use of a proper oversampling ratio (OSR) and the dithering technique. This technique has lower cost and lower complexity compared to conventional transmitters while maintaining linearity performance. A 50-MHz 5G NR 256-quadratic-amplitude modulation (QAM) signal is used for concept validation at bands n1, n40, and n50. The proposed work achieved the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of under$-$ 30 dBc and 3.5%, respectively A single 3-bit 10-GS/s radio frequency (RF) DAC is used where the performance is similar to a conventional transmitter using a pair of 5-bit baseband in-phase and quadrature (IQ) DACs.- 23 June 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 32 (11) , 1359-1362
A Low-Resolution Direct Digital Synthesis Transmitter Architecture Using Dithering for Multiband 5G NR Mobile Applications
This letter presents a low-resolution multiband transmitter architecture using direct digital synthesis (DDS) with dithering. Modern modulated signals constructed by a low-resolution digital-to-analog converter (DAC) suffer from quantization errors and distortions. The proposed technique reduces the quantization problems with the use of a proper oversampling ratio (OSR) and the dithering technique. This technique has lower cost and lower complexity compared to conventional transmitters while maintaining linearity performance. A 50-MHz 5G NR 256-quadratic-amplitude modulation (QAM) signal is used for concept validation at bands n1, n40, and n50. The proposed work achieved the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of under$-$ 30 dBc and 3.5%, respectively A single 3-bit 10-GS/s radio frequency (RF) DAC is used where the performance is similar to a conventional transmitter using a pair of 5-bit baseband in-phase and quadrature (IQ) DACs.- 18 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems for Video Technology
- Vol. 32 (10) , 7204-7211
A High Voltage Driving Chiplet in Standard 0.18-μm CMOS for Micro-Pixelated LED Displays Integrated With LTPS TFTs
This paper presents a high-voltage emission driver chiplet for inorganic micro-pixelated light-emitting-diode ($\mu $ LED) displays in a standard 0.18-$\mu \text{m}$ CMOS technology. Different from the conventional driving scheme of the active-matrix organic light-emitting-diode display, which places the scan drivers and emission drivers at the panel bezels, the CMOS driver chiplets are proposed to sit on the glass substrate among$\mu $ LEDs. The high-voltage swing buffers in the CMOS chiplet are used to drive the low-temperature poly-silicon thin-film transistors on glass backplane to enable the emission control of 300$\mu $ LEDs. A single CMOS chiplet has 20 output channels, each offering 16M-color depth with 256 grey levels realized by an 8-bit digital-to-analog converter. The maximum channel current is 247$\mu \text{A}$ and the TFT-gate-driving voltage is 15 V.- 18 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuits and Systems for Video Technology
- Vol. 32 (10) , 7204-7211
A High Voltage Driving Chiplet in Standard 0.18-μm CMOS for Micro-Pixelated LED Displays Integrated With LTPS TFTs
This paper presents a high-voltage emission driver chiplet for inorganic micro-pixelated light-emitting-diode ($\mu $ LED) displays in a standard 0.18-$\mu \text{m}$ CMOS technology. Different from the conventional driving scheme of the active-matrix organic light-emitting-diode display, which places the scan drivers and emission drivers at the panel bezels, the CMOS driver chiplets are proposed to sit on the glass substrate among$\mu $ LEDs. The high-voltage swing buffers in the CMOS chiplet are used to drive the low-temperature poly-silicon thin-film transistors on glass backplane to enable the emission control of 300$\mu $ LEDs. A single CMOS chiplet has 20 output channels, each offering 16M-color depth with 256 grey levels realized by an 8-bit digital-to-analog converter. The maximum channel current is 247$\mu \text{A}$ and the TFT-gate-driving voltage is 15 V.- 23 November 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 36 (6) , 6814-6823
A CMOS Envelope Tracking Supply Converter for RF Power Amplifiers of 5G NR Mobile Terminals
An envelope tracking supply converter was presented for the RF power amplifiers of sub-6 GHz 5G NR mobile devices. The hybrid supply converter consisted of a linear, fast switching, and slow switching regulators connected in parallel. The two-phase hysteretic control was proposed for use in the fast switching regulator to track the fast-varying envelope of 40-MHz 5G NR signal. The 0.25-um CMOS supply converter achieved a maximum efficiency of 79.1%. The power-added efficiency improvement of the RF power amplifier with the proposed supply converter was 3.1% when tested with a 40-MHz 256-QAM 5G NR signal.
- 23 November 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 36 (6) , 6814-6823
A CMOS Envelope Tracking Supply Converter for RF Power Amplifiers of 5G NR Mobile Terminals
An envelope tracking supply converter was presented for the RF power amplifiers of sub-6 GHz 5G NR mobile devices. The hybrid supply converter consisted of a linear, fast switching, and slow switching regulators connected in parallel. The two-phase hysteretic control was proposed for use in the fast switching regulator to track the fast-varying envelope of 40-MHz 5G NR signal. The 0.25-um CMOS supply converter achieved a maximum efficiency of 79.1%. The power-added efficiency improvement of the RF power amplifier with the proposed supply converter was 3.1% when tested with a 40-MHz 256-QAM 5G NR signal.