Jiang Tang

A-site engineering in APb ₂ Cl ₅ nanocrystals tunes the crystal field and Stark gaps, enabling multi-channel fluorescence-intensity-ratio (FIR) thermometry from 78–418 K.

Image sensors are critical components in artificial intelligence^1,2,3, yet conventional approaches bond detector arrays to readout integrated circuits (ROICs), a process that increases complexity and cost⁴. The ideal alternative—growing the detector directly on the ROIC from solution using raw materials—has remained elusive owing to the difficulty in achieving electronic-grade films through a ROIC-compatible process^5,6. Here, inspired by biomineralization principles⁷, we demonstrate monolithic in situ integration (MISI) of high-performance lead sulfide (PbS) photodetectors on ROICs by means of a room-temperature aqueous process. By regulating Pb–OH complexation and suppressing environmental perturbations, we achieve quasi-single-crystalline PbS films with excellent electronic properties (carrier density approximately 2 × 10¹⁵ cm⁻³, mobility 124 cm² V⁻¹ s⁻¹) and wafer-scale, pixel-level uniformity. Through antimony doping, the resulting photodiodes exhibit a record specific detectivity of 4.4 × 10¹¹ Jones at 2.5 µm, surpassing commercial InGaAs detectors⁸. We further fabricate a 640 × 512-pixel focal-plane array that captures clear infrared images and also integrate devices directly onto flexible ROICs. This solution-based MISI approach offers a scalable and transformative route for advanced optoelectronics and sensors.

The rapid deployment of perovskite solar modules (PSMs) raises an urgent need for recycling strategies that can selectively recover critical metals from their complex multilayer architectures. Here, an architecture‐guided sequential recycling strategy is developed by coupling interfacial accessibility with calcination‐induced phase transformation. Ultrasonic water leaching removes >99.8% of Pb from the perovskite layer without detectable dissolution of other target metals. During subsequent HCl leaching, the polymer encapsulant functions as a physical barrier, enabling >99.9% In leaching while protecting the Sn‐coated Cu ribbon from acid attack. Air calcination then removes the encapsulant and promotes the formation of CuO and chemically stable SnO ₂ , creating a strong contrast in leaching behavior that enables selective Cu dissolution in an acetic acid‐hydrogen peroxide system. Overall, recovery ratios of In and Cu exceed 99.7% and 96.1%, respectively, while most of the initial Sn is retained in a Sn‐rich residue. The process further achieves a net economic benefit of about 4.735 USD/m ² module, demonstrating an economically promising and architecture‐enabled route for selective multi‐metal recovery from discarded industrial PSMs.

Self-assembled monolayers (SAMs) are widely used as hole-selective contacts in inverted wide-bandgap (WBG) perovskite solar cells (PSCs). However, incomplete SAM coverage and non-uniform interfacial contact of the SAMs/absorber induce recombination losses and interfacial degradation. Herein, we introduce carbohydrazide (CBH) as an interfacial modifier by interleaving it with SAMs to remedy their uncovered and weakly contacted interfacial regions. The CBH treatment improves interfacial uniformity and strengthens hole extraction, primarily through its dipolar nature and favorable interactions with the perovskite surface. This enables a reduced interfacial defect density and substantially extended interfacial stability. As a result, the optimized WBG perovskite single-junction device achieves a top power conversion efficiency (PCE) of 20.51% (19.56% for control), accompanied by a high open-circuit voltage of 1.355 V. Extending this approach to tandem architectures, its two-terminal all-perovskite tandem solar cell and monolithic mini-module reach impressive PCEs of 29.35% and 23.41% (20.07 cm2), respectively. Both single-junction and tandem devices exhibit pronouncedly improved operational stability. This work provides an innovative and effective strategy to address SAM-related buried interfacial challenges for inverted WBG PSCs.

Cation-exchange synthesis produces monodisperse PbS quantum dots (QDs), yet its central limitation─precursor preparation and dropwise injection─is usually treated as a practical issue. Here, we recast it as sulfur chemical-potential programming; that is, ethyl ziram (EZ) serves as a dynamic sulfur reservoir (DSR) whose thermolysis continuously evolves sulfur activity during growth. This reservoir couples ZnS QD seeds with reservoir-fed growth, shifting the reaction from externally injected templates to an internally regulated kinetic regime, where QD size is set by the balance between seed density and EZ-derived sulfur replenishment. The DSR route yields short-wave infrared PbS QDs tunable from 1200 to 2200 nm, with narrow size distributions, high reproducibility, and reduced synthetic burden. Photodetectors show 64.7% external quantum efficiency and 5.8 × 1012 Jones detectivity, and 640 × 512 CMOS-integrated imaging chips exhibit a 0.04% bad-pixel rate and 3.78% photoresponse nonuniformity, validating DSR as a strategy for high-quality QD synthesis.

