Sergio Armando Tomás

(CdTe)1-xAlx films, with 0.01 < x < 0.08, were deposited on soda lime glass and p-type Si(111) substrates by RF co-sputtering using CdTe and aluminum targets. The aluminum content (x) in the films was controlled by the sputtering power applied to the aluminum target, reaching up to x = 0.08 using 100 W. On the other hand, the maximum bandgap value of 1.59 eV was obtained for x = 0.07 deposited employing 80 W. X-ray diffraction patterns suggest that the solubility limit of aluminum in the CdTe lattice is close to x = 0.08. X-ray photoelectron spectroscopy (XPS) analysis suggests a pseudo-alloy-like behavior in the (CdTe)1-xAlx system, as evidenced by the presence of a Te–Al contribution. Optical constants of the (CdTe)1-xAlx films were obtained from the analysis of transmission spectra and were found to be systematically lower than those of bulk CdTe. Electrical measurements for (CdTe)1-xAlx films deposited on p-type Si(111) substrates exhibited rectifying current–voltage (I-V) behavior. Furthermore, the measured photoresponse suggests that (CdTe)1-xAlx films exhibit an optoelectronic activity worth to pursue their study to evaluate practical applications.

The removal of industrial-grade textile dyes, such as methylene blue (MB), from water has gained significant attention due to their well-documented harmful effects on the environment and human heal...