Ehrenfried Zschech

High-quality patterning determines the properties of patterned emerging two-dimensional (2D) conjugated polymers and is essential for potential applications in future electronic nanodevices. However, the most suitable patterning method for 2D polymers has yet to be determined because we still do not have a comprehensive understanding of their damage mechanisms by visualizing the structural modification that occurs during the patterning process. Here, the damage mechanisms during patterning of 2D polymers, induced by various patterning methods, are unveiled based on a systematic study of structural damage and edge morphology in an imine-based 2D polymer (polyimine). Patterning using a focused electron beam, focused ion beam (FIB) and mechanical carving is evaluated. The focused electron beam successively introduces a sputtering effect, knock-on displacement damage and massive radiolysis with increasing electron dose from 9.46 × 10 7 electrons   nm − 2 to 1.14 × 10 10 electrons   nm − 2 . Successful patterning is enabled by knock-on damage but impeded by carbon contamination beyond a critical sample thickness. A FIB creates current-dependent edge morphologies and extensive damage from ion implantation caused by the tail of the unfocused beam. A precisely controlled tip can tear the polyimine film through grain boundaries and hence create a patterning edge with suitable edge roughness for certain application scenarios when beam damage is avoided. Taking structural damage and the resulting quantitative edge roughness into consideration, this study provides a detailed instruction on the proper patterning techniques for 2D crystalline polymers and paves the way for tailored intrinsic properties and device fabrication using these novel materials.

Surface terminations profoundly influence the intrinsic properties of MXenes, but existing terminations are limited to monoatomic layers or simple groups, showing disordered arrangements and inferior stability. Here we present the synthesis of MXenes with triatomic-layer borate polyanion terminations (OBO terminations) through a flux-assisted eutectic molten etching approach. During the synthesis, Lewis acidic salts act as the etching agent to obtain the MXene backbone, while borax generates BO₂⁻ species, which cap the MXene surface with an O–B–O configuration. In contrast to conventional chlorine/oxygen-terminated Nb₂C with localized charge transport, OBO-terminated Nb₂C features band transport described by the Drude model, exhibiting a 15-fold increase in electrical conductivity and a 10-fold improvement in charge mobility at the d.c. limit. This transition is attributed to surface ordering that effectively mitigates charge carrier backscattering and trapping. Additionally, OBO terminations provide Ti₃C₂ MXene with substantially enriched Li⁺-hosting sites and thereby a large charge-storage capacity of 420 mAh g⁻¹. Our findings illustrate the potential of intricate termination configurations in MXenes and their applications for (opto)electronics and energy storage.

High-resolution imaging of Cu/low-k on-chip interconnect stacks in advanced microelectronic products is demonstrated using full-field transmission X-ray microscopy (TXM). The comparison of two lens-based laboratory X-ray microscopes that are operated at two different photon energies, 8.0 keV and 9.2 keV, shows a contrast enhancement for imaging of copper nanostructures embedded in insulating organosilicate glass of a factor of 5 if 9.2 keV photons are used. Photons with this energy (Ga-Kα radiation) are generated from a Ga-containing target of a laboratory X-ray source applying the liquid-metal-jet technology. The 5 times higher contrast compared to the use of Cu-Kα radiation (8.0 keV photon energy) from a rotating anode X-ray source is caused by the fact that the energy of the Ga-Kα emission line is slightly higher than that of the Cu-K absorption edge (9.0 keV photon energy). The use of Ga-Kα radiation is of particular advantage for imaging of copper interconnects with dimensions from several 100 nm down to several 10 nm in a Cu/SiO₂ or Cu/low-k backend-of-line stack. Physical failure analysis and reliability engineering in the semiconductor industry will benefit from high-contrast X-ray images of sub-μm copper structures in microchips.