Otwin Breitenstein
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Otwin Breitenstein has a total of 61 co-authors. Here are the top co-authors by number of shared publications:
Wilhelm Warta
Fraunhofer Institute for Solar Energy Systems
8 shared publications- Wilhelm Warta
Fraunhofer-Institut für Solare Energiesysteme (ISE)
8 shared publications Martin C. Schubert
Fraunhofer Institute for Solar Energy Systems
7 shared publications- Martin Langenkamp
Sandhof 6b, 24768 Rendsburg, Germany
7 shared publications Jan Bauer
Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany
5 shared publicationsJ. Bauer
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
4 shared publications
Latest Publications
- Open Access
- 22 February 2019
- Published by Taylor & Francis in Quantitative InfraRed Thermography Journal
- Vol. 16 (3-4) , 203-217
Lock-in thermography for analyzing solar cells and failure analysis in other electronic components
Lock-in thermography (LIT) is a dynamic variant of infrared thermography, where local heat sources are periodically pulsed and amplitude and phase images of the surface temperature modulation are obtained. If used in electronic device testing, this method enables the localization of very weak local heat sources below the surface. This contribution reviews the basics and application of LIT for local efficiency analysis of solar cells and for failure analysis in other electronic components like bare and encapsulated integrated circuits. In both application fields LIT has established as a reliable and easy-to-use standard method for failure analysis.
- 22 February 2019
- Published by Taylor & Francis in Quantitative InfraRed Thermography Journal
- Vol. 16 (3-4) , 203-217
Open AccessLock-in thermography for analyzing solar cells and failure analysis in other electronic components
Lock-in thermography (LIT) is a dynamic variant of infrared thermography, where local heat sources are periodically pulsed and amplitude and phase images of the surface temperature modulation are obtained. If used in electronic device testing, this method enables the localization of very weak local heat sources below the surface. This contribution reviews the basics and application of LIT for local efficiency analysis of solar cells and for failure analysis in other electronic components like bare and encapsulated integrated circuits. In both application fields LIT has established as a reliable and easy-to-use standard method for failure analysis.
- 17 January 2019
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 193, 157-162
Lock-in thermography based local solar cell analysis for high efficiency monocrystalline hetero junction type solar cells
- 17 January 2019
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 193, 157-162
Lock-in thermography based local solar cell analysis for high efficiency monocrystalline hetero junction type solar cells
- 1 January 2019
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 189, 133-137
Luminescence based high resolution finite element simulation of inhomogeneous solar cells
- 1 January 2019
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 189, 133-137
Luminescence based high resolution finite element simulation of inhomogeneous solar cells
- 8 August 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Photovoltaics
- Vol. 8 (6) , 1429-1435
The Role of Inhomogeneities for Understanding Current–Voltage Characteristics of Solar Cells
All solar cells show more or less inhomogeneous electronic properties. This holds in particular for multicrystalline silicon cells, where local differences of the lifetime of more than an order of magnitude exist. This contribution explains how these inhomogeneities can be imaged and quantified, and the physical origins and the efficiency degradation potential of J $_{01}$ -, J $_{02}$ -, and ohmic inhomogeneities are reviewed. It is found that J $_{02}$ and ohmic currents are always highly localized, in contrast with J $_{01}$ currents. Hence, for describing most of the area of silicon solar cells, a one-diode model is sufficient, but J $_{02}$ and ohmic currents reduce the efficiency at low illumination intensity. Moreover, the physical origins of known prebreakdown phenomena are reviewed and a new breakdown type dominating in monocrystalline silicon cells is proposed.- 8 August 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Photovoltaics
- Vol. 8 (6) , 1429-1435
The Role of Inhomogeneities for Understanding Current–Voltage Characteristics of Solar Cells
All solar cells show more or less inhomogeneous electronic properties. This holds in particular for multicrystalline silicon cells, where local differences of the lifetime of more than an order of magnitude exist. This contribution explains how these inhomogeneities can be imaged and quantified, and the physical origins and the efficiency degradation potential of J $_{01}$ -, J $_{02}$ -, and ohmic inhomogeneities are reviewed. It is found that J $_{02}$ and ohmic currents are always highly localized, in contrast with J $_{01}$ currents. Hence, for describing most of the area of silicon solar cells, a one-diode model is sufficient, but J $_{02}$ and ohmic currents reduce the efficiency at low illumination intensity. Moreover, the physical origins of known prebreakdown phenomena are reviewed and a new breakdown type dominating in monocrystalline silicon cells is proposed.- 1 June 2018
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 180, 130-137
Injection intensity-dependent recombination at various grain boundary types in multicrystalline silicon solar cells
- 1 June 2018
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 180, 130-137
Injection intensity-dependent recombination at various grain boundary types in multicrystalline silicon solar cells
- Open Access
- 1 March 2018
- Published by Walter de Gruyter GmbH
Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions
Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.
- 1 March 2018
- Published by Walter de Gruyter GmbH
Open AccessUnderstanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions
Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.
- 1 January 2018
- Published by Springer Nature
- p. 297-300
Summary and Outlook
- 1 January 2018
- Published by Springer Nature
- p. 149-178
Measurement Strategies