Vittorio Camarchia
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Vittorio Camarchia has a total of 229 co-authors. Here are the top co-authors by number of shared publications:
- Marco Pirola
Politecnico di Torino
81 shared publications - Anna Piacibello
Politecnico di Torino
56 shared publications - Giovanni Ghione
Politecnico di Torino
41 shared publications Roberto Quaglia
Cardiff University
35 shared publications- Chiara Ramella
Politecnico di Torino
29 shared publications - Paolo Colantonio
Electronics Engineering Department, University of Roma Tor Vergata, Rome, Italy
25 shared publications
Latest Publications
- Open Access
- 19 October 2026
- Published by Cambridge University Press (CUP) in International Journal of Microwave and Wireless Technologies
- p. 1-8
Wideband GaN digital class-E Doherty PA for sub-6 GHz 5G applications
This work presents a GaN-based digital class-E Doherty power amplifier module for the 5G FR1 frequency band. The design integrates two identical class-E MMICs, driven by digital pulse-width-modulated signals, in a two-way wideband Doherty configuration. This configuration is co-optimized together with the class-E components of the amplifiers to achieve high efficiency over an extended output back-off range of up to 9 dB. At 7.5 dB back-off, the measured final-stage drain efficiency reaches 68% with a 3.4 GHz single-tone input. Across the (3.2–3.6) GHz band, the prototype maintains a minimum efficiency of 52% at 9 dB output power back-off, with a maximum saturated output power of 32.8 dBm. At 3.3 GHz, the module achieves efficiencies of 60% and 59% for 20 and 100 MHz digital OFDM signals with 9 dB peak-to-average power ratio, respectively.
- 19 October 2026
- Published by Cambridge University Press (CUP) in International Journal of Microwave and Wireless Technologies
- p. 1-8
Open AccessWideband GaN digital class-E Doherty PA for sub-6 GHz 5G applications
This work presents a GaN-based digital class-E Doherty power amplifier module for the 5G FR1 frequency band. The design integrates two identical class-E MMICs, driven by digital pulse-width-modulated signals, in a two-way wideband Doherty configuration. This configuration is co-optimized together with the class-E components of the amplifiers to achieve high efficiency over an extended output back-off range of up to 9 dB. At 7.5 dB back-off, the measured final-stage drain efficiency reaches 68% with a 3.4 GHz single-tone input. Across the (3.2–3.6) GHz band, the prototype maintains a minimum efficiency of 52% at 9 dB output power back-off, with a maximum saturated output power of 32.8 dBm. At 3.3 GHz, the module achieves efficiencies of 60% and 59% for 20 and 100 MHz digital OFDM signals with 9 dB peak-to-average power ratio, respectively.
- 1 August 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (8) , 6725-6726
Guest Editorial:Special Issue on Power Amplifiers for Communications and Satellite Applications
- 1 August 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (8) , 6725-6726
Guest Editorial:Special Issue on Power Amplifiers for Communications and Satellite Applications
- 1 August 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 27 (8) , 101-104
TC-23 Wireless Communications Committee—Technical Activities in 2024–2025 [MTT Society News]
- 1 August 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 27 (8) , 101-104
TC-23 Wireless Communications Committee—Technical Activities in 2024–2025 [MTT Society News]
- 7 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 569-572
Novel GaN-Based Digital Class-E Doherty PA with High 12dB OBO Efficiency
- 7 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 569-572
Novel GaN-Based Digital Class-E Doherty PA with High 12dB OBO Efficiency
- 11 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (2) , 1173
Editorial: Mini Special Issue of IEEE Transactions on Microwave Theory and Techniques
- 11 February 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 74 (2) , 1173
Editorial: Mini Special Issue of IEEE Transactions on Microwave Theory and Techniques
- 18 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 5-8
Comparison of Doherty PAs for Wideband Watt-Level GaAs MMIC Implementations
Two fully integrated GaAs Doherty power amplifiers are presented for 5G FR1 applications requiring operation over the n77 (3.3-4.2 GHz) and n79 (4.4-5.0 GHz) bands. To assess the capabilities of different Doherty combiners in wideband scenarios, two versions are designed and compared: a first implementation using a direct quarter-wave-based combiner and a second version employing an inverted topology, theoretically expected to offer more broadband performance. Both designs employ stacked transistor cells and a balanced architecture to enhance output power and load mismatch resilience. Experimental results show that both implementations achieve comparable performance as the additional losses introduced by the inverted combiner limit its theoretical benefits in terms of efficiency and gain uniformity over the full band. Both achieve more than 34.5 dBm saturated output power, 20 dB small-signal gain, and power-added efficiency above 22% over a 6-dB output back-off.
- 18 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 5-8
Comparison of Doherty PAs for Wideband Watt-Level GaAs MMIC Implementations
Two fully integrated GaAs Doherty power amplifiers are presented for 5G FR1 applications requiring operation over the n77 (3.3-4.2 GHz) and n79 (4.4-5.0 GHz) bands. To assess the capabilities of different Doherty combiners in wideband scenarios, two versions are designed and compared: a first implementation using a direct quarter-wave-based combiner and a second version employing an inverted topology, theoretically expected to offer more broadband performance. Both designs employ stacked transistor cells and a balanced architecture to enhance output power and load mismatch resilience. Experimental results show that both implementations achieve comparable performance as the additional losses introduced by the inverted combiner limit its theoretical benefits in terms of efficiency and gain uniformity over the full band. Both achieve more than 34.5 dBm saturated output power, 20 dB small-signal gain, and power-added efficiency above 22% over a 6-dB output back-off.