The accelerating deployment of perovskite solar cells (PSCs) has intensified scrutiny of their lead content and associated environmental risks. We combined dynamic material flow analysis with freshwater ecotoxicity modeling to project lifecycle lead stocks, flows, and leakage for PSCs in China from 2026 to 2060, benchmarked against crystalline silicon (c-Si) photovoltaics including a prospective lead-free soldering pathway. Under business-as-usual conditions, the cumulative lead input into the PSC life cycle reaches 29.2 ± 3.1 kt, 58.9% of which is lost, mainly in manufacturing. However, PSCs reduce cumulative lead leakage by up to 94% relative to the lead-solder c-Si baseline at equivalent installed capacity under the best practice scenario. All PSC mitigation scenarios, including cleaner production, extended service lifetimes, and enhanced recycling, also outperform the c-Si lead-free trajectory by 2060. These domestic environmental gains are complicated by international trade, which spatially redistributes environmental burdens. Developed economies outsource manufacturing impacts while tropical developing countries incur domestic leakages up to 3-fold higher than upstream leakage, driven by accelerated degradation and limited recycling infrastructure. These findings demonstrate that lead does not constitute a prohibitive barrier to PSC commercialization, if governance evolves from material restrictions toward transnational extended producer responsibility systems.

Copper(I) iodide (CuI) clusters are promising x‐ray scintillators due to their eco‐friendliness, low cost, and easy processability. However, solution‐processed films suffer from poor uniformity and significant light scattering due to solvent evaporation, limiting spatial resolution and monolithic integration. Herein, we developed monolithically integrated cluster scintillator films via vacuum co‐evaporation. We designed a CuI cluster scintillator, ([ para Cz‐Py] ₄ Cu ₂ I ₂ ), fabricated via co‐evaporation. By strategically modulating the carbazole substituent sites (para, meta, and bimeta), the para‐substituted configuration ([ para Cz‐Py] ₄ Cu ₂ I ₂ ) significantly optimizes optical properties compared to its analogues. Specifically, the [ para Cz‐Py] ₄ Cu ₂ I ₂ cluster achieves a minimized singlet‐triplet energy gap () of 0.033 eV and a high photoluminescence quantum yield (PLQY) of 98%. Consequently, the [ para Cz‐Py] ₄ Cu ₂ I ₂ cluster scintillator delivers a light yield of 14 000 photons·MeV ⁻¹ and a decay time of 14.5 ns. Furthermore, benefiting from the superior homogeneity and dense morphology provided by the thermal evaporation process, the films exhibit superior x‐ray imaging capabilities with a high spatial resolution of 17.5 lp·mm ⁻¹ , which is significantly higher than that of typical solution‐processed cluster films. This work provides insights into developing next‐generation, environmentally friendly, and high‐resolution cluster scintillators through ligand‐modulated engineering.

Halide perovskites are promising semiconductors for optoelectronic and radiation‐detection applications, yet their operational stability is often constrained by dynamically uncontrolled electrode/perovskite interfaces under electrical bias. Here, we report a self‐passivating perovskite–electrode interface enabled by field‐induced phase transformation. Unlike conventional molecular passivation or buffer‐layer engineering, this strategy exploits chemical potential differences among the metal electrode, halide species, and ambient environment to redirect bias‐driven interfacial reactions into adaptive stabilization. Using Bi/FAPbBr ₃ as a model system, we show electrical bias drives a controllable in situ electrochemical transformation that converts the contact into dense, and self‐limiting BiOBr interlayer while preserving the perovskite bulk. This metal oxyhalide layer provides robust interfacial bonding, favorable energy‐level alignment, and ultradense nanometer‐scale barrier against further ionic accumulation and degradation. As a stringent demonstration under kilovolt‐level bias, γ‐ray detectors based on this adaptive junction tolerate up to 1000 V and achieve an energy resolution of 3.6 keV at 122 keV, among the best values reported for perovskite γ‐ray detectors. This work establishes field‐induced interfacial phase transformation as a general strategy for stabilizing perovskite contacts under realistic operating conditions.