- 24 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 27 (3) , 69-80
High-Frequency Doherty Versus Class-AB Power Amplifiers: What Is the Gain?
The Doherty power amplifier (Doherty PA) is a popular back-off efficiency enhancement architecture proposed in 1936 for vacuum tubes and later adapted to solid-state transistor technology. Across the years the Doherty PA has evolved into various configurations which include asymmetric and multiway topologies to meet the stringent linearity and efficiency requirements of modern communication standards. Recent research efforts are focused on extending the Doherty concept toward millimeter-wave frequencies and monolithic integration. In this framework critical design trade-offs emerge: the gain penalty intrinsic to the Doherty architecture, often overlooked in favor of efficiency metrics, may become particularly severe and also impact the overall achievable efficiency. Bandwidth further constrains design choices, often forcing trade-offs between peak performance and wideband behavior. This also reduces the available design space to optimize linearity together with efficiency, which ultimately determines whether Doherty PAs provide sufficient advantages to justify deployment in place of non load-modulated class-AB PAs, generally more wideband, robust to process variations and simpler in terms of bias and architecture design.
- 24 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 27 (3) , 69-80
High-Frequency Doherty Versus Class-AB Power Amplifiers: What Is the Gain?
The Doherty power amplifier (Doherty PA) is a popular back-off efficiency enhancement architecture proposed in 1936 for vacuum tubes and later adapted to solid-state transistor technology. Across the years the Doherty PA has evolved into various configurations which include asymmetric and multiway topologies to meet the stringent linearity and efficiency requirements of modern communication standards. Recent research efforts are focused on extending the Doherty concept toward millimeter-wave frequencies and monolithic integration. In this framework critical design trade-offs emerge: the gain penalty intrinsic to the Doherty architecture, often overlooked in favor of efficiency metrics, may become particularly severe and also impact the overall achievable efficiency. Bandwidth further constrains design choices, often forcing trade-offs between peak performance and wideband behavior. This also reduces the available design space to optimize linearity together with efficiency, which ultimately determines whether Doherty PAs provide sufficient advantages to justify deployment in place of non load-modulated class-AB PAs, generally more wideband, robust to process variations and simpler in terms of bias and architecture design.
- 23 September 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1087-1090
GaN-Based Digital Class-E Doherty Power Amplifier for 5G FR1 Frequency Band
This paper presents for the first time a GaN-based digital class-E Doherty power amplifier module (PA) for the 5G FR1 frequency band. Two identical class-E PA MMICs with digital pulse-width modulated (PWM) input driving are combined in a two-way Doherty configuration for high efficiency over an extended output back-off (OBO) range up to 9 dB. A wideband Doherty combiner design strategy is adapted to the class-E capabilities of the PAs to achieve high-efficiency for low power levels leading to an extended back-off range. At 7.5 dB OBO, the measured final-stage drain efficiency ($\eta_{\text {drain }}$) peaks at $\mathbf{6 8 \%}$ for 3.4 GHz PWM single-tone input signal. Over a $3.2-3.6 \text{GHz}$ frequency range the prototype achieves a minimum of $\mathbf{5 2 \%} \eta_{\text {drain }}$ at 9 dB OBO. The maximum saturated output power is 32.8 dBm. At $\mathbf{3. 3 ~ G H z}$, the PA module achieves $\mathbf{6 0 \%}$ and $\mathbf{5 9 \%} \eta_{\text {drain }}$ for a 20 MHz and 100 MHz 9 dB PAPR digital OFDM input signal, respectively.- 23 September 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1087-1090
GaN-Based Digital Class-E Doherty Power Amplifier for 5G FR1 Frequency Band
This paper presents for the first time a GaN-based digital class-E Doherty power amplifier module (PA) for the 5G FR1 frequency band. Two identical class-E PA MMICs with digital pulse-width modulated (PWM) input driving are combined in a two-way Doherty configuration for high efficiency over an extended output back-off (OBO) range up to 9 dB. A wideband Doherty combiner design strategy is adapted to the class-E capabilities of the PAs to achieve high-efficiency for low power levels leading to an extended back-off range. At 7.5 dB OBO, the measured final-stage drain efficiency ($\eta_{\text {drain }}$) peaks at $\mathbf{6 8 \%}$ for 3.4 GHz PWM single-tone input signal. Over a $3.2-3.6 \text{GHz}$ frequency range the prototype achieves a minimum of $\mathbf{5 2 \%} \eta_{\text {drain }}$ at 9 dB OBO. The maximum saturated output power is 32.8 dBm. At $\mathbf{3. 3 ~ G H z}$, the PA module achieves $\mathbf{6 0 \%}$ and $\mathbf{5 9 \%} \eta_{\text {drain }}$ for a 20 MHz and 100 MHz 9 dB PAPR digital OFDM input signal, respectively.